Abstract:The electrochemical nature of the contact firing reactions is studied by short‐circuiting the Ag fingers to the underlying Si emitter. The short‐circuit effect is gradually attenuated along the finger line away from the short‐spot owing to the ohmic drop of the electrode potential along the Si substrate. The contact quality is strongly correlated to the Ag crystallites formed on the emitter surface. The 6‐in full‐cell tests demonstrate that the segmentation of Ag fingers does not necessarily mitigate the short‐circuit effect. The "short‐circuit effect" in the fire‐through Ag metallization of crystalline Si (c‐Si) solar cells refers to the poor contact formation caused by an electrical short between the Ag gridline and underlying Si emitter during contact firing. This study employs two different Ag pastes containing PbO‐ and TeO2‐based glass frits to investigate the dependence of the short‐circuit effect on the length and pattern of the Ag finger lines. The results show that regardless of the employed glass frits, the short‐circuit effect is mitigated even near the short spot and gradually attenuated along the finger line away from the spot as the Ag finger line extends radially longer than the critical length (>35 mm). We demonstrate that this attenuation is independent of the finger line width and predominantly attributed to the ohmic drop of the electrode potential along the Si substrate. The results also show that, regardless of the glass frits, the contact quality is strongly correlated with the density of the Ag crystallites that are formed on the Si emitter surface. The 6‐in full‐cell tests indicate that the isolation of the short spots by segmenting the Ag finger lines does not necessarily result in the mitigation of the short‐circuit effect. We suggest that the reduction of Ag+ on the Si emitter surface should be the key process that must be controlled to achieve high‐quality contacts during contact firing, providing further insights into the electrochemical characteristics of contact firing reactions for the future development of Ag pastes.

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Paste Development for an Optimized Filament Stretching Effect During Parallel Dispensing on Transparent Conductive Oxide Layers for Solar Cell Metallization

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The concentration factor on the mixture of Ag paste and H3PO4 solution as a dopant paste for contact formation in silicon solar cells

Experimental Investigation of Effect of Flake Silver Powder Content on Sintering Structure and Properties of Front Silver Paste of Silicon Solar Cell

Preparation of Sub-micron Spherical Silver Powders for Solar Cell Paste

Influence of Glass Phase in Silver Paste on Metallized Contact Resistance between Rear Silver and Aluminum Electrodes of Crystalline Silicon PERC Cells

Pb-free front-contact silver pastes with SnOP2O5 glass frit for crystalline silicon solar cells

Dispensing of low-temperature silver pastes