Integrated 3D Ionic Electrets Electronic Skin (e-Skin) For Harvesting of TENG Energy Through Push-Pull 3D Ionic Electrets and Ion-ion Hopping Mechanism

Ravi Kumar Cheedarala,Jung Il Song
DOI: https://doi.org/10.21203/rs.3.rs-1070606/v1
2021-11-29
Abstract:Abstract The development of highly durable, stretchable, and steady triboelectric nanogenerators (TENGs) is highly desirable to satisfy the tight requirement of energy demand. Here, we presented a novel integrated polymeric membrane that is designed by PEDOT:PSSa-naphthalene sulfonated polyimide (PPNSP)-EMI. BF 4 Electronic skin (e-skin) for potential TENG applications. The proposed TENG e-skin is fabricated by an interconnected architecture with push-pull 3D ionic electrets that can threshold the transfer of charges through an ion-hopping mechanism for the generation of a higher output voltage (Voc) and currents (Jsc) against an electronegative PTFE film. PPNSP was synthesized from the condensation of naphthalene-tetracarboxylic dianhydride, 2, 2’-benzidine sulfonic acid, and 4,4’diaminodiphenyl ether through an addition copolymerization protocol, and PEDOT:PSSa was subsequently deposited using the dip-coating method. Porous networked PPNSP e-skin with continuous ion transport nano-channels is synthesized by introducing simple and strong molecular push-pull 3D interactions via intrinsic ions. In addition, EMI. BF 4 ionic liquid (IL) is doped inside the PPNSP skin to interexchange ions to enhance the potential window for higher output Voc and Iscs. In this article, we investigated the push-pull dynamic interactions between PPNSP-EMI.BF 4 e-skin and PTFE and tolerable output performance. The novel PPNSP- EMI.BF 4 e-skin TENG produced upto 49.1 V and 1.03 μA at 1 Hz, 74 V and 1.45 μA at 2 Hz, 122.3 V and 2.21 μA at 3 Hz and 171 V and 3.6 μA at 4 Hz, and 195 V and 4.43 μA at 5 Hz, respectively. The proposed novel TENG device was shown to be highly flexible, highly durable, commercially viable, and a prospective candidate to produce higher electrical charge outputs at various applied frequencies.
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