Abstract:The effect of impurities on the physical properties of materials with an otherwise perfectly crystalline order have intrigued scientist for decades. In this respect, the availability of 2D layered materials such as graphene and the ability to introduce structural imperfections in them through doping has opened up possibilities for studying the consequence of disorder at the atomic level. In this study, we report on investigation of low temperature electrical transport measurements of B and N co-doped graphene layers C(B,N). These systems have a unique combination of impurities including both atomistically separated B and N species, as well as hexagonal boron nitride (h-BN) units within the graphitic C lattice. Despite its graphene-like lattice structure, h-BN is a wide band-gap material (>4.5 eV) due to a breakdown in its sublattice mirror symmetry. Hence, asymmetrically co-doped C(B,N) with n B ≠n N , is a unique combination of impurity doping and alloy formation within a 2D confined geometry. Earlier, the presence of h-BN it has been shown to open up a band gap in the otherwise gap-less graphene. In this work, we present a detailed investigation of the temperature dependence of transport in asymmetrically co-doped C(B,N). We find that the temperature dependence of resistance (5K < T < 400 K) of pure graphene shows a metallic behavior, whereas the C(B,N) samples show an increasingly semiconducting behavior with increasing doping levels. The temperature dependence of these samples could be approximately classified into two regimes. Within the studied range, at higher temperatures, the doped samples showed a band-gap dominated Arrhenius-like temperature dependence. At the lowest temperatures, the temperature dependence deviates from an activated behavior, and presents evidence for a conduction mechanism that is consistent with Mott's 2D-Variable Range Hopping (2D-VRH).

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Widely tunable carrier mobility of boron nitride-embedded graphene.

Density Functional Theory Study Of Bn-Doped Graphene Superlattice: Role Of Geometrical Shape And Size

BN-embedded monolayer graphene with tunable electronic and topological properties

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Advances in tuning band gap of graphene by potential doping using DFT: a review

Tuning the Electrical Properties of Large Area Graphene Through Boron-Nitrogen Co-Doping

BN Doping in the Realm of Two-Dimensional Fullerene Network for Unparalleled Structural, Electronic, Optical, and HER Advancements: A Cutting-Edge DFT Investigation

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice

Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

BN-Embedded Graphene with a Ubiquitous Gap Opening

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Tuning the Band Gap and Magnetic Properties of BN Sheets Impregnated with Graphene Flakes

Electronic, optical, and adsorption properties of Li doped hexagonal boron nitride: A GW approach

Role of interlayer spacing on electronic, thermal and optical properties of BN-codoped bilayer graphene: Influence of the interlayer and the induced dipole-dipole interactions

Thermoelectric Properties of Graphene through BN-ring Doping: A Theoretical Investigation

Bandgap Tuning of C3N Monolayer: A First-Principles Study

First principle investigation of electronic and optical properties of graphene/h-BN bilayers using Tran-Blaha-modified Becke-Johnson potential