Effect of defects on quantum yield in blue emitting photoluminescent nitrogen doped graphene quantum dots

Poonam R. Kharangarh,Siva Umapathy,Gurmeet Singh

DOI: https://doi.org/10.1063/1.4991693

IF: 2.877

2017-10-14

Journal of Applied Physics

Abstract:This paper presents a comprehensive study of the impact of defects on quantum yield in Nitrogen doped graphene quantum dots (N-GQDs). The facile and high yielding hydrothermal method was used to process the N-GQDs by selecting two different nitrogen containing powders, that is, NH4Cl (sample-I) and (NH4)2SO4(sample-II). Initially, the synthesized samples were characterized by using High Resolution Transmission Electron Microscope (HRTEM), Powdered X-Ray Diffraction, Raman Spectroscopy, and UV-Visible spectroscopy, Fourier Transform Infrared Spectroscopy, and Photoluminescence (PL) for sample integrity. HRTEM images suggest that the majority of the both sample types were in the narrow range of 5–20 nm in diameter. The samples show blue photoluminescence and excitation dependent PL emission characteristics. As expected, by using the different excitation energy in PL, appearance of peak introduces additional energy levels between π and π* that provide alternative electron transition pathways. The most remarkable finding is that the fluorescence quantum yield is up to 28% for sample-I and is 49.8% for sample-II, which is higher than that of reported GQDs (less than 25%). This clearly suggests that the defect states related to Nitrogen, Chlorine, and Sulfur that alter the band gap of the GQDs determine the PL characteristics and the quantum yield.

physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of defects in nitrogen - doped graphene quantum dots (N - GQDs) on the quantum yield. Specifically, the author synthesized N - GQDs by using two different nitrogen - containing powders (NH_4Cl and (NH_4)_2SO_4) and studied how these defect states affect the photoluminescence (PL) characteristics and quantum yield of the material. By comparing the characteristics of different samples, the author found that nitrogen, chlorine and sulfur - related defect states can significantly change the band gap of GQDs, thereby affecting their photoluminescence characteristics and quantum yield. The experimental results show that the N - GQDs sample (sample II) prepared with (NH_4)_2SO_4 has a higher quantum yield (49.8%), which is higher than the quantum yields of most reported GQDs.

The main contributions of the paper are as follows:
1. **Revealing the relationship between defect states and quantum yield**: Through detailed experimental analysis, the author showed how the defects introduced by nitrogen, chlorine and sulfur atoms change the energy level structure of GQDs, thereby increasing the quantum yield.
2. **Providing a preparation method for N - GQDs with high quantum yield**: N - GQDs prepared by the hydrothermal method using (NH_4)_2SO_4 as a nitrogen source have a high quantum yield, providing a new material choice for future applications.
3. **Characterizing the optical properties of N - GQDs in detail**: Through multiple characterization methods (such as HRTEM, PXRD, FTIR, Raman spectroscopy, UV - Vis absorption spectroscopy and PL spectroscopy), the author comprehensively analyzed the structure and optical properties of N - GQDs, providing experimental evidence for understanding its luminescence mechanism.

In summary, this paper aims to reveal the influence of defects in nitrogen - doped graphene quantum dots on the quantum yield through systematic research and provides an effective method for preparing N - GQDs with high quantum yield.