Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds

M. A. Gharavi,R. Armiento,B. Alling,P. Eklund

DOI: https://doi.org/10.1007/s10853-017-1849-0

IF: 4.5

2017-11-30

Journal of Materials Science

Abstract:AbstractScandium nitride has recently gained interest as a prospective compound for thermoelectric applications due to its high Seebeck coefficient. However, ScN also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a search for other semiconductor materials that share the electronic structure features of ScN, but which have a lower thermal conductivity. Thus, the focus of our study is to predict the existence and stability of such materials among inherently layered equivalent ternaries that incorporate heavier atoms for enhanced phonon scattering and to calculate their thermoelectric properties. Using density functional theory calculations, the phase stability of TiMgN2, ZrMgN2 and HfMgN2 compounds has been calculated. From the computationally predicted phase diagrams for these materials, we conclude that all three compounds are stable in these stoichiometries. The stable compounds may have one of two competing crystal structures: a monoclinic structure (LiUN2 prototype) or a trigonal superstructure (NaCrS2 prototype; R3¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{3} $$\end{document}mH). The band structure for the two competing structures for each ternary is also calculated and predicts semiconducting behavior for all three compounds in the NaCrS2 crystal structure with an indirect band gap and semiconducting behavior for ZrMgN2 and HfMgN2 in the monoclinic crystal structure with a direct band gap. Seebeck coefficient and power factors are also predicted, showing that all three compounds in both the NaCrS2 and the LiUN2 structures have large Seebeck coefficients. The predicted stability of these compounds suggests that they can be synthesized by, e.g., physical vapor deposition.

materials science, multidisciplinary

What problem does this paper attempt to address?

This paper aims to solve the problem of finding new semiconductor materials with a high Seebeck coefficient but a low thermal conductivity. Specifically, the research focuses on predicting and verifying the existence and stability of some ternary compounds with a layered structure. These compounds contain heavier atoms to enhance phonon scattering and thus reduce the thermal conductivity. Through density - functional - theory calculations, the phase stabilities of TiMgN₂, ZrMgN₂ and HfMgN₂ compounds were studied, and it was concluded from the calculated phase diagrams that these three compounds are stable at their corresponding stoichiometric ratios. In addition, the electronic band structures, Seebeck coefficients and power factors of these compounds were also calculated to evaluate their performance as potential thermoelectric materials. The paper mentions that scandium nitride (ScN) has become a candidate material in thermoelectric applications due to its relatively high Seebeck coefficient, but its relatively high thermal conductivity limits the thermoelectric efficiency and figure - of - merit (zT). Therefore, researchers hope to find other semiconductor materials with similar electronic structure characteristics but lower thermal conductivity. Through this study, the authors predicted the stabilities and thermoelectric properties of TiMgN₂, ZrMgN₂ and HfMgN₂ under specific crystal structures, providing a theoretical basis for the development of new thermoelectric materials.

Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds

Theoretical study of the phase transitions and electronic structure of (Zr0.5, Mg0.5)N and (Hf0.5, Mg0.5)N

Phase stability and electronic behavior of MgS, MgSe and MgTe compounds

Band gap and stability in the ternary intermetallic compounds NiSnM (M = Ti, Zr, Hf): A first principles study

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

First-Principles Thermoelectric Study of SrMgSi and CaMgGe Zintl-Phase Compounds

First-principles Theoretical Studies of Half-Metallic Ferromagnetism in CrTe

Effect of AFM ordering on thermoelectric responses of Mg3X2(X: C, Si, Ge) monolayers : a DFT insight

Predictive study of the new double Half-Heusler compounds Hf2FeNiSb2, Nb2Co2GaSb and ScNbCo2Sb2, promising candidates for thermoelectric applications

Giant thermoelectric effect governed by unique two-dimensional electronic structure and strong anharmonicity in layered nitrides

Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

Elaborating the Crystal Structures of Mgagsb Thermoelectric Compound: Polymorphs and Atomic Disorders

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Effect of AFM ordering on ThermoelectricResponses of Mg3X2 (X : C, Si, Ge) monolayers : ADFT Insight

Structural stability, electronic, mechanical, and thermodynamic properties of the new MAX phases Mn2SiC1, Mn3SiC2 and Mn4SiC3: ab-initio calculations

Stability and thermoelectric performance of the two-dimensional rare-earth compounds ( )

Structural stability, electronic and optical properties of Zr-Al-N ternary nitrides using the first-principles explorations

Theoretical studies on phase stability, electronic, optical, mechanical and thermal properties of chalcopyrite semiconductors HgXN 2 (X=Si, Ge and Sn): A comprehensive DFT analysis

Analysis of the electronic nature and transport properties of Co2CrGe, Co2FeGe, and Co2NiGa by computational electronic structure calculations

Electronic Structure and Phase Stability of Mgte, Znte, Cdte, and Their Alloys in the B3, B4, and B8 Structures

Optical and thermoelectric properties of new Janus ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers: a first-principles study