Selenium-integrated multi-resonance induced TADF emitters boost EQE of electroluminescence to 40.5% with ultra-low efficiency roll-off

Yu Xuan Hu,Jingsheng Miao,Tao Hua,Zhongyan Huang,Yanyu Qi,Yang Zou,Yuntao Qiu,Han Xia,He Liu,Xiaosong Cao,Chuluo Yang
DOI: https://doi.org/10.21203/rs.3.rs-1145606/v1
2022-02-09
Abstract:Abstract Multi-resonance induced thermally activated delayed fluorescent (MR-TADF) materials have shown great potential in high-efficiency and narrowband organic light-emitting diodes (OLEDs). However, obvious efficiency roll-off attributed to slow reverse intersystem crossing (RISC) process hinders MR-TADF materials from practical applications. Here, we report a heavy-atom incorporating emitter, namely BNSeSe, based on selenium-integrated boron-nitrogen skeleton, showing 100% photoluminescence quantum yield and the highest rate of RISC (k RISC ) of 2.0 × 10 6 s -1 among MR-TADF molecules. The corresponding OLEDs exhibit excellent external quantum efficiency (EQE) up to 36.8% and ultra-low roll-off character at high brightness (with very small roll-off values of 2.8% and 14.9% at 1000 cd m -2 and 10000 cd m -2 , respectively). Furthermore, the outstanding capability to harvest triplet excitons also enables BNSeSe to be a superior sensitizer for hyperfluorescence (HF) device, which shows state-of-the-art performance with record high EQE of 40.5%, power efficiency (PE) beyond 200 lm W -1 and luminance close to 200000 cd m -2 .
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