Directional Crystallization from the Melt of an Organic p-Type and n-Type Semiconductor Blend

Guangfeng Liu,Jie Liu,Andrew S. Dunn,Peter Nadazdy,Peter Siffalovic,Roland Resel,Mamatimin Abbas,Guillaume Wantz,Yves Henri Geerts
DOI: https://doi.org/10.1021/acs.cgd.1c00570
2021-08-23
Abstract:Directional crystallization from the melt has been used as a tool to grow parallel crystalline stripes of p- and n-type molecular semiconductors. To start, the phase behavior of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8): tetracyanoquinodimethane (TCNQ) blends (molar ratio from 20:1 to 1:1) has been investigated by variable-temperature X-ray diffraction, differential scanning calorimetry, and polarized optical microscopy. The partial charge transfer between the C8-BTBT-C8 donor and the TCNQ acceptor as a function of temperature has been studied. Blends of 10:1 and 20:1 have been selected for directional crystallization because they show similar thermotropic and phase behavior comparable to that of pure C8-BTBT-C8. Directional crystallization results suggest that moderate cooling rates (6 and 12 °C min–1) leads to a digitated growth mode that gives rise to parallel crystalline stripes of C8-BTBT-C8 and C8-BTBT-C8-TCNQ charge-transfer complexes (C8-BTBT-C8-TCNQ CT), as confirmed by confocal Raman imaging. X-ray diffraction reveals high preferential orientation and good in-plane alignment for both C8-BTBT-C8 and C8-BTBT-C8-TCNQ CT crystallites.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.cgd.1c00570.Crystal structure information; calibration of the magnitude of the temperature gradient setup; TGA and DSC curves; variable-temperature PXRD patterns; optical microscopy images; Raman spectra; in-house sXRD patterns; synchrotron-based GIXD; and pole figures (PDF)This article has not yet been cited by other publications.
chemistry, multidisciplinary,materials science,crystallography
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