Abstract:The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in highfrequency solid-state power amplifiers (PAs) both in base stations of wireless communication and T/R modules of radar. GaN HEMT devices exhibit high power densities coupled with high breakdown voltages, and have opened up the possibilities for highly efficient PAs exploiting the principles of waveform-engineered designs. Due to the fast development and maturation of the process, GaN HEMT technology has become a major enabler for both very broadband high-PAs and very high-efficiency designs. At the same time, the accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are highly desirable to ensure high performance and first-pass success design of GaN circuits. This special issue focuses on the current state of the art of GaN HEMT device modeling consisting of physicalbased model and behavioral-based model. Broadband and energy-efficient microwave devices and circuits are included in this special issue. Papers dealing with GaN HEMT models, high efficiency power amplifier and transmitter design methodologies based on GaN HEMT device, GaN based MMIC design, related to potential practical applications, were solicited. In this special, we have accepted 9 papers after peer review, which cover the topics of GaN HEMT device modeling, GaN based circuit design as well as linearization techniques. Accurate modeling of GaN device is the basis for sucessful design, 5 papers about this topic are included in this issue such as “Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study”, “Bayesian Inference Based Small-Signal Modeling Technique for GaN HEMTs”, “Pulsed I/V and S-parameters Measurement System for Isodynamic Characterization of Power GaN HEMT Transistors”, “Thermal Analysis of Microwave GaN-HEMTs in Conventional and Flip-Chip Assemblies”, “Low complexity Output Generalized Memory Polynomial model for Digital Pre-Distortion of RF Power Amplifiers”. Furthermore, 4 papers about GaN circuits design are also accepted in this issue including “18 -31GHz GaN Wideband LNA Using a 0.1μm T -Gate HEMT Process”, “Investigation of Load Modulated Inverse Class -F Power Amplifier With Extended Conduction Angle”,” A Post -Matching Concurrent Dual -Band Doherty Power Amplifier with Enhanced Bandwidth”, “A Wideband Two-Stage Doherty Power Amplifier at high Back-off by Exploring Feasible Design Space” . The broad range of GaN HEMT modeling and circuits are explored in this special issue testifies the vibrant research activity and commercial interest on innovative GaN HEMT devices and circuits to address the consequent engineering challenges.

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Monolithically Integrated GaN Power ICs Designed Using the MIT Virtual Source GaNFET (MVSG) Compact Model for Enhancement-Mode P-Gan Gate Power HEMTs, Logic Transistors and Resistors

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

An Improved ASM-HEMT Model for Kink Effect on GaN Devices

Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model

A compact Non-Quasi-Static small-signal model for GaN HEMT

Model the AlGaN/GaN high electron mobility transistors

A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs

An improved small‐signal model for GaN HEMTs devices

Compact Modeling of Capacitance Components for GaN HEMTs

Simplified EPFL GaN HEMT Model

A large signal scaling model of high power GaN microwave device

Improved Verilog‐A Based Artificial Neural Network Modeling Applied to GaN HEMTs

Special Issue on GaN HEMT Modeling and Circuits

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Accurate Modeling for GaN HEMTs and MMICs for C Ryogenic Electronics Applications Utilizing Artificial Neural Network