Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation

Fabricio Alcalde Bessia,Martín Pérez,Miguel Sofo Haro,Iván Sidelnik,J. Jerónimo Blostein,Sergio Suárez,Pablo Pérez,Mariano Gómez Berisso,Jose Lipovetzky,Martin Perez,Ivan Sidelnik,J. Jeronimo Blostein,Sergio Suarez,Pablo Perez,Mariano Gomez Berisso
DOI: https://doi.org/10.1109/tns.2018.2874191
IF: 1.703
2018-11-01
IEEE Transactions on Nuclear Science
Abstract:In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
engineering, electrical & electronic,nuclear science & technology
What problem does this paper attempt to address?