Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Energetics and Electronic Structure of Triangular Hexagonal Boron Nitride Nanoflakes

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Missing links towards understanding equilibrium shapes of hexagonal boron nitride: algorithm, hydrogen passivation, and temperature effects

The reconstructed edges of the hexagonal BN.

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Edge Chemistry Effects on the Structural, Electronic, and Electric Response Properties of Boron Nitride Quantum Dots

Appearance of Flat Bands and Edge States in Boron-Carbon-Nitride Nanoribbons

Density Functional Theory Study Of Bn-Doped Graphene Superlattice: Role Of Geometrical Shape And Size

Edge stability of boron nitride nanoribbons and its application in designing hybrid BNC structures

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

The Effects of Fluorination and Hydrogenation on the Physical Properties of Two-Dimensional (111)-Oriented Cubic Boron Nitride Nanosheets

Half-Metallic Dirac Point in B-Edge Hydrogenated BN Nanoribbons

Influence of point defects on the electronic properties of boron nitride nanosheets

Energy Gaps and Stark Effect in Boron Nitride Nanoribbons

Two and One-dimensional Honeycomb Structure of Boron Nitride

Revealing Abnormal Phonon Polaritons Confined at the Edge of Curved Two-Dimensional Boron Nitride

Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbation

Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride

Temperature-Dependent Energy-Level Shifts of Spin Defects in Hexagonal Boron Nitride

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Spin-Resolved Visible Optical Spectra and Electronic Characteristics of Defect-Mediated Hexagonal Boron Nitride Monolayer