Abstract:The development of MoS 2 -based devices presents a significant challenge due to the poor interfacial thermal transport of metal-MoS 2 -dielectric structures, which results in severe thermal dissipation issues. This work aims to investigate the effects of various strategies, including modifying metal electrodes, adjusting the number of MoS 2 layers, and incorporating van der Waals heterostructures, on the enhancement of interface thermal conductance (ITC) of metal-MoS 2 -dielectric structures. The time-domain thermoreflectance method was applied to characterize the ITC and experimental results demonstrate that the effect of regulating metal electrodes depends on the binding energy between the metal-MoS 2 interfaces, which is a matter of controversy due to the large dispersion of published results. Furthermore, the increase in the number of MoS 2 layers does not necessarily lead to the enhancement of the ITC of metal-MoS 2 -dielectric structures, as this is a comprehensive reflection of the number of layers' influence on both thermal conductance of MoS 2 itself and the ITC between MoS 2 and the surrounding materials. The results from the heterostructures of hBN-MoS 2 and Gr-MoS 2 were then systematically compared, and the results indicate the potential of Gr-MoS 2 heterostructures in augmenting ITC. In addition, the nonequilibrium molecular dynamics simulation was effectively employed to gain deeper insights into the effect of binding energy on optimizing the ITC of metal-heterostructures-dielectric nanostructures. Finally, the effectiveness of these strategies in enhancing thermal properties was discussed through an analysis of interfacial binding energy. This finding provides a valuable direction for enhancing the thermal management of MoS 2 -based devices.

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