Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

Shingo Kaneta,Le Duc Anh,Karumuri Sriharsha,Masaaki Tanaka
DOI: https://doi.org/10.7567/1882-0786/ab25c8
IF: 2.819
2019-06-13
Applied Physics Express
Abstract:We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conductionband (CB) bottom ( Γ point) of an n-type ferromagnetic semiconductor (In 0.92 ,Fe 0.08 )As ultrathinfilms (thickness t = 8–14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in aninfra-red photon energy range ( E = 0.62–1.8 eV). The t -dependence of MCD peaks are well explainedby the optical transitions from the valence band top to the quantized levels at the CB bottom of(In,Fe)As obtained from self-consistent calculations. These findings provide new possibilities ofspin-device applications utilizing QSE in nm-scale (In,Fe)As thin films.
physics, applied
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