BiVO4 photocatalysis design and applications to oxygen production and degradation of organic compounds: a review
Trinh Duy Nguyen,Van-Huy Nguyen,Sonil Nanda,Dai-Viet N. Vo,Vinh Huu Nguyen,Thuan Van Tran,Linh Xuan Nong,Thuong Thi Nguyen,Long-Giang Bach,Bawadi Abdullah,Seong-Soo Hong,Tuyen Van Nguyen
DOI: https://doi.org/10.1007/s10311-020-01039-0
IF: 13.615
2020-06-24
Environmental Chemistry Letters
Abstract:Bismuth vanadate, BiVO<sub>4</sub>, is a visible-light response semiconductor for photocatalysis applications such as organic pollutants degradation, oxygen production and carbon dioxide reduction. However, as a single-phase photocatalyst, BiVO<sub>4</sub> efficiency is limited by the unpreferable recombination of the photoexcited electron (e<sup>−</sup>) and hole (h<sup>+</sup>). Thus, strategies have been designed to enhance the photocatalytic efficiency by promoting the separation of electrons and holes. This can be done by controling the morphology and crystallographic facets of BiVO<sub>4</sub>, and by building p–n junction photocatalytic systems with a combination of n-type semiconductors (BiVO<sub>4</sub>) and p-type semiconductors or a monoclinic–tetragonal heterostructure of BiVO<sub>4</sub>. In particular, a direct p–n junction photocatalytic system with tetragonal zircon-structured BiVO<sub>4</sub> (t-z) and monoclinic scheelite-structured BiVO<sub>4</sub> (m-s) combination has recently attracted attention. Here we review the synthesis of the monoclinic–tetragonal heterostructured BiVO<sub>4</sub> photocatalyst (m–t BiVO<sub>4</sub>) by calcination, hydrothermal, microwave-assisted hydrothermal and solvothermal methods. m–t BiVO<sub>4</sub> formation and the transmission phase between t-z and m-s are controlled by the calcining temperature, precursor pH, metal doping content, type of solvent, implementation of precursors and reaction conditions. We discuss m–t BiVO<sub>4</sub> crystal structure, optical characteristics and photocatalytic principles. Successful formation of BiVO<sub>4</sub> crystals with a m-s/t-z heterostructure is based on data from X-ray diffraction (XRD), Raman and ultraviolet–visible diffuse reflectance spectroscopy (UV–Vis DRS). In the m–t BiVO<sub>4</sub> heterostructure, a direct p–n junction photocatalytic system is established. When this system is exposed to visible light, the electrons in the conduction band of m-s BiVO<sub>4</sub>, a n-type semiconductor, migrate easily to the conduction band of t-z BiVO<sub>4</sub>, while the holes on valence band of t-z BiVO<sub>4</sub>, a p-type semiconductor, move to the valence band of m-s BiVO<sub>4</sub> through an internal electric field. As a result, the e<sup>−</sup>/h<sup>+</sup> charge carriers are spatially separated.
environmental sciences,engineering, environmental,chemistry, multidisciplinary