Abstract:The principal aim of this study is to reduce considerably, via Sn doping, the resistivity of ZnO thin films prepared by simple, flexible, and cost-effective nitrogen pneumatic spray pyrolysis (NPSP) method on glass substrates at a temperature of 400°C. Different Sn content was tested (Sn/Zn = 0, 1, 3, 5 wt%) in an attempt to reduce the concentration of excessive oxygen atoms and create more free electrons. The microstructural, optical, morphological, and electrical properties of the films have been studied. The x-ray diffraction analysis demonstrated that tin-doped SZO films exhibited polycrystalline nature with a preferential orientation along (002) plane with the appearance of a new orientation (101) with the increase of Sn concentration leading then to bidirectional growth. The deposited SZO films showed an average optical transmittance of about 80% in the UV-visible region (200-800 nm) with optical band gap values at around 3.27 eV. Photoluminescence emissions of SZO samples presented three main peaks: near band edge emission, violet emission, and the blue-green emission. The surface morphology of the films obtained by scanning electron microscope (SEM) exhibited the change in morphology with increasing the Sn content. A minimum electrical resistivity value of about 17·10-3 Ω·cm was obtained for 3% SZO films. SZO films prepared by the NPSP method can be used as transparent window layer and electrodes in solar cells. RESEARCH HIGHLIGHTS: Highly oriented, conducting, and transparent Sn-doped ZnO films are successfully synthesized. The film growth orientation changed from mono-directional (002) axis to bi-directional (002) and (101) axis according to Sn doping. Ultraviolet and green emissions are noted by photoluminescence investigation. A minimum resistivity is observed for 3 wt% SZO film. The dual positive effect of the carrier gas used (N2) and Sn doping is confirmed.

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