Abstract:Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to improve the performance of electronic devices. However, the conventional approaches of measuring carrier mobility and thermal conductivity require separate and independent measurement techniques. These techniques often involve invasive probing, such as depositing thin metal films on the sample as Ohmic contacts for characterizing electrical transport or as optical transducers for characterizing thermal transport, which becomes more cumbersome as the geometry of the semiconductor devices becomes small and complicated. Here we demonstrate a non-contact frequency-domain pump-probe method that requires no sample pretreatment to simultaneously probe carrier and phonon transport. We find that the optical reflectance depends on both excess carriers and phonons in response to exposure to a modulated continuous-wave pump laser source. By modeling the ambipolar diffusion of photo-induced excess carriers, energy transfer between electrons and phonons, and phonon diffusion, we are able to extract temperature-dependent electrical and thermal transport coefficients in Si, Ge, SiGe and GaAs. The intrinsically weak perturbation from the continuous-wave pump laser avoids invoking the highly nonequilibrium transport regime that may arise when using a pulsed laser and allows for accurate assessment of electrical transport in actual devices. Our approach provides a convenient and accurate platform for the study of the charge transport and energy dissipation in semiconductors.

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop

Comment on "Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop" [Phys. Rev. Lett. 110, 177406 (2013)]

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

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Variable temperature thermal droop characteristics of 255 nm UV LED

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Prediction and Measurement of Thermal Transport Across Interfaces Between Semiconductor and Adjacent Layers

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier

Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Investigation on Mechanisms of Current Saturation in Gateless AlGaN/GaN Heterostructure Device

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages