Abstract:By using a magnetostrictive/ferroelectric laminated structure, magnetic field‐induced biaxial strain could be efficiently transferred to piezotronic devices. The charge carrier transport and corresponding drain current of the piezotronic devices can be directly modulated by either the applied magnetic field or external strain. The device exhibits high sensitivity with on/off ratio of 1700% and a gauge factor as high as 2.3 × 104. Piezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.

Magnetically Controllable Piezotronic Responses in a Composite Semiconductor Fiber with Multiferroic Coupling Effects

Dynamic Manipulation of Piezotronic Behaviors of Composite Multiferroic Semiconductors Through Time-Dependent Magnetic Field

Electrical Response of a Multiferroic Composite Semiconductor Fiber under a Local Magnetic Field

Effects of Magnetic Fields on PN Junctions in Piezomagnetic–Piezoelectric Semiconductor Composite Fibers

Piezotronic Effects In The Extension Of A Composite Fiber Of Piezoelectric Dielectrics And Nonpiezoelectric Semiconductors

Multiferroic Magnetoelectric Composite Nanostructures

Magnetoelectric Coupling Response Analasis of Piezomagneto-Piezoelectric Semiconductor Composite Simply Supported Beam under Constant Magnetic Field

Shear horizontal waves in a multiferroic composite semiconductor structure

Electric-field Control of Electromagnon Propagation and Spin-Wave Injection in a Spiral Multiferroic/ferromagnet Composite

Field/stress Tunable Behaviour of Composites Containing the Combined Current-Modulation Annealed Ferromagnetic Microwires

Magnetoelectric Coupling of Multiferroic Composites under Combined Magnetic and Mechanical Loadings

Enhancing Magnetoelectric Effect in Multiferroic Composite Bilayers Via Flexoelectricity

Piezopotential in a Bended Composite Fiber Made of a Semiconductive Core and of Two Piezoelectric Layers with Opposite Polarities

Invited: Analysis of Magnetoelectric Effect in Mulitferroic Nano-Laminate with Flexoelectricity

Bending Analysis of Multiferroic Semiconductor Composite Beam Towards Smart Cement-Based Materials.

Magnetoelectric effects in a heterostructure of magnetostrictive fiber composite and piezopolymer film

The Magnetoelectric Effects In Multiferroic Composite Nanofibers

Magneto‐electric‐optical Coupling in Multiferroic BiFeO3‐based Films

Nonlinear magnetoelectric effects in a composite piezomagnetic–piezoelectric semiconductor structure

Nanoscale Domain Structure Evolution and Magnetoelectric Coupling for PMN-33PT/Terfenol-D Multiferroic Composite

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor