IEEE Transactions on Semiconductor Manufacturing information for authors

DOI: https://doi.org/10.1109/tsm.2020.2970803

IF: 2.7

2020-02-01

IEEE Transactions on Semiconductor Manufacturing

Abstract:These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.

engineering, manufacturing, electrical & electronic,physics, condensed matter, applied

What problem does this paper attempt to address?

IEEE Transactions on Semiconductor Manufacturing publication information

DOI: https://doi.org/10.1109/tsm.2019.2951862

IF: 2.7

2020-02-01

IEEE Transactions on Semiconductor Manufacturing

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

engineering, manufacturing, electrical & electronic,physics, condensed matter, applied
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems publication information

DOI: https://doi.org/10.1109/tcad.2019.2959957

2020-01-01

Abstract:Provides a listing of current staff, committee members and society officers.

engineering, electrical & electronic,computer science, interdisciplinary applications, hardware & architecture
(12PT. FOUR ROWS BLANKED) GUIDE FOR AUTHORS FOR PROCEEDING OF INTERNATIONAL SYMPOSIUM ON GEOENVIRONMENTAL ENGINEERING

Xiao-Wu. TANG,Bing ZHU,Zhen-Ze. LI,Xue LUO

2009-01-01

Abstract:This document contains a detailed guideline for the format of the manuscripts of the Proceeding of International Symposium on Geoenvironmen tal Engineering (ISGE2009). Author(s) shall follow the layout; the font styles and sizes of this template upon acceptance of the manuscript. A concise abstract is required (maximum length 200 words). The abstract should state briefly the purpose of the research, the essential new information, the principal results and major conclusions. The abstract must be able to stand-alone and references to the manuscript should therefore be avoided. The font used in the abstract is Times New Roman, 10pt. Row space should be 1.1 times.
2018 Index IEEE Transactions on Software Engineering Vol. 44

A Abdin,J Al Dallal,M Allamanis,ELG Alves,G Antoniol,S Apel,A Armaly,J Axelsson,D Badampudi,D Bae,G Bai,C Ballabriga,A Banerjee,L Bao,EA Barbosa,ET Barr,BV Batlajery,G Bavota,A Begel,AB Bener,KE Bennin,M Berekmeri,C Bernardeschi,A Betts,C Bezemer,FA Bianchi,S Bick,C Bird,E Bodden,P Borba,H Botha,D Bowes,H Cai,R Calinescu,L Carvalho,S Cha,M Chechik,H Chen,Y Chen,F Chicano,M Choetkiertikul,D Chollak,LK Chong,N Chong,A Cicchetti,I Crnkovic,HK Dam,K Damevski,A De Lucia,G De Rosa,P Deligiannis,R DeLine,P Devanbu,D Di Nucci,A Domenici,AF Donaldson,J Dong,JS Dong,M Dumas,M Dwyer,M Fan,F Feng,X Feng,B Ferreira,B Fonseca

IF: 7.4

2019-01-01

IEEE Transactions on Software Engineering

Abstract:This index covers all technical items—papers, correspondence, reviews, etc.—that appeared in this periodical during 2018, and items from previous years that were commented upon or corrected in 2018. Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author’s name. The primary entry includes the coauthors’ names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. The Subject Index contains entries describing the item under all appropriate subject headings, plus the first author’s name, the publication abbreviation, month, and year, and inclusive pages. Note that the item title is found only under the primary entry in the Author Index.
IEEE Transactions on Device and MaterialsReliability publication information

DOI: https://doi.org/10.1109/tdmr.2020.2976677

IF: 1.886

2020-03-01

IEEE Transactions on Device and Materials Reliability

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

engineering, electrical & electronic,physics, applied
IEEE Transactions on Computing

DOI: https://doi.org/10.1109/mc.2019.2959903

2020-01-01

Computer

Abstract:Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

computer science, software engineering, hardware & architecture
ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Hussam Amrouch,Di Gao,Xiaobo Sharon Hu,Arman Kazemi,Ann Franchesca Laguna,Kai Ni,Michael T. Niemier,Mohammad Mehdi Sharifi,Simon Thomann,Xunzhao Yin,Cheng Zhuo

DOI: https://doi.org/10.1109/ICCAD51958.2021.9643578

2021-01-01

Abstract:The rapidly increasing volume and complexity of data is demanding the relentless scaling of computing power. With transistor feature size approaching physical limits, the benefits that CMOS technology can provide is diminishing. For future energy efficient computing systems, researchers aim to exploit various emerging nanotechnologies to replace conventional CMOS technology. In particular, ferroelectric FETs (FeFETs) appear to be a promising candidate to continue improving energy efficiency for data-intensive applications. Advances in FeFET scalability and FeFET compatibility with CMOS have sparked growing interest in device, circuit, and system communities. While FeFET is still evolving, many researchers and developers are already cautiously optimistic about its future. This paper provides a review on FeFET's recent technology advances, challenges, and opportunities, with a particular emphasis upon device modeling and circuit design of FeFET content addressable memory, as well as their applications in machine learning.
Proceedings of the IEEE

DOI: https://doi.org/10.1109/tac.2020.2969133

IF: 6.549

2020-02-01

IEEE Transactions on Automatic Control

Abstract:Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

automation & control systems,engineering, electrical & electronic
Si- and Ge-Based Electronic Devices

Yi Zhao,Rui Zhang,Jiwu Lu,Wenfeng Zhang

DOI: https://doi.org/10.1155/2015/864972

2015-01-01

Advances in Condensed Matter Physics

Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.
IEEE Power Electronics Society Information

DOI: https://doi.org/10.1109/jestpe.2021.3063010

IF: 5.462

2021-04-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

engineering, electrical & electronic
Manuscript preparation guide for Radiological Physics and Technology

Nobuyuki Kanematsu

2024-04-23

Abstract:This guide is intended for authors who wish to publish an original paper in Radiological Physics and Technology. They should follow the submission guidelines of the journal as well as standard guidelines and conventions for scientific writing. The journal recommends a standard structure for the main text and requires an additional section for declarations. Each section has a numbered heading that announces the topic of its content. The text may consist of paragraphs for subtopics. Original content should be detailed while unoriginal content available elsewhere should be minimized and distinguished by reference citation. Quantities and equations should be presented according to academic conventions. Tables and figures should only be used to present essential information clearly and efficiently. The LaTeX source files of this guide are available online and may be used as a manuscript template. A checklist is also provided for submitting authors.

Medical Physics
Editorial On Publishing Numerical Methods and Modeling in the IEEE Journal of Photovoltaics

Angus Rockett

DOI: https://doi.org/10.1109/jphotov.2024.3435188

2024-08-25

IEEE Journal of Photovoltaics

Abstract:It may be helpful for prospective authors to be aware of the policies for the publication of manuscripts concerned with the simulation of photovoltaic devices and systems in the IEEE Journal of Photovoltaics (J-PV). This editorial is intended to clarify the policy and expectations. While the members of the Editorial Board are not listed as coauthors, their inputs into the points made are acknowledged.

energy & fuels,materials science, multidisciplinary,physics, applied
Microelectronics Journal: Preface

Shuittong Lee,ChangChun Zhu,Ningsheng Xu

DOI: https://doi.org/10.1016/S0026-2692(03)00236-2

IF: 1.992

2004-01-01

Microelectronics Journal

Abstract:null
Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design

Yogesh Singh Chauhan

DOI: https://doi.org/10.1109/ted.2023.3340462

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:I am delighted and honored to open this IEEE Transactions on Electron Devices (TED) Special Issue on Semiconductor Device Modeling for Circuit and System Design for readers and researchers across the globe. The last IEEE TED Special Issue on Compact Modeling was published half a decade ago in 2018. A lot of new innovations have happened since then, and several emerging technologies have taken central space. This has encouraged us for a dedicated special issue to engage Electron Devices Community in a serious discussion with their scholarly contributions specifically focused on solving major challenges in the broad area of semiconductor device modeling for circuit and system design.

engineering, electrical & electronic,physics, applied
New Materials for Post-Si Computing: Ge and GeSn Devices

Gupta Suyog,Gong Xiao,Zhang Rui,Yeo Yee-Chia,Takagi Shinichi,Saraswat Krishna C.

DOI: https://doi.org/10.1557/mrs.2014.163

IF: 5

2014-01-01

MRS Bulletin

Abstract:As Si-transistor technology advances beyond the 10 nm node, the device research community is increasingly looking into the possibility of replacing Si with novel, high mobility materials as the transistor channel. Among several possible candidate materials, germanium and germanium-tin alloys (GeSn) have emerged as strong contenders for the next generation of complementary metal oxide semiconductor (CMOS) transistors. This article presents a comprehensive overview of the state of the art in Ge and GeSn transistor research. We address several key material challenges involved in fabricating high-performance Ge/GeSn-based CMOS transistors, such as gate stack formation and achieving low-resistance contacts to transistor source/drain regions. Using Ge/GeSn as channel materials, we present a FinFET-based, Si-compatible CMOS solution for device dimensions expected in the 7 nm technology node, discuss the practical challenges involved in realizing this design, and highlight directions for future research.
STEERING COMMITTEE IEEE Electron Devices Society

CHRISTOFER HIEROLD,CHONG H AHN,Jurgen BRUGGER,LIONEL BUCHAILLOT,DONL DEVOE,DAVID ELATA,HIROYUKI FUJITA,SAMI FRANSSILA,REZA GHODSSI,ANDREW HOLMES,ROGER T HOWE,HONGRUI JIANG,CHANG-JIN KIM,EUNSOK KIM,SATOSHI KONISHI,LIWEI LIN,ANTONIO LUQUE,ROYA MABOUDIAN,CARLOS H MASTRANGELO,SABINA MERLO,JIANMIN MIAO,CLARK NGUYEN,GIANLUCA PIAZZA,RUDRA PRATAP,CHRISTIAN REMBE,ANTONIO J RICCO,PASQUALINA SARRO,HELMUT SEIDEL,ASHWIN SESHIA,ANDREI M SHKEL,OLAV SOLGAARD,S MARK SPEARING,Goran STEMME,OSAMU TABATA,XIAOHONG WANG,MAN WONG,J ANDREW YEH,JUNBO YOON,MINA-RAIS ZADEH,HANS ZAPPE,HAIXIA ALICE ZHANG,JOHN XJ ZHANG,YITSHAK ZOHAR

2016-01-01

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
IEEE Power Electronics Society

DOI: https://doi.org/10.1109/tpel.2017.2766521

IF: 5.967

2018-02-01

IEEE Transactions on Power Electronics

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

engineering, electrical & electronic
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits—Volume 5, No. 1

Azad Naeemi

DOI: https://doi.org/10.1109/jxcdc.2019.2920744

2019-06-01

Abstract:Welcome to the fifth volume, first semiannual issue of the Journal on Exploratory Solid-State Computational Devices and Circuits (JXCDC), a multidisciplinary, open access IEEE journal that is focused on publishing seminal research in the exploration for energy-efficient computing based on physics and materials to enable new devices, circuits, and architecture that will be of great interest to integrated circuit researchers and those working in the IT industry. The papers in the journal are selectively chosen to provide insight into the architectural, circuit, and device implications of emerging quantum nanoelectronic and nanomagnetic device technologies. The discovery of new materials, devices, and circuits for energy-efficient computational circuits will be needed to enable Moore’s law to continue for computing beyond the end of the roadmap for CMOS technologies by enabling a significant improvement in energy efficiency and cost per function.
Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

P. R. Chidambaram,Chris Bowen,Srinivasan Chakravarthi,Charles Machala,Rick Wise,P.R. Chidambaram,C. Bowen,S. Chakravarthi,C. Machala,R. Wise

DOI: https://doi.org/10.1109/ted.2006.872912

IF: 3.1

2006-05-01

IEEE Transactions on Electron Devices

Abstract:Semiconductor industry has increasingly resorted to strain as a means of realizing the required node-to-node transistor performance improvements. Straining silicon fundamentally changes the mechanical, electrical (band structure and mobility), and chemical (diffusion and activation) properties. As silicon is strained and subjected to high-temperature thermal processing, it undergoes mechanical deformations that create defects, which may significantly limit yield. Engineers have to manipulate these properties of silicon to balance the performance gains against defect generation. This paper will elucidate the current understanding and ongoing published efforts on all these critical properties in bulk strained silicon. The manifestation of these properties in CMOS transistor performance and designs that successfully harness strain is reviewed in the last section. Current manufacturable strained-silicon technologies are reviewed with particular emphasis on scalability. A detailed case study on recessed silicon germanium transistors illustrates the application of the fundamentals to optimal transistor design.

engineering, electrical & electronic,physics, applied
IEEE Internet of Things Journal

DOI: https://doi.org/10.1109/jiot.2021.3060609

IF: 10.6

2021-03-01

IEEE Internet of Things Journal

Abstract:Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

computer science, information systems,telecommunications,engineering, electrical & electronic

IEEE Transactions on Semiconductor Manufacturing information for authors

IEEE Transactions on Semiconductor Manufacturing publication information

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems publication information

(12PT. FOUR ROWS BLANKED) GUIDE FOR AUTHORS FOR PROCEEDING OF INTERNATIONAL SYMPOSIUM ON GEOENVIRONMENTAL ENGINEERING

2018 Index IEEE Transactions on Software Engineering Vol. 44

IEEE Transactions on Device and MaterialsReliability publication information

IEEE Transactions on Computing

ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Proceedings of the IEEE

Si- and Ge-Based Electronic Devices

IEEE Power Electronics Society Information

Manuscript preparation guide for Radiological Physics and Technology

Editorial On Publishing Numerical Methods and Modeling in the IEEE Journal of Photovoltaics

Microelectronics Journal: Preface

Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design

New Materials for Post-Si Computing: Ge and GeSn Devices

STEERING COMMITTEE IEEE Electron Devices Society

IEEE Power Electronics Society

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits—Volume 5, No. 1

Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

IEEE Internet of Things Journal