Predicting Urban Water Quality with Ubiquitous Data - A Data-driven Approach

Ye Liu,Yuxuan Liang,Kun Ouyang,Shuming Liu,David S. Rosenblum,Yu Zheng,David Rosenblum

DOI: https://doi.org/10.1109/tbdata.2020.2972564

2020-01-01

IEEE Transactions on Big Data

Abstract:Urban water quality is of great importance to our daily lives. Prediction of urban water quality help control water pollution and protect human health. However, predicting the urban water quality is a challenging task since the water quality varies in urban spaces non-linearly and depends on multiple factors, such as meteorology, water usage patterns, and land uses. In this article, we forecast the water quality of a station over the next few hours from a data-driven perspective, using the water quality data, and water hydraulic data reported by existing monitor stations and a variety of data sources we observed in the city, such as meteorology, pipe networks, structure of road networks, and point of interests (POIs). First, we identify the influential factors that affect the urban water quality via extensive experiments. Second, we present a multi-task multi-view learning method to fuse those multiple datasets from different domains into an unified learning model. We evaluate our method with real-world datasets, and the extensive experiments verify the advantages of our method over other baselines and demonstrate the effectiveness of our approach.

computer science, information systems, theory & methods

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that in fully - printed zinc oxide thin - film transistors (ZnO TFTs), by inserting a printed indium tin oxide (ITO) layer to optimize the semiconductor/contact scheme, thereby significantly reducing the contact resistance and improving the device performance. Specifically, the research focuses on how to improve the contact characteristics of ZnO TFTs by introducing an ITO intermediate layer between the printed silver conductor and the solution - processed zinc oxide. This improvement is mainly reflected in two aspects:

1. **Reduction of contact resistance**: By introducing the ITO intermediate layer, the contact resistance is reduced by two orders of magnitude, from 12.1 MΩ without the ITO intermediate layer to 102 kΩ with the ITO intermediate layer. This indicates that the ITO intermediate layer effectively reduces the contact barrier between the metal and the semiconductor and improves the carrier injection efficiency.

2. **Increase in saturation mobility**: Nanoparticle thin - film transistors using the Ag/ITO contact configuration show a higher saturation mobility, reaching 0.53 cm²/V·s, while the saturation mobility of devices without the ITO intermediate layer is 0.08 cm²/V·s. This indicates that the ITO intermediate layer not only reduces the contact resistance but also may further improve the electrical performance of the device by increasing the carrier concentration at the interface or reducing the band offset.

The paper verifies these improvements through experiments and explores the underlying physical mechanisms, such as carrier accumulation and reduction of band offset. These findings are of great significance for the development of high - performance fully - printed electronic devices.