Research progress on solutions to the sneak path issue in memristor crossbar arrays

Lingyun Shi,Guohao Zheng,Bobo Tian,Brahim Dkhil,Chungang Duan
DOI: https://doi.org/10.1039/d0na00100g
IF: 5.598
2020-01-01
Nanoscale Advances
Abstract:This review timely surveyed recent progress on solutions to the sneak path issue in memristor crossbar arrays.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the sneak - path currents problem that occurs in memristor cross - bar arrays. This problem causes errors when programming or reading the resistance state of memristors, affecting the operational reliability of cross - bar arrays. Specifically: - **Sneak - path currents problem**: When attempting to apply a voltage to a specific memristor cell to change its resistance state, the current will not only flow through the target path, but may also flow through other unexpected paths (i.e., sneak - paths). These sneak - path currents can cause crosstalk interference between adjacent memory cells, which may lead to misreading of the memristor resistance state and greatly affect the operation of the memristor cross - bar array. - **Influence**: Sneak - path currents not only reduce the reliability of the array, but also increase power consumption, limiting the application potential of memristor cross - bar arrays in fields such as non - volatile storage, logical operations, and neuromorphic computing. To solve this problem, the paper reviews a variety of solutions, including but not limited to 1D1M (one diode one memristor), 1T1M (one transistor one memristor), 1S1M (one selector one memristor) structures, as well as self - selective and self - rectifying memristors. These methods aim to suppress or eliminate sneak - path currents through different mechanisms and improve the performance and reliability of memristor cross - bar arrays.