Abstract:Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.

Spin–layer locking of interlayer excitons trapped in moiré potentials

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Interlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles

The interplay of field-tunable strongly correlated states in a multi-orbital moiré system

Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides

Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons

Polarization and charge-separation of moiré excitons in van der Waals heterostructures

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Spin-valley locked instabilities in moire transition metal dichalcogenides with conventional and higher-order Van Hove singularities

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Moiré-engineered light-matter interactions in MoS 2 /WSe 2 heterobilayers at room temperature

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure

Moiré trions in MoSe2/WSe2 heterobilayers

Interferences of electrostatic moiré potentials and bichromatic superlattices of electrons and excitons in transition metal dichalcogenides

Theory of tunable flux lattices in the homobilayer moiré of twisted and uniformly strained transition metal dichalcogenides

Distinct moiré trions in a twisted semiconductor homobilayer

Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice