Abstract:Abstract Multispectral photodetectors are emerging devices capable of detecting photons in multiple wavelength ranges, such as the visible (VIS) and near infrared (NIR) regions. Image data acquired with these photodetectors can be used for effective object identification and navigation owing to additional information beyond human vision, including thermal images and night vision. However, this approach inevitably brings about problems of complex structures and low integration. In addition, few broad-spectrum detectors can achieve imaging in the visible and infrared bands separately, which is highly important for scene recognition and other tasks. Here, we propose a wide-spectrum photodetector integrated with a spectral separation function based on a visible light absorber/floating gate storage layer/near-infrared (NIR) photogating layer configuration. This device exhibits a negative photoresponse under infrared irradiation through the absorption of infrared light by the Ge substrate and the photogating effect and achieves a visible positive photoresponse through the absorption of visible light by MoS2. Furthermore, based on the memory function of the device under floating gate tunneling and the bidirectional photoresponse characteristics of the device, wide-spectrum light detection and single-wavelength signal extraction are realized. Through clever changes in the gate voltage pulse, the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states: visible light response only, response to both visible and infrared light, and infrared light response only. Reconfigurable wavelength-selective imaging can be achieved using different Vpgm (programming voltage) values. The proposed reconfigurable visible–infrared wavelength-selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure. The single-chip-based spectral separation imaging solution lays a good foundation for further development of visible–infrared vision applications.

Design and simulation of bias-selectable few photon dual-colour photodetector operating in visible and near-infrared regions

Design and Simulation of a Pseudo Planar Dual-Color Photodetector Based on the PIN Photodiodes

High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

Bias‐Selectable Si Nanowires/PbS Nanocrystalline Film n–n Heterojunction for NIR/SWIR Dual‐Band Photodetection

Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

Dual-band polarized photodetector based on van der Waals heterojunction

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

Van der Waals two-color infrared photodetector

Narrowband Near‐Infrared Photodetector Enabled by Dual Functional Internal‐Filter‐Induced Selective Charge Collection

Dual‐Band Organic Photodetectors for Dual‐Channel Optical Communications

Visible–near-infrared wavelength-selective imaging devices based on floating-gate phototransistors

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

Low-voltage-modulated perovskite/organic dual-band photodetectors for visible and near-infrared imaging

Monolithic Perovskite–Silicon Dual‐Band Photodetector for Efficient Spectral Light Discrimination

A Voltage-Controlled Tunable Two-Color Infrared Photodetector Using Gaas/Alas/Gaalas and Gaas/Gaalas Stacked Multiquantum Wells

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range

Two-dimensional Ta2NiSe5/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector

Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>/PdTe<sub>2</sub>/Ge multiheterostructures