Abstract:The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus SOCs that appear at junction interfaces and in the tunneling region. We also investigate the TAMR effect in ferromagnet/semiconductor/ferromagnet tunnel junctions. The conventional tunneling magnetoresistance (TMR) measures the difference between the magnetoresistance in parallel and antiparallel configurations. We show that in ferromagnet/semiconductor/ferromagnet heterostructures, because of the SOC effects, the conventional TMR becomes anisotropic—we refer to it as the anisotropic tunneling magnetoresistance (ATMR). The ATMR describes the changes in the TMR when the axis along which the parallel and antiparallel configurations are defined is rotated with respect to a crystallographic reference axis. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus SOCs produces differences between the rates of transmitted and reflected spins at the ferromagnet/semiconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Finally, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.

Theoretical Study on Anisotropic Magnetoresistance Effects of Arbitrary Directions of Current and Magnetization for Ferromagnets: Application to Transverse Anisotropic Magnetoresistance Effect

In-plane Anisotropic Magnetoresistance in Detwinned BaFe2-xNixAs2 (x=0, 0.6)

In-plane Anisotropic Magnetoresistance in Detwinned BaFe_2-xNi_xAs_2 (x = 0, 0.6)

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

A Theory for Anisotropic Magnetoresistance in Materials with Two Vector Order Parameters

Role of orbital hybridization in anisotropic magnetoresistance

Three-dimensional Mapping of the Anisotropic Magnetoresistance in Fe3O4 Single Crystal Thin Films

Molecular anisotropic magnetoresistance

Asymmetric Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films

Theoretical Study of Extrinsic Spin-current Generation in Ferromagnets Induced by Anisotropic Spin-flip Scattering

Anisotropic magnetoresistance in single cubic crystals: A theory and its verification

Anisotropic magnetoresistance: materials, models and applications

Hysteretic magnetization behaviour influenced by spin-currents in magnetic thin films with perpendicular anisotropy

Temperature dependence of intrinsic and extrinsic contributions to anisotropic magnetoresistance

Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions

Approaches to tunnel magnetoresistance effect with antiferromagnets

Anisotropic Galvanomagnetic Effects in Single Cubic Crystals: A Theory and Its Verification

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in Co_{x}Fe_{1-x} Single-Crystal Films

The effect of anisotropic field on magnon numbers, magnetization and heat capacity of antiferromagnetic materials

Fourfold Anisotropic Magnetoresistance of L10 FePt Due to Relaxation Time Anisotropy

Intrinsic orbital fourfold anisotropic magnetoresistance in Dirac materials