Influence of material and process parameters in the dry-development of positive-tone, polyaldehyde photoresist

Paul A. Kohl,Anthony Engler,Cassidy Tobin,Chi Kin Lo

DOI: https://doi.org/10.1557/jmr.2020.243

IF: 2.7

2020-09-10

Journal of Materials Research

Abstract:Abstract

materials science, multidisciplinary

What problem does this paper attempt to address?

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Chun Cao,Yi-wei Qiu,Jian-ting Liu,Da-zhao Zhu,Chen-liang Ding,Zhen-yao Yang,Cui-fang Kuang,Xu Liu

DOI: https://doi.org/10.11777/j.issn1000-3304.2021.21323

2022-01-01

Acta Polymerica Sinica

Abstract:Organic-polymer photoresist is the medium and carrier of micro manufacturing by two-color sensitive direct laser writing technology, which directly affects the accuracy and authenticity of the micro structures. In this work, polyvinylpyrrolidone (PVP) is introduced into pentaerythritol triacrylate (PETA) to control the viscosity, mechanical strength, volume shrinkage and polymerization rate of photoresist. The results show that hydrogen bond is formed between PVP and PETA, which can be used as a crosslinking site to improve the crosslinking degree of photoresist. Meanwhile, the introduction of PVP also increases the viscosity of the system, reduces the oxygen inhibition, and finally effectively improves the photo-polymerization conversion rate (30.1%) of PETA in photoresist, obtaining higher sensitivity and lower polymerization threshold (6.5 mW, 20 wt% PVP). In addition, the PVP sharply reduces the volume shrinkage of photoresist from 18% to 3%, greatly weakening the internal stress of the fabricated structure, thus improving the lithography performance of micro structures. Finally, the minimum linewidth of PVP composited photoresist can reach 48 nm, which has higher uniformity and regularity than that of photoresist without PVP. Thus, this work is of great significance for high-precision and high-quality micro manufacturing and various applications. [GRAPHICS]
Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist

Jose Lopez Ninantay,Anthony Engler,Jared Schwartz,Paul Kohl

DOI: https://doi.org/10.1149/2162-8777/ad47d0

IF: 2.2

2024-05-07

ECS Journal of Solid State Science and Technology

Abstract:The catalytic decomposition of poly(phthalaldehyde) with a photoacid generator can be used as dry-develop photoresist, where the exposed film depolymerizes into small molecules to allow the development of features via controlled vaporization. Higher temperatures enabled shorter dry-development times, but also promoted faster photoacid diffusion that compromised pattern fidelity. Trihexylamine was used as a base quencher to counteract acid diffusion in a phthalaldehyde-propanal co-polymer photoresist. The propanal co-monomer in the polymer improves the vaporization rate because it has a higher vapor pressure than phthalaldehyde. Addition of the base quencher was found to improve the contrast, pattern fidelity, and ease-of-handling of the dry-develop resist in a direct-write UV lithography tool. The dry-development of 4 μm features was achieved with no appreciable residue. For large area features, a spatially variable exposure method was used to direct the residue away from the exposed area. The gradient exposure method was used to produce 100 μm features. Plasma etching after dry-development was also used to achieve residue-free dry-developed patterns. These results show the benefits of incorporating base additives into a dry-develop depolymerizable resist system and highlight the need for addressing residue formation.

materials science, multidisciplinary,physics, applied
Recent progress in non-photolithographic patterning of polymer thin films

Mingjun Qiu,Weiwei Du,Shangyu Zhou,Pengzhe Cai,Yingwu Luo,Xiaoxue Wang,Rong Yang,Junjie Zhao

DOI: https://doi.org/10.1016/j.progpolymsci.2023.101688

IF: 31.281

2023-01-01

Progress in Polymer Science

Abstract:Patterned polymer thin films are essential components in many devices and applications owing to the multi-functionality, flexibility, lightweight and cost-efficiency. Unfortunately, conventional photolithography needs the use of developers and strippers which contain solvents and reagents that may dissolve, swell or degrade the polymer thin film substrates. Alternatively, non-photolithographic strategies provide alternative options and avoid the complicated optical systems, offering versatile routes for fabricating polymeric micro- and nanostructures. In this review, we summarize the recent progress in non-photolithographic patterning methods including soft lithography, nanoimprint lithography, direct writing, self-assembly of block copolymers, area-selective vapor phase deposition and instability induced patterning. These patterning approaches have been applied to various applications such as chromic devices, polymer light-emitting diodes, sensors, transistors, and protein and cellular engineering and many other scenarios. Finally, the subsisting challenges and future research directions of non-photolithographic patterning approaches are highlighted from the aspect of resolution, reliability and scalability.
Image Reversal Techniques with a Water-based Chemical Amplified Photoresist

Ming Chen-,YuanChang Li,XiaoYin Hong,Xiaoming Jiao,Ai Ping Cheng

2000-01-01

Abstract:A water-based chemical amplified photoresist, which is composed of Novolak resin, hexamethoxylmethyl melamine (HMMM), diphenyliodonium salt and photosensitizer was investigated. It was found that the diphenyliodonium salt can act not only as the photosensitive acid generator, but also as the dissolution inhibitor. As a photosensitive acid generator, the diphenyliodonium salt can generate acid after exposure, which catalyzes the condensation of Novolac-HMMM system in post-exposure bake step. Using the alkali-ethanol aqueous solution as the developer the photoresist can be of negative tone. As a dissolution inhibitor, the diphenyliodonium salt can prevent the unexposure film from being dissolved in the developer. Therefore, using the dilute alkali aqueous solution as developer this photoresist can be of positive tone. Image reversal can be achieved by selecting different developer and different photographic process. The negative tone image and the positive tone image were obtained by the optimized photolithographic parameters.
Process Development Of Negative Tone Dry Film Photoresist For Mems Applications

Xc Shan,Yf Jin,Hj Lu,Ck Wong

2004-01-01

Abstract:Applications of dry film photoresists in MEMS (micro-electro-mechanical systems) products are expected, since dry film photoresists have numerous advantages such as easily to be laminated and removed after processing. This paper reports on the process study of fabricating microstructures using commercially available dry film photoresists. Single layer and multi-lever laminations Were performed;, lateral resolutions of patterned trenches, and sidewall verticality were investigated. Trenches of 12 in wide were successfully patterned and sidewalls with 90 /-1 verticality were achieved. Furthermore. dry film photoresists were laminated successfully on a non-planar wafer with previously etched V-grooves for the next-step fabrication. The results demonstrated new possibilities of dry film photoresist for MEMS applications.
Angle Effect of Ultrasonic Agitation on the Development of Thick JSR THB-430N Negative UV Photoresist

F.-G. Tseng,C.-S. Yu

DOI: https://doi.org/10.1007/s00542-002-0177-7

2002-01-01

Microsystem Technologies

Abstract:A novel method by using adjusted ultrasonic agitation to improve the developing depth, developing time, surface roughness, and undercut problem of thick JSR-430N negative UV photoresist is proposed. This method has been successfully employed to fabricate ultra-thick microstructures of thickness more than 1.4 mm and aspect ratio at least of 5 by JSR THB-430N negative UV photoresist. With the improved ultrasonic developing procedure, the resist can potentially be a replacement of SU-8 resist for the application of high aspect ratio plating mold, due to its good stripping property [1]. The power and angle of ultrasonic agitation have also been studied and characterized. The development of thick JSR-430N resist under different ultrasonic agitation angles has been verified to have different effects on developing time, resist sidewall profile, and surface roughness.
Electron Beam Lithography: CO2‐Based Dual‐Tone Resists for Electron Beam Lithography (adv. Funct. Mater. 13/2021)

Xin‐Yu Lu,Hao Luo,Kai Wang,Yao‐Yao Zhang,Xiao‐Feng Zhu,Dongxue Li,Bingze Ma,Shisheng Xiong,Paul F. Nealey,Qiang Li,Guang‐Peng Wu

DOI: https://doi.org/10.1002/adfm.202170086

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:In article number 2007417, Paul F. Nealey, Qiang Li, Guang-Peng Wu, and co-workers discover that CO2-based polycarbonates produced by the copolymerization of CO2 and epoxides could be utilized as qualified positive and negative resists for electron beam lithography, as demonstrated by their features of full sustainability, outstanding sensitivity, high resolution, and the finely manufactured photonic crystal devices in both positive and negative tones.
Optimization of Control Parameters in Micro Hot Embossing

Yong He,Jian-Zhong Fu,Chen

DOI: https://doi.org/10.1007/s00542-007-0497-8

2007-01-01

Microsystem Technologies

Abstract:The key control parameters in hot embossing (such as the imprint pressure, the imprint temperature, the holding time and the demolding temperature) can significantly impact on the pattern quality. The finite element method was used to analyze the embossing, cooling and demolding step to acquire the optimized process parameters. The simulation results show that the polymer flow has a reference to the imprint pressure, the imprint temperature and the holding time. While the adhesion force between the polymer and the mold can significantly influence the replication accuracy. Because of polymer flow, non-uniform pressure distribution can be observed and this results in the pattern height difference. The hydraulic pressure system was designed to acquire uniform pressure. Thermal stress caused by the difference of the thermal expansion coefficients between the mold and the polymer can induce stress concentration at the corner. If the demolding direction is not vertical to horizon, another stress concentration will appear. Excessive stress results in defects and causes fracture at the base part of the pattern during the demolding step. To eliminate the defects, cooling to a relative high temperature was introduced to reduce the stress concentration and an auto-demolding device was used to insure no additional stress was imported at the demolding step. The following experiment showed the successful fabrication of fine patterns with the optimized parameters.
A Comparison of the Spatial Statistics of Random and Defined-Sequence Photoresist Films

William D. Hinsberg,Frances A. Houle

2024-09-17

Abstract:The resolution-line edge roughness-sensitivity tradeoff has motivated exploration of potential improvements using defined sequence polymers and polymer-bound photoacid generators and quenchers. In this study we characterize the internal structures of positive tone photoresist polymer films formed from defined sequence polymers and compare them to random copolymers of the same composition. We model their imaging to connect initial to developable film structures. We use a polymer packing algorithm to simulate films of diverse compositions and locations of photoacid generators and quenchers, using the composition of an ESCAP photoresist. We use a simple EUV exposure-deprotection algorithm to model developable image formation within them. In all cases, the spatial distribution of chemical moieties in the film for defined sequence polymers is nearly indistinguishable from random copolymers. We evaluate several exposure-deprotection scenarios, and find that a defined sequence copolymer has a distinctive developable image under certain circumstances. The use of defined sequence polymers within a photoresist layer does not automatically result in improved imaging, however they do have some characteristics different from random polymers of the same composition. Further study of these characteristics may provide a route to improved control over the nanoscale imaging process.

Soft Condensed Matter,Materials Science
Exposure Properties and Application of Acrylate-Based Dry Film Photoresists

Qin Jian,Liu Zewen,Zhong Yan,Wang Taihong

DOI: https://doi.org/10.3969/j.issn.1671-4776.2011.07.009

2011-01-01

Abstract:Exposure and development characterization of a novel photopolymer dry film photoresist(DFP)based on acrylate were investigated,and the experiment of the micro-channel fabricated on-chip with DFP was carried out.The lamination of the 50 μm-thickness photoresist film was realized on 4 inch silicon substrates to solve the lamination problem of the dry film photoresist on the silicon substrate.The exposure properties of the DFP were researched by the exposure time dependent on exposure dose control method,and its developing property was investigated with control of concentration gradient.The developing properties of DFP were investigated by the different developer concentrations to obtain the optimization results.The micro-channel was fabricated by DFP system and the micro-channel structures with the steep side wall were obtained.The experiments show that 65 mJ/cm2 and above exposure dose can make 50 μm-thickness dry film photoresist exposure fully and obtain the excellent microstructure morphology.The developer with 5% mass concentration has the fastest rate of developing.
Line Edge Roughness after Development in a Positive-Tone Chemically Amplified Resist of Post-Optical Lithography Investigated by Monte Carlo Simulation and a Dissolution Model.

Akinori Saeki,Takahiro Kozawa,Seiichi Tagawa,Heidi B. Cao,Hai Deng,Michael J. Leeson

DOI: https://doi.org/10.1088/0957-4484/19/01/015705

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Line edge roughness (LER) of patterned features in chemically amplified (CA) resists is formed in the acid generation stage and expected to be moderated by the acid diffusion and development process. It is essential to obtain information on the limit of LER in order to realize next-generation lithographies such as electron beam or extreme ultraviolet. Here, we report for the first time a process simulator based on physical and chemical reaction mechanisms. The LER of a positive-tone CA resist after development is investigated by Monte Carlo simulation and Mack's dissolution model. We found that the LER (high frequency) of less than 1.2 nm is achievable, although the process conditions and material design for achieving such a small LER are strict.
Effect of Metal Oxide Deposition on the Sensitivity and Resolution of E-Beam Photoresist

Xianguo Dong,Yu’ang Shao,Huihui Ping,Xiaojing Tong,Yue Wu,Yunfan Zhang,Mingxi Wang,Zhiyuan Zheng,Jun Zhao,Jie Wang,Zhiqian Guo,Liwei Zhuang,Yisheng Xu

DOI: https://doi.org/10.1021/acsami.4c08591

IF: 9.5

2024-10-04

ACS Applied Materials & Interfaces

Abstract:Organic-inorganic hybrid resists offer a solution to the issue of low sensitivity in organic photoresists like poly(methyl methacrylate) (PMMA). In this study, an organic-inorganic hybrid resist (PMMA-Al(2)O(3)) with high sensitivity and resolution was prepared by depositing metal oxides into PMMA using sequential infiltration synthesis (SIS). PMMA-Al(2)O(3) was prepared by precisely controlling the number of SIS cycles (<23) in various atomic layer deposition (ALD) processes to facilitate the...

materials science, multidisciplinary,nanoscience & nanotechnology
Evaluating Processing Parameter Effects on Polymer Grades and Plastic Coloring: Insights from Experimental Design and Characterization Studies

Jamal Alsadi,Ameen Alawneh,Ahmed Ali Khatatbeh,Mutaz Abdel Wahed,Mustafa Alseafan,Saleh Alomari

DOI: https://doi.org/10.3390/polym16233409

IF: 5

2024-12-05

Polymers

Abstract:Resolving material and processing issues is essential to improving formulations and attaining accurate color matching in blending. Two transparent polycarbonate resins made up the blend: PC1, which made up 33% of the mixture with a Melt Flow Index (MFI) of 25 g/min, and PC2, which made up 67% of the mixture with an MFI of 65 g/min. This study employed data mining and a well-structured experiment using Design of Experiment (DoE) software-8 to investigate the effects of various processing temperatures on identical material formulations. The primary objective was to understand the influence of the operating conditions on the viscosity of a red letdown pigment made of polycarbonate, both with additive (WA) and without additive (WOA). The study analyzed the effects of processing parameters and rheological properties using a co-rotating twin-screw extruder. Rheology, Fourier-Transform Infrared Spectroscopy (FTIR), and Scanning Electron Microscopy (SEM) were employed to compare results and evaluate their impact on minimizing color discrepancies and improving Single-Pass Color Uniformity.

polymer science
CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Xin-Yu Lu,Hao Luo,Kai Wang,Yao-Yao Zhang,Xiao-Feng Zhu,Dongxue Li,Bingze Ma,Shisheng Xiong,Paul F. Nealey,Qiang Li,Guang-Peng Wu

DOI: https://doi.org/10.1002/adfm.202007417

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil‐based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO2‐based polycarbonates (CO2‐PCs) obtained from the copolymerization of CO2 and epoxides are demonstrated as sustainable dual‐tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO2‐PCs present high sensitivities to electron beam (1.3/120 µC cm−2), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. A deep understanding of the exposure mechanism of CO2‐PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO2‐PC resists, respectively, and both devices show distinct colors derived from their well‐defined nanostructures, indicating the great practical potential of CO2‐derived electron beam resists.
Two Functions from a Single Photoresist: Tuning Microstructure Degradability from Light-Stabilized Dynamic Materials

Steven C Gauci,Katharina Ehrmann,Marvin Gernhardt,Bryan Tuten,Eva Blasco,Hendrik Frisch,Vishakya Jayalatharachchi,James P Blinco,Hannes A Houck,Christopher Barner-Kowollik

DOI: https://doi.org/10.1002/adma.202300151

Abstract:A photoresist-based on a light-stabilized dynamic material driven by an out-of-equilibrium photo-Diels-Alder reaction of triazolinediones with naphthalenes-whose ability to intrinsically degrade postprinting can be tuned by a simple adjustment of laser intensity during 3D laser lithography is introduced. The resist's ability to form stable networks under green light irradiation that degrade in the dark is transformed into a tunable degradable 3D printing material platform. In-depth characterization of the printed microstructures via atomic force microscopy before and during degradation reveals the high dependency of the final structures' properties on the writing parameters. Upon identifying the ideal writing parameters and their effect on the network structure, it is possible to selectively toggle between stable and fully degradable structures. This simplifies the direct laser writing manufacturing process of multifunctional materials significantly, which typically requires the use of separate resists and consecutive writing efforts to achieve degradable and nondegradable material sections.
Effects of Stress on the Adhesive Behavior of Photoresist

Geng Yu,Zhang Wei,Changlun Hou,Jian Bai

DOI: https://doi.org/10.1117/12.832073

2009-01-01

Abstract:In this paper, the effects of stress on the adhesive behavior of photoresist are described. The sources of internal stress of photoresist could be the shrinkage of photoresist during curing process and the shrinkage difference between the photoresist and the substrate. Due to high exothermicity of resin curing process, the temperature of photoresist is not uniform, which causes shrinkage difference in photoresist. Further more, when the substrate cools down, the difference of thermal expansion coefficients between the substrate and the photoresist would cause more stress. A digital phase-shifting interferometer is used to measure the curvature of substrate and then Stoney´s Formula is adopted to calculate stress. Then, a 2-D model is used to simulate temperature distribution, photoresist deformation and stress. Our results show that there is huge stress at the interface between photoresist and substrate and the stress can be reduced by anneal.
Influence of resin composition on rheology and polymerization kinetics of alumina ceramic suspensions for digital light processing (DLP) additive manufacturing

Mengting Dang,Xuezheng Yue,Guohong Zhou,Song Hu

DOI: https://doi.org/10.1016/j.ceramint.2023.03.175

IF: 5.532

2023-03-01

Ceramics International

Abstract:Alumina ceramics with optimized microstructures and mechanical properties were obtained by the attractive digital lighting processing (DLP) additive manufacturing methodology in the present study. A acrylate-based resin system was designed for the alumina powders with a mean particle size of 0.5 μm. The influence of oligomer on the viscosity and polymerization kinetics of the ceramic suspensions has been elaborately discussed by rheology, curing depth and photo-DSC characterizations. The results indicated that the introduction of oligomer has improved the cross-linking density of resins and decreased the critical dose of energy for resin polymerization, which contributed to a tougher ceramic-resin slice with higher dimensional accuracy. Densifying processes including debinding and high temperature sintering of the ceramic parts were conducted according to the TG-DTA characterizations, alumina ceramics with uniform microstructures and eliminated delamination or intralaminar cracks were finally obtained. The flexural strength was 471 MPa for the ceramics obtained from the resin composition containing 20 wt% oligomer, Weibull modulus for the ceramics were determined to be 17.31 by evaluating thirty all sides polished ceramics, indicating the highly uniform property of the ceramics fabricated by DLP additive manufacturing.

materials science, ceramics
Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Muhammad Hassaan,Umama Saleem,Akash Singh,Abrar Jawad Haque,Kaiying Wang

DOI: https://doi.org/10.3390/ma17112552

IF: 3.4

2024-05-26

Materials

Abstract:Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic–organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography—prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology—can assist with revolutionizing lithography techniques.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Fundamentals of the reaction-diffusion process in model EUV photoresists

kristopher a lavery,kwangwoo choi,bryan d vogt,vivek m prabhu,eric k lin,wenli wu,sushil k satija,michael j leeson,heidi b cao,g e thompson,hai deng,david s fryer

DOI: https://doi.org/10.1117/12.656831

2006-01-01

Abstract:More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For extreme ultraviolet (EUV) resists, control of line width roughness (LWR) and high resist sensitivity are key requirements for their success. The observed LWR and CD values result from many factors in interdependent processing steps. One of these factors is the deprotection interface formed during the post-exposure bake (PEB) step. We use model EUV photoresist polymers to systematically address the influence of exposure-dose on the spatial evolution of the deprotection reaction at a model line edge for fixed PEB time using neutron reflectivity. The bilayer consists of an acid feeder layer containing photoacid generator (PAG) and a model photoresist polymer, poly(hydroxystyrene-co-tert-butylacrylate) with perdeuterated t-butyl protecting group. The deuterium labeling allows the protection profile to be measured with nanometer resolution. The evolution of two length scales that contribute to the compositional profile is discussed.
Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Xin-Yu Lu,Rui-Sheng Zhang,Guan-Wen Yang,Qiang Li,Bo Li,Guang-Peng Wu

DOI: https://doi.org/10.1002/anie.202401850

2024-05-06

Angewandte Chemie International Edition

Abstract:Seeking high-performance photoresist is an important item for semiconductor industry due to the continuous miniaturization and intelligentization of integrated circuits. Polymer resin containing carbonate group has many desirable properties, such as high transmittance, acid sensitivity and chemical formulation, thus serving as potential photoresist material. In this work, a series of aqueous developable CO2-sourced polycarbonate (CO2-PC) were produced via alternating copolymerization of CO2 and epoxides bearing acid-cleavable cyclic acetal groups in the presence of tetranuclear organoborane catalyst. The produced CO2-PCs were investigated as chemical amplification resists in deep ultraviolet (DUV) lithography. Under the catalysis of photoacid, the acetal (ketal) groups in CO2-PC were hydrolysed into two equivalents of hydroxyl groups, which changes the exposed areas from hydrophobicity to hydrophilicity, thus enabling the exposed regions to be developed in water. Through normalized remaining thickness analysis, the optimal CO2-derived resist achieved a remarkable sensitivity of 1.9 mJ/cm2, a contrast of 7.9, a favorable resolution (750 nm, half pitch), and etching resistance (38% higher than poly(tert-butyl acrylate)). Such performances outperforming commercial KrF and ArF chemical amplification resists (i.e., polyhydroxystyrene-derived and polymethacrylate-based resists), which endows broad application prospects in the field of DUV (248 nm and 193 nm) and extreme ultraviolet (EUV) lithography and nanomanufacturing.

chemistry, multidisciplinary

Influence of material and process parameters in the dry-development of positive-tone, polyaldehyde photoresist

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist

Recent progress in non-photolithographic patterning of polymer thin films

Image Reversal Techniques with a Water-based Chemical Amplified Photoresist

Process Development Of Negative Tone Dry Film Photoresist For Mems Applications

Angle Effect of Ultrasonic Agitation on the Development of Thick JSR THB-430N Negative UV Photoresist

Electron Beam Lithography: CO2‐Based Dual‐Tone Resists for Electron Beam Lithography (adv. Funct. Mater. 13/2021)

Optimization of Control Parameters in Micro Hot Embossing

A Comparison of the Spatial Statistics of Random and Defined-Sequence Photoresist Films

Exposure Properties and Application of Acrylate-Based Dry Film Photoresists

Line Edge Roughness after Development in a Positive-Tone Chemically Amplified Resist of Post-Optical Lithography Investigated by Monte Carlo Simulation and a Dissolution Model.

Effect of Metal Oxide Deposition on the Sensitivity and Resolution of E-Beam Photoresist

Evaluating Processing Parameter Effects on Polymer Grades and Plastic Coloring: Insights from Experimental Design and Characterization Studies

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Two Functions from a Single Photoresist: Tuning Microstructure Degradability from Light-Stabilized Dynamic Materials

Effects of Stress on the Adhesive Behavior of Photoresist

Influence of resin composition on rheology and polymerization kinetics of alumina ceramic suspensions for digital light processing (DLP) additive manufacturing

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Fundamentals of the reaction-diffusion process in model EUV photoresists

Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance