Abstract:Thermophotovoltaic (TPV) converters are capable of generating electrical energy from infrared radiation emitted by an emitter powered by waste heat or solar energy. Key performance metrics for TPV converters are power output density (POD), which represents the electrical energy per unit area of the photovoltaic (PV) cell, and converter efficiency (CE), which indicates the proportion of radiative energy converted into electrical energy. A common method to significantly enhance POD is maintaining a sub-micron vacuum gap between the emitter and PV cell to leverage the near-field thermal radiation. On the other hand, bifacial TPV conversion, operating in the far-field regime, has been proposed to enhance CE by efficiently recycling the sub-bandgap energy radiation. However, bifacial TPV converters face a challenge in cooling the PV cell because the excess heat should be transferred in the lateral direction to side-edge cooling channels. Therefore, careful thermal engineering and management are required when employing near-field thermal radiation effects on bifacial TPV converters. In this study, we propose a bifacial near-field TPV (NF-TPV) converter that incorporates intrinsic Si intermediate layers, aiming to enhance both POD and CE. Si layers cover both sides of the PV cell to play a crucial role in PV cell cooling while addressing surface mode photonic loss in NF-TPV converters. We comprehensively analyze the influences of design parameters for a practical design of the bifacial NF-TPV converter. Our results demonstrate that a single-junction InAs cell can harvest 4.38 W/cm$^2$ of electrical energy with 27.2\% CE from 1000 K graphite emitters at a 100 nm vacuum gap. Despite the challenge in the cooing, our bifacial NF-TPV converter demonstrates 2.4 times larger POD with 2.7\% larger CE compared to conventional NF-TPV converters.

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