Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Jin-Wook Lee,Shaun Tan,Tae-Hee Han,Rui Wang,Lizhi Zhang,Changwon Park,Mina Yoon,Chungseok Choi,Mingjie Xu,Michael E. Liao,Sung-Joon Lee,Selbi Nuryyeva,Chenhui Zhu,Kenny Huynh,Mark S. Goorsky,Yu Huang,Xiaoqing Pan,Yang Yang
DOI: https://doi.org/10.1038/s41467-020-19237-3
IF: 16.6
2020-11-02
Nature Communications
Abstract:Abstract Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI 3 ) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI 3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI 3 showed efficiencies and stabilities superior to those of devices fabricated without NHE.
multidisciplinary sciences
What problem does this paper attempt to address?