Coevaporation of Doped Inorganic Carrier‐Selective Layers for High‐Performance Inverted Planar Perovskite Solar Cells

Jiexuan Jiang,Andraž Mavrič,Nadiia Pastukhova,Matjaz Valant,Qiugui Zeng,Zeyu Fan,Beibei Zhang,Yanbo Li
DOI: https://doi.org/10.1002/solr.202200091
IF: 9.1726
2022-03-22
Solar RRL
Abstract:Inorganic carrier‐selective layers (CSLs), whose conductivity can be effectively tuned by doping, offer low‐cost and stable alternatives for their organic counterparts in perovskite solar cells (PSCs). Herein, a dual‐source electron‐beam co‐evaporation method for the controlled deposition of copper‐doped nickel oxide (Cu:NiO) and tungsten‐doped niobium oxide (W:Nb2O5) as hole and electron transport layers, respectively, is used. The mechanisms for the improved conductivity using dopants are investigated. Owing to the improved conductivity and optimized band alignment of the doped CSLs, the all‐inorganic‐CSLs‐based PSCs achieve a maximum power conversion efficiency (PCE) of 20.47%. Furthermore, a thin titanium buffer layer is inserted between W:Nb2O5 and the silver electrode to prevent halide ingression and improve band alignment. This leads to a further improvement of PCE to 21.32% and long‐term stability (1200 h) after encapsulation. Finally, the large‐scale applicability of the doped CSLs by coevaporation is demonstrated for the device with 1 cm2 area showing a PCE of over 19%. The results demonstrate the potential application of the coevaporated CSLs with controlled doping in PSCs for commercialization. A dual‐source electron beam coevaporation method is used for the controlled deposition of copper‐doped nickel oxide and tungsten‐doped niobium oxide as hole and electron transport layers, respectively. Perovskite solar cells based on these inorganic carrier‐selective layers achieve power conversion efficiencies of 21.32% for a 0.155 cm2 device and 19.01% for a 1 cm2 device.
energy & fuels,materials science, multidisciplinary
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