Abstract:Despite the potential applications of γ-CuI thin films that imply significant temperature variations, few studies focus on the thermal stability of this material. We carried out a post deposition annealing at different temperatures under argon and air atmosphere on γ-CuI thin films to stabilize and optimize the optoelectronic and thermoelectric performances. The samples were characterized to determine the structure, the microstructure, and physical properties. Electrical measurements were carried out versus temperature every 25 °C step, with each time a return to 30 °C between the steps revealing an irreversible evolution during the first annealing treatment, with a systematic decrease of the conductivity whatever the atmosphere used. The electrical properties were stabilized after a thermal treatment at 300 °C under argon. A second annealing process under air at 150 °C allowed to optimize the electrical conductivity at 152 S m-1. The measurement of the Seebeck coefficient (S) of the stabilized film versus temperature (S = 287 μV K-1 at 44 °C and S = 711 μV K-1 at 139 °C), confirmed the p-type degenerated semiconductor behavior of the γ-CuI thin films. The EF, light hole concentration, and heavy hole concentration are calculated and attributed to the presence of OI' and Oi" defects. The total transmittance of the stabilized γ-CuI thin films is 65 %, giving a transparent conducting Haacke's Factor Of Merit FOM = 7x10-7 Ω-1. A thermoelectric Power Factor PF = 12 μW m-1 K2 is obtained close to the room temperature, and reaches 66 μW m-1 K-1 at 139 °C. In view of its interesting combined conduction, transparency and thermoelectric properties, we propose a new coefficient of performance for Transparent ThermoElectric materials (COPTTE). COPTTE = 8.3x10-12 A2 m-1 K-2 is calculated at room temperature for the stabilized γ-CuI thin film. This result is discussed with respect to the performances noted in the literature on other p-type materials.

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