In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling

Thomas Dalgaty,Niccolo Castellani,Clément Turck,Kamel-Eddine Harabi,Damien Querlioz,Elisa Vianello
DOI: https://doi.org/10.1038/s41928-020-00523-3
IF: 33.255
2021-01-18
Nature Electronics
Abstract:<p>Nature Electronics, Published online: 18 January 2021; <a href="https://www.nature.com/articles/s41928-020-00523-3">doi:10.1038/s41928-020-00523-3</a></p>The non-ideal characteristics of resistive memory devices can be used to develop low-power and resilient probabilistic neuromorphic computing hardware, suitable for highly constrained edge-based applications.
engineering, electrical & electronic
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