Monolayered Silicon Carbide for Sensing Toxic Gases: a Comprehensive Study Based on the First-principle Density Functional Theory

Shreyas S. Dindorkar,Anshul Yadav

DOI: https://doi.org/10.1007/s12633-022-01899-x

IF: 3.4

2022-04-27

Silicon

Abstract:In this study, the sensing behaviour of monolayered silicon carbide (SiC) towards toxic gases (CO, CO2, H2S, HF, NH3, NO, NO2, PH3, SO2) was examined using the density functional theory (DFT) calculations. The molecular electrostatic potential surfaces, highest occupied molecular orbitals (HOMO) - lowest unoccupied molecular orbitals (LUMO) distributions and the reactivity descriptors were evaluated. The atomic charge analysis was also carried out to analyze the charge transfer during the sensing of toxic gases. The spacing of the HOMO and LUMO were used to understand the energies associated with the frontier orbitals of the gas molecules and SiC sheet. The sensitivity of the SiC towards the toxic gas molecules was further studied in terms of electronic properties. The enthalpy of the sensing indicated the physisorption of the gas molecules on monolayered SiC except for H2S, SO2 and NO2. The atomic charge analysis indicated a charge transfer from the gas molecules to the SiC sheet, which indicated the good sensing capability of SiC. The density of state calculated from the DFT calculations revealed the change in the density of electronic states of the SiC-gas cluster. From the reactivity descriptors, it was inferred that the SiC sheet exhibited sensitivity towards gas molecules in the order SO2 > H2S > NO2 > NH3 > HF > CO2 > CO > NO > PH3.Graphical Abstract

materials science, multidisciplinary,chemistry, physical