Optimization of Performance Parameters of Doped Ferrite-Based Microwave Absorbers: Their Structural, Tunable Reflection Loss, Bandwidth, and Input Impedance Characteristics

Jasbir Singh,Charanjeet Singh,Dalveer Kaur,Sukhleen Bindra Narang,Rajshree B. Jotania,Amrin Kagdi,Rajat Joshi,Antonio Sergio Bezerra,Di Zhou,Sergei Trukhanov,Larrisa Panina,Alex Trukhanov,Antonio Sergio Bezerra Sombra
DOI: https://doi.org/10.1109/tmag.2021.3063175
IF: 1.848
2021-07-01
IEEE Transactions on Magnetics
Abstract:In this study, M-type barium strontium hexagonal ferrite was prepared with CoSn doping. The crystallographic structure of ferrite compositions was explored using X-ray diffraction (XRD). The microwave absorption characteristics were investigated on a vector network analyzer as a function of the doping of Co<sup>2+</sup> and Sn<sup>4+</sup>, frequency, and thickness of the samples. Analysis of measured XRD patterns confirmed the M-phase in the prepared samples. The electromagnetic parameters accompanied by permeability/magnetic loss, dielectric constant/loss, were increased with CoSn content. The obtained results revealed that microwave absorption was enhanced by doping with Co<sup>2+</sup> and Sn<sup>4+</sup> ions. The absorption was increased from −15.2 dB in compositions $x =0.0$ to −51.09 dB in $x =0.6$ composition; −10 dB bandwidth = 2.43 GHz was displayed in $x =1.0$ composition at 1.7 mm thickness. Both input impedance and $lambda $ /4 criterion based on thickness doping govern the mechanism of microwave absorption. $x =1.0$ composition owes a large bandwidth to thickness ratio of 3.52 at the frequency of 10.88 GHz and a percentage bandwidth of 22.33 % at a thickness of 1.7 mm. The observed absorption peaks were tuned to the desired frequency by exploiting the composition thickness and input impedance through doping with Co<sup>2+</sup> and Sn<sup>4+</sup> ions. The wide bandwidth wit- optimized absorption find applications in the field of wireless communication such as isolators, circulators, and radar application.
engineering, electrical & electronic,physics, applied
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