Abstract:Nickel (II) Oxide (NiO) is an emerging transparent semiconducting oxide with potential application in modern world ultraviolet active solar cells and visible-blind photodetectors. Despite of their critical importance, synthesis of device quality NiO thin films has remained a challenging issue. Inadequate research on growth kinetics leads to poor understanding of underlying science behind the modifications in the material properties of the grown films. Therefore, the present article reports an analysis of temperature-driven perturbations in the growth kinetics associated properties of NiO thin films grown via radio-frequency sputtering technique. The structural, morphological and optical properties of NiO films growth at various temperatures were probed and the obtained results were correlated thoroughly. It was observed that variation in growth temperature (30 – 500oC) alters the growth mechanism (Volmer-Weber to Stranski-Krastanov), surface features, stoichiometry, crystallite size, stress/strain as well as dislocation densities. The increment in Urbach energy at elevated temperatures indicated that the thermal excitation induced high adatoms mobility leading to poor crystallinity and high disorder. Interestingly, it was witnessed that NiO films growth at temperatures > 300oC exhibited stress relaxation via generation of higher defect states, lower surface roughness due to increased adatoms mobility and the suppression of first order Raman vibrational states (1PLO) associated with Ni-vacancies. Hence, we conclude that NiO films grown at 200 & 300oC possess superior material properties viz. largest crystallite size (∽ 20 nm), lower defects and high transmittance (> 90%) for device related applications.This article is protected by copyright. All rights reserved.

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