Oxygen ion transport in doped ceria: effect of vacancy trapping

Mehmet Emin Kilic,Jong-Ho Lee,Kwang-Ryeol Lee

DOI: https://doi.org/10.1039/d1ta00926e

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:The diffusion of oxygen in a ceria electrolyte is governed by the vacancy trapping effect of trivalent dopants.

materials science, multidisciplinary,chemistry, physical,energy & fuels

What problem does this paper attempt to address?

Quantitative nanoscale tracking of oxygen vacancy diffusion inside single ceria grains by in situ transmission electron microscopy

Yong Ding,YongMan Choi,Yu Chen,Ken C. Pradel,Meilin Liu,Zhong Lin Wang

DOI: https://doi.org/10.1016/j.mattod.2020.04.006

IF: 24.2

2020-09-01

Materials Today

Abstract:Oxygen vacancy formation and migration in ceria is critical to its electrochemical and catalytic properties in systems for chemical and energy transformation, but its quantification is rather challenging especially at atomic-scale because of disordered distribution. Here we report a rational approach to track oxygen vacancy diffusion in single grains of pure and Sm-doped ceria at −20 °C to 160 °C using in situ (scanning) transmission electron microscopy ((S)TEM). To create a gradient in oxygen vacancy concentration, a small region (∼30 nm in diameter) inside a ceria grain is reduced to the C-type CeO1.68 phase by the ionization or radiolysis effect of a high-energy electron beam. The evolution in oxygen vacancy concentration is then mapped through lattice expansion measurement using scanning nano-beam diffraction or 4D STEM at a spatial resolution better than 2 nm; this allows direct determination of local oxygen vacancy diffusion coefficients in a very small domain inside pure and Sm-doped ceria at different temperatures. Further, the activation energies for oxygen transport are determined to be 0.59, 0.66, 1.12, and 1.27 eV for pure CeO2, Ce0.94Sm0.06O1.97, Ce0.89Sm0.11O1.945, and Ce0.8Sm0.2O1.9, respectively, implying that activation energy increases due to impurity scattering. The results are qualitatively supported by density functional theory (DFT) calculations. In addition, our in situ TEM investigation reveals that dislocations impede oxygen vacancy diffusion by absorbing oxygen vacancies from the surrounding areas and pinning them locally. With more oxygen vacancies absorbed, dislocations show extended strain fields with local tensile zone sandwiched between the compressed ones. Therefore, dislocation density should be reduced in order to minimize the resistance to oxygen vacancy diffusion at low temperatures.

materials science, multidisciplinary
Oxygen vacancy formation in CeO2 and Ce(1-x)Zr(x)O2 solid solutions: electron localization, electrostatic potential and structural relaxation.

Hai-Feng Wang,Hui-Ying Li,Xue-Qing Gong,Yang-Long Guo,Guan-Zhong Lu,P Hu

DOI: https://doi.org/10.1039/c2cp42220d

IF: 3.3

2012-01-01

Physical Chemistry Chemical Physics

Abstract:Ceria (CeO2) and ceria-based composite materials, especially Ce1-xZrxO2 solid solutions, possess a wide range of applications in many important catalytic processes, such as three-way catalysts, owing to their excellent oxygen storage capacity (OSC) through the oxygen vacancy formation and refilling. Much of this activity has focused on the understanding of the electronic and structural properties of defective CeO2 with and without doping, and comprehending the determining factor for oxygen vacancy formation and the rule to tune the formation energy by doping has constituted a central issue in material chemistry related to ceria. However, the calculation on electronic structures and the corresponding relaxation patterns in defective CeO2-x oxides remains at present a challenge in the DFT framework. A pragmatic approach based on density functional theory with the inclusion of on-site Coulomb correction, i.e. the so-called DFT + U technique, has been extensively applied in the majority of recent theoretical investigations. Firstly, we review briefly the latest electronic structure calculations of defective CeO2(111), focusing on the phenomenon of multiple configurations of the localized 4f electrons, as well as the discussions of its formation mechanism and the catalytic role in activating the O-2 molecule. Secondly, aiming at shedding light on the doping effect on tuning the oxygen vacancy formation in ceria-based solid solutions, we summarize the recent theoretical results of Ce1-xZrxO2 solid solutions in terms of the effect of dopant concentrations and crystal phases. A general model on O vacancy formation is also discussed; it consists of electrostatic and structural relaxation terms, and the vital role of the later is emphasized. Particularly, we discuss the crucial role of the localized structural relaxation patterns in determining the superb oxygen storage capacity in kappa-phase Ce1-xZr1-xO2. Thirdly, we briefly discuss some interesting findings for the oxygen vacancy formation in pure ceria nanoparticles (NPs) uncovered by DFT calculations and compare those with the bulk or extended surfaces of ceria as well as different particle sizes, emphasizing the role of the electrostatic field in determining the O vacancy formation.
Anisotropic vacancy-mediated phonon mode softening in Sm and Gd doped ceria

Dong-Hyuk Jung,Ji-Hwan Lee,Mehmet Emin Kilic,Aloysius Soon

DOI: https://doi.org/10.1039/c8cp00559a

2018-04-18

Abstract:Ceria doped with Sm and Gd (SDC and GDC) has been suggested as a promising candidate for the electrolyte used in solid oxide fuel cells (SOFCs), since it has relatively high oxygen ion conductivity at intermediate temperature. There have been many previous experimental and computational studies to investigate the properties, structure, and effect of vacancies, etc. for SDC and GDC. However, in these previous studies, it is commonly assumed that the interaction between oxygen vacancies is negligible and many focus only on the mono-vacancy system. In addition, the possibility of anisotropic vibrational motion of the oxygen ions around vacancies is often neglected. In this paper, using both first-principle density-functional theory and classical molecular dynamics calculations, we investigate the structural and vibrational properties of the optimized SDC and GDC structures, such as bonding analysis, phonon density-of-state and mean-square-displacement of the oxygen ions. Also, we report the direction-dependent vibrations at the specific frequency of the oxygen ions near the vacancies, activation energies, and diffusion coefficients of SDC and GDC which can extend our understanding of diffusion dynamics in doped ceria-based electrolytes for SOFC applications.
Understanding the ionic conductivity maximum in doped ceria: trapping and blocking

Julius Koettgen,Steffen Grieshammer,Philipp Hein,Benjamin O H Grope,Masanobu Nakayama,Manfred Martin

DOI: https://doi.org/10.1039/c7cp08535d

2018-05-30

Abstract:Materials with high oxygen ion conductivity and low electronic conductivity are required for electrolytes in solid oxide fuel cells (SOFC) and high-temperature electrolysis (SOEC). A potential candidate for the electrolytes, which separate oxidation and reduction processes, is rare-earth doped ceria. The prediction of the ionic conductivity of the electrolytes and a better understanding of the underlying atomistic mechanisms provide an important contribution to the future of sustainable and efficient energy conversion and storage. The central aim of this paper is the detailed investigation of the relationship between defect interactions at the microscopic level and the macroscopic oxygen ion conductivity in the bulk of doped ceria. By combining ab initio density functional theory (DFT) with Kinetic Monte Carlo (KMC) simulations, the oxygen ion conductivity is predicted as a function of the doping concentration. Migration barriers are analyzed for energy contributions, which are caused by the interactions of dopants and vacancies with the migrating oxygen vacancy. We clearly distinguish between energy contributions that are either uniform for forward and backward jumps or favor one migration direction over the reverse direction. If the presence of a dopant changes the migration energy identically for forward and backward jumps, the resulting energy contribution is referred to as blocking. If the change in migration energy due to doping is different for forward and backward jumps of a specific ionic configuration, the resulting energy contributions are referred to as trapping. The influence of both effects on the ionic conductivity is analyzed: blocking determines the dopant fraction where the ionic conductivity exhibits the maximum. Trapping limits the maximum ionic conductivity value. In this way, a deeper understanding of the underlying mechanisms determining the influence of dopants on the ionic conductivity is obtained and the ionic conductivity is predicted more accurately. The detailed results and insights obtained here for doped ceria can be generalized and applied to other ion conductors that are important for SOFCs and SOECs as well as solid state batteries.
Exploration of Atomic Scale Changes during Oxygen Vacancy Dissociation Mechanism in Nanostructure Co-Doped Ceria: As Electrolytes for IT-SOFC

Shraddha Shirbhate,Ruhi Naz Nayyar,Prasanta K. Ojha,Ashok K. Yadav,Smita Acharya

DOI: https://doi.org/10.1149/2.1191908jes

IF: 3.9

2019-01-01

Journal of The Electrochemical Society

Abstract:The work provides key insight of extrinsic and intrinsic oxygen vacancies clustering, dissociation mechanism and their influence on oxy-ion conductivity in co-doped ceria system. For present attempt, we develop aliovalent co-doped ceria system Ce0.85Ca0.15/2M0.15/2O2-δ (M = Sm, Gd, Nd Dy and Sr) with optimize compositions as electrolytes for IT-SOFCs. Structure of all samples are confirmed by X-ray diffraction (XRD) and analyzed by Rietveld refinement using Full-Prof suite. Oxygen vacancies clustering are observed by X-ray absorption techniques (EXAFS & XANES) and Raman spectroscopy. Two separate Raman mode related to extrinsic and intrinsic oxygen vacancies defect spaces are detected; dissociation of oxygen vacancies from the defect clustering are realized from systematic decrease in intensity of the respective Raman mode with temperature. The EXAFS study demonstrates reduction in coordination number with enhancement in interatomic spacing, and disorder factor with increasing temperature. The results are evidenced for oxygen vacancies dissociation from cluster. XANES study reveals co-dopants in ceria causes: (i) suppression of reducing ability of Ce4+ to Ce3+ and (ii) asymmetric distribution of Ce-O in CeO8 polyhedron. Oxy-ion conductivity of co-doped ceria systems are determined by using complex impedance spectroscopy. Co-dopant induced atomic-scale restructuring and oxygen vacancies dissociations are found strongly influence on conduction mechanism.

electrochemistry,materials science, coatings & films
Electron Localization Enhances Cation Diffusion in Zirconia and Ceria: A First-Principles Study.

Yanhao Dong,Liang Qi,Ju Li,I-Wei Chen

2018-01-01

Abstract:According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and other ceramics support an interstitial mechanism. Yet all computational studies always found a much higher defect formation energy for cation interstitials than for cation vacancies, which on the other hand would rule out the interstitial mechanism. The conundrum has been resolved via first-principles calculations comparing the migrations of reduced cations and fully oxidized ones with their formal charges, in cubic ZrO2 and CeO2. Since reduction creates electrons (i.e. cation reduction) and oxygen vacancies at the same time, the latter of which are also highly mobile, we further studied the effect of oxygen vacancy on cation migration. We found in cubic ZrO2, cation reduction alone is able to lower the migration barrier, while it is not the case in CeO2; however, a large synergistic effect between cation reduction and oxygen vacancy always holds in both cubic ZrO2 and CeO2, significantly lowering cationu0027s migration barrier as well as the energy level of localized electron on the migrating cation in the saddle-point state. It signals a negative-U state in which the soft saddle-point environment enables a strong electron-phonon interaction that can over-compensate the on-site Coulomb repulsion. More broadly speaking, this electronic/ionic-defect-mediated ion migration provides a new viewpoint to understand how mass transport controlled by slowest-moving species can be tailored by minor charge carriers-including both oxygen vacancy and electron in the present case-beyond classical nonstoichiometric defect chemistry. These general findings are expected to be applicable to most transitional metal oxides, enabling more genius diffusional control for material processing and device stability.
Optimization of ionic conductivity in doped ceria using density functional theory and Kinetic Lattice Monte Carlo

S. Anwar

Abstract:Fuel cells, particularly solid oxide fuel cells (SOFC), are important for the future of greener and more efficient energy sources. Although SOFCs have been in existence for over fifty years, they have not been deployed extensively because they need to be operated at a high temperature (∼ 1000◦C), are expensive, and have slow response to changes in energy demands. One important need for commercialization of SOFCs is a lowering of their operating temperature, which requires an electrolyte that can operate at lower temperatures. Doped ceria is one such candidate. For this dissertation work I have studied different types of doped ceria to understand the mechanism of oxygen vacancy diffusion through the bulk. Doped ceria is important because they have high ionic conductivities thus making them attractive candidates for the electrolytes of solid oxide fuel cells. In particular, I have studied how the ionic conductivities are improved in these doped materials by studying the oxygen-vacancy formations and migrations. In this dissertation I describe the application of density functional theory (DFT) and Kinetic Lattice Monte Carlo (KLMC) simulations to calculate the vacancy diffusion and ionic conductivities in doped ceria. The dopants used are praseodymium (Pr), gadolinium (Gd), and neodymium (Nd), all belonging to the lanthanide series. The activation energies for vacancy migration between different nearest neighbor (relative to the dopant) positions were calculated using the commercial DFT code VASP (Vienna Ab-initio Simulation Package). These activation energies were then used as inputs to the KLMC code that I co-developed. The KLMC code was run for different temperatures (673 K to 1073 K) and for different dopant concentrations (0 to 40%). These simulations have resulted in the prediction of dopant concentrations for maximum ionic conductivity at a given temperature.

Materials Science,Engineering,Chemistry
Atomic-scale insights into electro-steric substitutional chemistry of cerium oxide

Haiwu Zhang,Ivano E. Castelli,Simone Santucci,Simone Sanna,Nini Pryds,Vincenzo Esposito

DOI: https://doi.org/10.48550/arXiv.2102.05702

2021-02-10

Materials Science

Abstract:Cerium oxide (ceria, CeO2) is one of the most promising mixed ionic and electronic conducting materials. Previous atomistic analysis has covered widely the effects of substitution on oxygen vacancy migration. However, an in-depth analysis of the role of cation substitution beyond trivalent cations has rarely been explored. Here, we investigate soluble monovalent, divalent, trivalent and tetravalent cation substituents. By combining classical simulations and quantum mechanical calculations, we provide an insight into defect association energies between substituent cations and oxygen vacancies as well as their effects on the diffusion mechanisms. Our simulations indicate that oxygen ionic diffusivity of subvalent cation-substituted systems follows the order Gd>Ca>Na. With the same charge, a larger size mismatch with Ce cation yields a lower oxygen ionic diffusivity, i.e., Na>K, Ca>Ni, Gd>Al. Based on these trends, we identify species that could tune the oxygen ionic diffusivity: we estimate that the optimum oxygen vacancy concentration for achieving fast oxygen ionic transport is 2.5% for GdxCe1-xO2-x/2, CaxCe1-xO2-x and NaxCe1-xO2-3x/2 at 800 K. Remarkably, such a concentration is not constant and shifts gradually to higher values as the temperature is increased. We find that co-substitutions can enhance the impact of the single substitutions beyond that expected by their simple addition. Furthermore, we identify preferential oxygen ion migration pathways, which illustrate the electro-steric effects of substituent cations in determining the energy barrier of oxygen ion migration. Such fundamental insights into the factors that govern the oxygen diffusion coefficient and migration energy would enable design criteria to be defined for tuning the ionic properties of the material, e.g., by co-doping.
Charge Distribution Near Oxygen Vacancies in Reduced Ceria

E. Shoko,M. F. Smith,Ross H. McKenzie

DOI: https://doi.org/10.48550/arXiv.0907.1320

2009-07-08

Materials Science

Abstract:Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce$_{7}$O$_{12}$ and Ce$_{11}$O$_{20}$. To illuminate our analysis we show alternative representations of the crystal structures in terms of orderly arrays of co-ordination defects and in terms of flourite-type modules. We found that in Ce$_{7}$O$_{12}$, the excess charge resulting from removal of an oxygen atom delocalizes among all three triclinic Ce sites closest to the O vacancy. In Ce$_{11}$O$_{20}$, the charge localizes on the next nearest neighbour Ce atoms. Our main result is that the charge prefers to distribute itself so that it is farthest away from the O vacancies. This contradicts \emph{the standard picture of charge localisation} which assumes that each of the two excess electrons localises on one of the cerium ions nearest to the vacancy. This standard picture is assumed in most calculations based on density functional theory (DFT). Based on the known crystal structure of Pr$_{6}$O$_{11}$, we also predict that the charge in Ce$_{6}$O$_{11}$ will be found in the second coordination shell of the O vacancy. Although this review focuses on bulk cerium oxides our approach to characterising electronic properties of oxygen vacancies and the physical insights gained should also be relevant to surface defects and to other rare earth and transition metal oxides.
Enhanced oxygen vacancy formation in ceria (111) and (110) surfaces doped with divalent cations

Michael Nolan

DOI: https://doi.org/10.1039/c1jm11238d

2011-01-01

Journal of Materials Chemistry

Abstract:With increasing interest in new catalytic materials based on doping of cerium dioxide with other metal cations, it is necessary to have an atomic level understanding of the factors that impact on the structural and electronic properties of doped ceria as well as its reactivity. We present in this paper simulations of the ceria (111) and (110) surfaces doped with divalent cations Pd and Ni using density functional theory (DFT) corrected for on-site Coulomb interactions (DFT + U) and hybrid DFT (using the screened exchange HSE06 functional). Structural distortions due to doping are strong in both surfaces and the most stable structure for both dopants arises through compensation of the dopant +2 valence through oxygen vacancy formation. Both dopants also lower the formation energy of the active oxygen vacancy in each surface, confirming the potential for these dopants to be used in ceria based materials for catalysis or solid oxide fuel cells, where the oxygen vacancy formation energy is important. When comparing DFT + U and hybrid DFT, although the qualitative descriptions provided by both DFT approaches are similar, we do find that the energetics of oxygen vacancy formation are quantitatively different and the importance of this point is discussed.

English Else
Insight into the Mechanism of the Ionic Conductivity for Ln-Doped Ceria (ln = La, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, and Tm) Through First-Principles Calculation.

Lifang Zhang,Junling Meng,Fen Yao,Wenwen Zhang,Xiaojuan Liu,Jian Meng,Hongjie Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.8b01853

IF: 4.6

2018-01-01

Inorganic Chemistry

Abstract:Oxygen vacancy (VO) formation energy and its migration barrier are two determining factors for the effectiveness of solid electrolytes (SEs) in solid oxide fuel cells (SOFCs). In this work, a series of aliovalent rare-earth-doped ceria (Ln xCe1- xO2-δ, Ln = lanthanides) compounds serving as SEs are comprehensively and comparatively calculated, through which the determinant factors for oxygen vacancy formations and their migration activity are figured out at an atomistic level via the first-principles calculations with the consideration of electronic correlations. Initially, it is found that the oxygen vacancy formation energies of the Ln-doped ceria are largely reduced in contrast to the undoped ceria (CeO2-δ), which obviously agree with the literature. Then, the migration activity of an oxygen vacancy in Ln xCe1- xO2-δ is closely correlated to the association energies of Ln-VO, in which the different 4f5d bonding properties for different Ln ions should be taken into account. Additionally, the analysis of charge difference gradient (CDG) is revealed to be the intrinsic driving force for oxygen vacancy migration. We hope that our investigation provides a microscopic insight into the oxygen vacancy defect physics, and it is also a benefit for the design of more advanced relevant functional materials.
A model to understand the oxygen vacancy formation in Zr-doped CeO 2: Electrostatic interaction and structural relaxation

Hai-Feng Wang,Xue-Qing Gong,Yang-Long Guo,Yun Guo,Guan Zhong Lu,Peijun Hu.

DOI: https://doi.org/10.1021/jp900942a

2009-01-01

Abstract:Using density functional theory with the inclusion of on-site Coulomb Correction, the O vacancy formation energies of CexZr1-xO2 solid solutions with a series of Ce/Zr ratios are calculated, and a model to understand the results is proposed. It consists of electrostatic and structural relaxation terms, and the latter is found to play a vital role in affecting the O vacancy formation energies. Using this model, several long-standing questions in the field, such as why ceria with 50% ZrO2 usually exhibit the best oxygen storage capacity, can be explained. Some implications of the new interpretation are also discussed.
A DFT+U study on the contribution of 4f electrons to oxygen vacancy formation and migration in Ln-doped CeO2

Musa Alaydrus,Mamoru Sakaue,Hideaki Kasai

DOI: https://doi.org/10.48550/arXiv.1603.06982

2016-01-30

Materials Science

Abstract:Rare-earth doped form, ceria (CeO2) is of interest as a potential candidate for solid oxide fuel cells (SOFCs) because of its relatively high oxygen ion conductivity at temperatures below 600 {\deg}C. At the present time, computational chemistry has reached a certain maturity which allows prediction of materials properties that are difficult to observe experimentally. However, understanding of the roles of dopants on the oxygen ion conduction in CeO2 is still incomplete for quantitatively reliable analysis due to strong electron correlation of 4f electrons. In this study, density functional theory calculations with Hubbard U corrections are conducted to discuss ionic/covalent interactions in rare-earth-doped CeO2 and their consequences to oxygen ion conduction. The study suggests that the variable occupancy of empty 4f orbitals is important typically for early Ln elements to produce the covalent interactions that essentially affect formation and migration of oxygen vacancies. This finding is important in understanding the factors responsible for oxygen ion diffusion in doped CeO2.
Ab initio thermodynamics of intrinsic oxygen vacancies in ceria

Chirranjeevi Balaji Gopal,Axel van de Walle

DOI: https://doi.org/10.48550/arXiv.1206.5429

2012-10-16

Abstract:Nonstoichiometric ceria(CeO$_{2-\delta}$) is a candidate reaction medium to facilitate two step water splitting cycles and generate hydrogen. Improving upon its thermodynamic suitability through doping requires an understanding of its vacancy thermodynamics. Using density functional theory(DFT) calculations and a cluster expansion based Monte Carlo simulations, we have studied the high temperature thermodynamics of intrinsic oxygen vacancies in ceria. The DFT+$U$ approach was used to get the ground state energies of various vacancy configurations in ceria, which were subsequently fit to a cluster expansion Hamiltonian to efficiently model the configurational dependence of energy. The effect of lattice vibrations was incorporated through a temperature dependent cluster expansion. Lattice Monte Carlo simulations using the cluster expansion Hamiltonian were able to detect the miscibility gap in the phase diagram of ceria. The inclusion of vibrational and electronic entropy effects made the agreement with experiments quantitative. The deviation from an ideal solution model was quantified by calculating as a function of nonstoichiometry, a) the solid state entropy from Monte Carlo simulations and b) Warren-Cowley short range order parameters of various pair clusters.

Materials Science,Statistical Mechanics,Strongly Correlated Electrons
Scalable Oxygen‐Ion Transport Kinetics in Metal‐Oxide Films: Impact of Thermally Induced Lattice Compaction in Acceptor Doped Ceria Films

Jennifer L. M. Rupp,Emiliana Fabbri,Dario Marrocchelli,Jeong-Woo Han,Di Chen,Enrico Traversa,Harry L. Tuller,Bilge Yildiz

DOI: https://doi.org/10.1002/adfm.201302117

IF: 19

2014-01-01

Advanced Functional Materials

Abstract:In this paper, we focus on the effect of processing‐dependent lattice strain on oxygen ion conductivity in ceria based solid electrolyte thin films. This is of importance for technological applications, such as micro‐SOFCs, microbatteries, and resistive RAM memories. The oxygen ion conductivity can be significantly modified by control of lattice strain, to an extent comparable to the effect of doping bulk ceria with cations of different diameters. The interplay of dopant radii, lattice strain, microstrain, anion‐cation near order and oxygen ion transport is analyzed experimentally and interpreted with computational results. Key findings include that films annealed at 600 °C exhibit lattice parameters close to those of their bulk counterparts. With increasing anneal temperature, however, the films exhibited substantial compaction with lattice parameters decreasing by as much as nearly 2% (viz, Δd600–1100 °C: –1.7% (Sc+3) > –1.5% (Gd+3) > –1.2% (La+3)) for the annealing temperature range of 600–1100 °C. Remarkably 2/3rd of the lattice parameter change obtained in bulk ceria upon changing the acceptor diameter from the smaller Sc to larger La, can be reproduced by post annealing a film with fixed dopant diameter. While the impact of lattice compaction on defect association/ordering cannot be entirely excluded, DFT computation revealed that the main effect appears to result in an increase in migration energy and consequent drop in ionic conductivity. As a consequence, it is clear that annealing procedures should be held to a minimum to maintain the optimum level of oxygen ion conductivity for energy‐related applications. Results reveal also the importance to understand the role of electro‐chemo‐mechanical coupling that is active in thin film materials.
Microstructural evolution and its influence on oxygen diffusion in yttrium-doped ceria thin films

Jinzhan Li,Li Lei,Limin Li,Bo Deng,Gaoyang Zhao,Lihua Jin,Chengshan Li

DOI: https://doi.org/10.1088/2053-1591/ac3952

IF: 2.025

2022-04-01

Materials Research Express

Abstract:Abstract Ceria doped with rare earth ions (Ce 1−x M x O 2−y (y = x/2)), which contain many oxygen vacancies, have become excellent electrolyte materials for solid oxide fuel cells and important buffer layers for coated conductors. In this paper, Y 3+ ions were doped into the lattice of CeO 2 to form Ce 1−x Y x O 2−y (CYO) thin films regarded as buffer layers to reduce oxygen diffusion on silicon substrates. It was revealed that the CYO films gradually transformed from a complete fluorite structure into a defective fluorite structure with more and more oxygen vacancies as the proportion of Y 3+ ions in CYO films increased from zero, and then the defective fluorite structure transformed into rare earth C-type structure when the proportion of Y 3+ ions was beyond 0.5. Moreover, at the beginning, the degree of oxygen diffusion showed an uptrend; but after the proportion of Y 3+ ions reached a certain value, the degree of oxygen diffusion turned into a downtrend.

materials science, multidisciplinary
Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

Yanhao Dong,Liang Qi,Ju Li,I-Wei Chen

DOI: https://doi.org/10.48550/arXiv.1808.05198

2018-08-15

Materials Science

Abstract:According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and barium titanate are in support of an interstitial mechanism. Yet previous computational studies always found a much higher formation energy for cation interstitials than for cation vacancies, which would rule out the interstitial mechanism. The conundrum has been resolved via first-principles calculations comparing migration of reduced cations and oxidized ones, in cubic ZrO2, CeO2 and BaTiO3. In nearly all cases, reduction alone lowers the migration barrier, and pronounced lowering results if cation's electrostatic energy at the saddle point decreases. The latter is most effectively realized when a Ti cation is allowed to migrate via an empty Ba site thus being fully screened all the way by neighboring anions. Since reduction creates oxygen vacancies as well, which are highly mobile, we also studied their effect on cation migration, and found it only marginally lowers the migration barrier. In several cases, however, a large synergistic effect between cation reduction and oxygen vacancy is revealed, causing an electron to localize in the saddle-point state at a much lower energy than normal, signaling that the saddle point is a negative-U state in which the soft environment enables a large electron-phonon interaction that can over-compensate the on-site Coulomb repulsion. These general findings are expected to be applicable to defect-mediated ion migration in most transitional metal oxides.
Charge distribution near bulk oxygen vacancies in cerium oxides

E Shoko,M F Smith,Ross H McKenzie

DOI: https://doi.org/10.1088/0953-8984/22/22/223201

2010-05-21

Abstract:Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce₇O₁₂ and Ce₁₁O₂₀. To illuminate our analysis we show alternative representations of the crystal structures in terms of orderly arrays of coordination defects and in terms of fluorite-type modules. We found that in Ce₇O₁₂, the excess charge resulting from removal of an oxygen atom delocalizes among all three triclinic Ce sites closest to the O vacancy. In Ce₁₁O₂₀, the charge localizes on the next nearest neighbour Ce atoms. Our main result is that the charge prefers to distribute itself so that it is farthest away from the O vacancies. This contradicts the standard picture of charge localization which assumes that each of the two excess electrons localizes on one of the cerium ions nearest to the vacancy. This standard picture is assumed in most calculations based on density functional theory (DFT). Based on the known crystal structure of Pr₆O₁₁, we also predict that the charge in Ce₆O₁₁ will be found in the second coordination shell of the O vacancy. We also extend the analysis to the Magnéli phases of titanium and vanadium oxides (M(n)O(₂n₋₁), where M = Ti, V) and consider the problem of metal-insulator transitions (MIT) in these oxides. We found that the bond valence analysis may provide a useful predictive tool in structures where the MIT is accompanied by significant changes in the metal-oxygen bond lengths. Although this review focuses mainly on bulk cerium oxides with some extension to the Magnéli phases of titanium and vanadium, our approach to characterizing electronic properties of oxygen vacancies and the physical insights gained should also be relevant to surface defects and to other rare earth and transition metal oxides.
The role of oxygen defects on the electro-chemo-mechanical properties of highly defective gadolinium doped ceria

Ahsanul Kabir,Jin Kyu Han,Benoit Merle,Vincenzo Esposito

DOI: https://doi.org/10.1016/j.matlet.2020.127490

IF: 3

2020-05-01

Materials Letters

Abstract:In light of the recent discovery of giant electrostriction in defective fluorites, here we investigate the interplay between mechanical, electrochemical and electromechanical properties of oxygen defective ceria compositions (Ce1−xGdxO2−δ) as the effect of Gd-doping (x = 0.05−0.3) at low temperatures. Highly dense polycrystalline ceramics are prepared as micron-size grains with a minimized grain boundary extent. Electrochemical ionic migration by impedance spectroscopy reveals that dopant content controls the oxygen vacancies association in the samples. Interestingly, we observe that electromechanical activity is strongly controlled by the local oxygen vacancy configuration rather than on its nominal concentration. The primary creep at room temperature indicates a declining viscoelastic trend with increasing oxygen defects.

materials science, multidisciplinary,physics, applied
The Structure of Oxygen Vacancies in the Near-Surface of Reduced CeO2 (111) Under Strain

Zhong-Kang Han,Lei Zhang,Meilin Liu,Maria Verónica Ganduglia-Pirovano,Yi Gao

DOI: https://doi.org/10.3389/fchem.2019.00436

2019-06-18

Abstract:Strain has been widely recognized as important for tuning the behavior of defects in metal oxides since properties such as defect configuration, electronic structure, excess charge localization, and local atomic distortions may be affected by surface strain. In CeO2, the most widely used promoter in three-way catalysts and solid state electrolyte in fuel cells, the behaviors of oxygen vacancies, and associated Ce3+ polarons are crucial in applications. Recent STM and AFM investigations as well as DFT-based calculations have indicated that in the near-surface of CeO2 (111), at low temperatures and vacancy concentrations, subsurface oxygen vacancies are more stable than surface ones, and the Ce3+ ions are next-nearest neighbors to both types of vacancies, which can be explained by the better ability of the system to relax the lattice strain induced by vacancy formation as well as by the excess charge localization. The results also revealed that the interaction between first-neighbor vacancies is repulsive. In this work, the relative stability of surface and subsurface oxygen vacancies at the CeO2 (111) surface under in-plane strain is investigated by means of DFT+U calculations. The tensile strain favors isolated surface vacancies with next nearest neighbor polarons, whereas isolated subsurface vacancies with nearest neighbor polarons are energetically favored under compressive strain. In addition, the formation of both surface and subsurface dimers is favored over having corresponding isolated species under compressive strain, which implies the possibility of controlling the formation of vacancy clusters using strain. In many applications, ceria is employed as a supported thin film or within a heterostructure in which ceria can be strained, and this study shows that strain can be a useful handle to tune properties of such materials.

Oxygen ion transport in doped ceria: effect of vacancy trapping

Quantitative nanoscale tracking of oxygen vacancy diffusion inside single ceria grains by in situ transmission electron microscopy

Oxygen vacancy formation in CeO2 and Ce(1-x)Zr(x)O2 solid solutions: electron localization, electrostatic potential and structural relaxation.

Anisotropic vacancy-mediated phonon mode softening in Sm and Gd doped ceria

Understanding the ionic conductivity maximum in doped ceria: trapping and blocking

Exploration of Atomic Scale Changes during Oxygen Vacancy Dissociation Mechanism in Nanostructure Co-Doped Ceria: As Electrolytes for IT-SOFC

Electron Localization Enhances Cation Diffusion in Zirconia and Ceria: A First-Principles Study.

Optimization of ionic conductivity in doped ceria using density functional theory and Kinetic Lattice Monte Carlo

Atomic-scale insights into electro-steric substitutional chemistry of cerium oxide

Charge Distribution Near Oxygen Vacancies in Reduced Ceria

Enhanced oxygen vacancy formation in ceria (111) and (110) surfaces doped with divalent cations

Insight into the Mechanism of the Ionic Conductivity for Ln-Doped Ceria (ln = La, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, and Tm) Through First-Principles Calculation.

A model to understand the oxygen vacancy formation in Zr-doped CeO 2: Electrostatic interaction and structural relaxation

A DFT+U study on the contribution of 4f electrons to oxygen vacancy formation and migration in Ln-doped CeO2

Ab initio thermodynamics of intrinsic oxygen vacancies in ceria

Scalable Oxygen‐Ion Transport Kinetics in Metal‐Oxide Films: Impact of Thermally Induced Lattice Compaction in Acceptor Doped Ceria Films

Microstructural evolution and its influence on oxygen diffusion in yttrium-doped ceria thin films

Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

Charge distribution near bulk oxygen vacancies in cerium oxides

The role of oxygen defects on the electro-chemo-mechanical properties of highly defective gadolinium doped ceria

The Structure of Oxygen Vacancies in the Near-Surface of Reduced CeO2 (111) Under Strain