Abstract:Today, Fs defects in MgO as isolated surface neutral oxygen vacancies are in the focus of surface science, catalysis research, and emission coating of microchannel plates. With the 10-4 atom % content at 750 K and under pO2 = 10-9 Torr, estimated by us from the known equilibrium T-x and p-T-x diagrams of MgO, Fs defects remain invisible or difficult-to-detect objects. The MgO(100) → MgO(100) + Fs + 1/2O2 phase transition was studied in MgO films deposited by the metal-organic chemical vapor deposition (MOCVD) procedure from the mixed-ligand Mg precursor on Si substrates at 725 K in the O2 flow where the nonstoichiometric phase (MgO/Fs) is formed in the gas medium containing simultaneous H2, CO, H2O, CO, and O2 species in unbalanced concentrations. Realization of the above transition was proven theoretically and experimentally through kinetic-thermodynamic analysis of the nonequilibrium system with revealing thermodynamic motive forces, i.e., the positive enthalpy and entropy, as well as through a new combination of diagnostic methods including the original differential dissolution method, due to which separate determination of the point and morphological defects was achieved. It was found that Fs defects occur when oxygen in the immediate vicinity to the substrate surface is replaced practically completely by the oxidized products of the precursor and the resulting oxygen pressure becomes enough for this process. The 90 mass % of the as-deposited MgO-film-involved (MgO/Fs) phase; its chemical activity is demonstrated through dissolution in hot water, while the electron donor activity is through 9 at 750 eV secondary electron yield. A good understanding of gas-phase reactions between the precursors and oxygen provides the fundamental basis of the MOCVD process to deposit MgO films that are dense, free from carbon, and of homogeneous texture. This makes the MOCVD process suitable also for use as coatings of microchannel plates.

Work function of MgO single crystals from ion-induced secondary electron emission coefficient

Secondary electron emission coefficient of a MgO single crystal

Electron ejection from MgO thin films by low energy noble gas ions: Energy dependence and initial instability of the secondary electron emission coefficient

Temperature-dependent Infrared Dielectric Functions of MgO Crystal: an Ellipsometry and First-Principles Molecular Dynamics Study.

Theoretical description of optical and x-ray absorption spectra of MgO including many-body effects

Anisotropic work function of elemental crystals

Effective work functions of polycrystalline refractory metals heated for thermal positive-ionic and electronic emissions

Measurement of Energy Band Structure of MgO, MgSrO and MgCaO Thin Film by their Secondary Electron Emission Coefficient due to Auger Neutralization

Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy

The measurement of secondary electron emission coefficient of MgO

A Query on the Mg 2p Binding Energy of MgO

Invisible Surface Oxygen Vacancies in a Thin MgO Film: Impacts on the Chemical Activity and Secondary Electron Emission

Characterisation of the ground X and first excited A electronic states of MgO by high-resolution photoelectron spectroscopy

Electrizaton and cathodoluminescence of single crystal MgO under 2.5 – 15 keV electron beam

Long-Wavelength Optical Phonon Properties Of Ternary Mgzno Thin Films

Low energy ion irradiation effects in MgO: Optical property study

The incident photons cut-off energy, the optical linear equations and the electron phonon interactions in ZnO thin films annealed at different temperatures

Oxygen-vacancy-ordering-induced Metal-Insulator Transition in MgO Single Crystals

Incidence Angle Effect on Oxide Charge Kinetics

Optical properties of Mg x Zn 1−x O thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

ELECTRONIC AND OPTICAL PROPERTIES OF PERFECTMgOANDMgOWITHFCENTER UNDER HIGH PRESSURE