Abstract:Organometal halide perovskites featuring solution-processable characteristics, high photoluminescence quantum yield (PLOY), and color purity, are an emerging class of semiconductor with considerable potential applications in optoelectronic devices. Electron injection layer is an important component of perovskite light-emitting device, which determines the growth of perovskite film directly. In this paper, the perovskite light-emitting diodes (PeLEDs) based on n-type nanocrystalline silicon oxide (n-nc-SiOx:H) electron injection layer are designed and realized. This novel electron injecting material is prepared by the plasma enhanced chemical vapor deposition (PECVD), and its smooth surface and matched energy band result in superior perovskite crystallinity and low electron injection barrier from the electron injecting layer to the emissive layer, respectively. However, the external quantum efficiency (EQE) of PeLED is as low as 0.43%, which relates to defects and leakage current due to the incomplete surface coverage of perovskite film. The fast exciton emission decay (< 10 ns) stems from strong non-radiative energy transfer to the trap states, and represents a big challenge in fabricating high-efficiency PeLEDs. In order to obtain desirable perovskite film morphology, an excessive proportion of methylammonium bromide (MABr) is incorporated into the perovskite solution, and a volume of benzylamine (PMA) is added into the chlorobenzene antisolvent. The perovskite films suffer low PLQY and short PL lifetime if only MABr or PMA is introduced. When the molar ratio of MABr is higher than 60%, the luminescence quenching arising from Joule heating is depressed by employing PMA, contributing to a higher PLQY (> 30%) and a longer carrier lifetime. The synergistic effect of MABr and PMA increase the coverage and reduce the trap density of perovskite film, inhibit the luminescence quenching in the annealing process, and thus facilitating the perovskite film with higher quality. Finally, the n-i-p PeLED exhibits green-light emission with a maximum current efficiency of 7.93 cd.A(-1) and a maximum EQE up to 2.13% is obtained. These facts provide a novel electron injecting material and a feasible process for implementing the PeLEDs. With further optimizing the perovskite layer and device configuration, the performance of n-i-p type PeLEDs will be improved significantly on the basis of this electron injection material.

Synergistic Molecular Engineering of Hole‐Injecting Conducting Polymers Overcomes Luminescence Quenching in Perovskite Light‐Emitting Diodes

Control of Interface Defects for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes Using Nickel Oxide Hole Injection Layer.

Conjugated Polyelectrolytes as Efficient Hole Transport Layers in Perovskite Light-Emitting Diodes.

Efficient Light-Emitting Diodes Based on Nanocrystalline Perovskite in A Dielectric Polymer Matrix

Perovskite-molecule Composite Thin Films for Efficient and Stable Light-Emitting Diodes.

Improved Efficiency for Silicon‐Based Perovskite Light‐Emitting Diodes Via Interfacial Hydrophilic Modification

A Self‐Assembling Molecule for Improving the Mobility in PEDOT:PSS Hole Transport Layer for Efficient Perovskite Light‐Emitting Diodes

Boosting the Efficiency and Stability of Perovskite Light-Emitting Devices by a 3-Amino-1-propanol-Tailored PEDOT:PSS Hole Transport Layer

Efficient Perovskite Light-Emitting Diodes Achieved by Suppressing the Acidic Surface of PEDOT:PSS Films

Self-assembled mono-hole-injecting layers towards efficient deep-blue perovskite light-emitting diodes

Modification of Interface Between PEDOT:PSS and Perovskite Film Inserting an Ultrathin LiF Layer for Enhancing Efficiency of Perovskite Light-Emitting Diodes

High-Performance perovskite quantum dots light-emitting diodes with hole transport layer engineering and synergetic outcoupling enhancement

Low‐Dimensional Phase Distribution of Quasi‐2D Perovskites Induced by Interfacial Effect Enables Efficient Blue Lighting‐Emitting Diodes

Perovskite Light-Emitting Diodes with Low Roll-off Efficiency Via Interfacial Ionic Immobilization

Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer

A Pre-Solution Mixing Precursor Method for Improving the Crystallization Quality of Perovskite Films and Electroluminescence Performance of Perovskite Light-Emitting Diodes.

High-efficiency perovskite-organic blend light-emitting diodes featuring self-assembled monolayers as hole-injecting interlayers

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Efficient All‐Solution‐Processed Perovskite Light‐Emitting Diodes Enabled by Small‐Molecule Doped Electron Injection Layers

Efficient Inorganic Perovskite Light-Emitting Diodes by Inducing Grain Arrangement via a Multifunctional Interface

Solving the Contradiction of Work Function and Conductivity in PEDOT:PSS to Achieve High‐Performance Perovskite Light‐Emitting Diode via Aniline Interface Modification