Science's gem: diamond science 2009
Alison Mainwood,Mark E Newton,Marshall Stoneham
DOI: https://doi.org/10.1088/0953-8984/21/36/360301
2009-08-19
Abstract:Natural diamond has been valued for its appearance and mechanical properties for at least two thousand years. As a gem stone diamond is unsurpassed. However, scientific work, especially in the last 20 years, has demonstrated that diamond has numerous surprising properties and many unique ones. Some of the extreme properties have been known for many years, but the true scale of diamond's other highly desirable features is still only coming to light as control in the synthesis of diamond, and hence material perfection, improves. The ultimate prize for man-made diamond is surely not in the synthesis of gem stones, but in delivering technological solutions enabled by diamond to the challenges facing our society today. If the special properties are to be exploited to their full potential, at least four crucial factors must be considered. First, there must be sufficient scientific understanding of diamond to make applications effective, efficient and economical. Secondly, the means of fabrication and control of properties have to be achieved so that diamond's role can be optimised. Thirdly, it is not enough that its properties are superior to existing materials: they must be so much better that it is worth initiating new technologies to exploit them. Finally, any substantial applications will have to address the society's major needs worldwide. The clear technology drivers for the 21st century come from the biomedical technologies, the demand for energy subject to global constraints, and the information technologies, where perhaps diamond will provide the major enabling technology [1]. The papers in this volume concern the solid state physics of diamond, and primarily concern the first two factors: understanding, and control of properties. They address many of the outstanding basic problems, such as the identification of existing defects, which affect the material's properties, both desirable and less so. Regarding future substantial applications, one paper discusses diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no dislocations. The understanding of the critical processes that are involved in CVD diamond growth are becoming clearer. Two papers in this issue model it on a microscopic scale [11, 12], and a further two explore the practical techniques [13, 14] in order to lead to improvement in deposition techniques. Diamond is emerging as an engineering material [3] with its cost no longer regarded as prohibitive even for some large-scale uses, such as the fusion reactor first wall. It is striking how few useful dopants can be put into diamond in a controlled way. The studies reported here, whether theory or experiment, concentrate on phosphorus [14] as the donor, and demonstrate that boron (although deep in semiconductor terms,) can act as the acceptor [3] in practical devices. Other impurities, with deeper levels, such as nitrogen [15], with the muon as an honorary hydrogen [16], are studied in depth. Here, many of the characterization techniques developed over several decades have been brought to bear, to attempt to quantify impurities and defects and ultimately assist in improving the crystal quality [17, 18, 15]. However, further, more novel techniques such as reflection anisotropy spectroscopy [19] and luminescence lifetime mapping [20] have been introduced to diamond in this issue, and one can see how such techniques might play a crucial role in areas such as systems for quantum information processing. The presence and migration of radiation damage defects [21, 22], vacancies and interstitials, and vacancy clusters can dramatically influence the exploitable properties of diamond [23, 24]. It is now apparent that charge traps not only impact on electrical properties, but also on the colour of diamond and that thermo-chromic and photo-chromic effects are more common than previously thought [25, 23]. Combinations, like the negatively charged nitrogen-vacancy centre, have proved impressive in quantum information studies [26]. But diamond has yet to benefit from the sort of dopant engineering that has helped silicon to become ubiquitous. It is becoming clear that because of the deep ionisation energies of the dopants that can be incorporated into diamond, conventional semiconductor physics can only be applied at high temperatures; rather different technologies have to be exploited to ensure that diamond's potential for devices is fulfilled. There are technical improvements which need to be made: the elimination of defects that trap carriers, cause de-coherence, affect the colour or strength, or have other serious effects in the relevant application, and the development of robust ohmic contacts [27]. The material developments of the last 50 years include silicon becoming the semiconductor of choice, many new and better-developed polymers, the transformation of communications by silica-based optical fibres, and the emergence of synthetic diamond. Could diamond's special virtues yield major new opportunities? Its optical properties are exceptional, usually in desirable ways (high refractive indices can create indirect problems). The mechanical properties are truly outstanding, again usually in desirable ways (adhesion can be challenging). The thermal properties are similarly exceptional, with a thermal conductivity that exceeds copper. Diamond withstands aggressive environments, including extremes of pH. Its carrier mobility can be phenomenal, and electron emission can be excellent. Moreover, diamond can be compatible with silicon electronics, even if the involvement of a second material is inconvenient. Here the problems start. Even limited developments could be significant. For instance, the ability to control the populations of the various N, B, P and vacancy centres would open up potentially unique optoelectronic and spintronic opportunities. Control of diamond's properties is difficult, but this is where basic research can help (using all the techniques explored in this issue, and more). It is barely practical to create n-type diamond, but unipolar devices, exploiting excellent quality boron doped p-type material, can be designed [3]. Electrical contacts can be tricky to fabricate, but progress is being made here [3, 27]. Diamond is perceived as unacceptably expensive, but for a high-quality device for an exceptional environment, this is not a problem. Carbon-based electronic materials are strikingly diverse. They include diamond, graphite, nanotubes and buckyball structures, amorphous carbons, and nanodiamond. Add hydrogen and one has a range of diamond-like carbons and the wealth of organics. Such carbon-based materials include small molecules and polymers: impressive insulators, semiconducting and conducting polymers, switchable forms, superconducting and magnetic forms, and some with the highest electrical conductivities of any material. Diamond-like carbons can have controllable mechanical properties from the viscoelastic to the highly rigid. Photochemistry brings opportunities for novel processing methods. Even water-based processing may sometimes be possible (alas, not for diamond), and additional tools like self-organisation of organic molecules on surfaces have been demonstrated. The best carbons have impressive, sometimes supreme, performances, including the mobility and optical properties of diamond, spin-conserving transport in carbon nanotubes, and electron emission. For almost all measures of performance, there is some carbon-based material that performs better than silicon. Might hybrid carbon-based materials be more successful even than silicon [28]? Should we think less about 'diamond' and more about the integration of diamond as one component of carbon electronics? Device fabrication needs lithography optics and resists, and processing at the anticipated smaller scales may well exploit new electronic excitation methods. Alternative dielectrics and interconnect materials introduce new compatibility issues, and there are further varied constraints from displays, spintronic components, electron emitters or transparent conductors. Could the many carbon-based materials with interesting functional properties lead to a new class of alternative systems? This collection of papers was brought together to celebrate 60 years of conferences sponsored by the De Beers Group of companies on the science and technology of diamond. The transformation of diamond science and technology over those 60 years can be seen in varied ways. First, there has been a series of books stimulated by the conferences [29–31] complementing numerous other more recent texts on diamond (e.g. [32]). These show a striking evolution from the early pioneering studies of tribology, radiation damage, and thermal and optical properties to a wider range of electronic properties, spectroscopies, and characterization from the macroscopic to nanoscopic scales, as well as the now almost universal dialogue between experiment and theory. Secondly, new experimental and theoretical techniques have emerged, many of which are featured in the papers in this issue. Thirdly, there is a range of new technologies only made possible because of the catalytic role of the conferences. These include the spectroscopies that distinguish natural from synthetic or treated diamonds in a way that earns customer confidence. There are also new customer products, like speaker domes, where success has depended on the understanding of mechanical properties at a level not commonly available. Potentially big applications, like the fusion reactor's first wall, will follow on from early radiation damage studies. Fourthly, the young scientists who have been supported over the years have now made their way in many fields, not just diamond research, but certainly including technologies that use diamond. The sponsorship of science in this field has benefited both those supported and those who provide that support. Finally, we see serious thoughts about what might be the big new technologies of the 21st century, since these will need a fundamental understanding of materials properties and their control. There has been exceptional progress in this area, in specimen sizes, quality, and performance. These massive improvements in materials availability create opportunities for the major technological applications in the energy, environment, health and information technologies that will surely drive the big industrial expansions over the next decades. References [1] Stoneham A M 2007 Thinking about diamond (ed P Bergonzo, R Gat, R B Jackman and C E Nebel) MRS Proc. 956 1–10 [2] Stoneham A M 2008 Future Perspectives for Diamond for Physics and Applications of CVD Diamond ed S Koizumi, M Nesladek and C E Nebel (New York: Wiley-VCH) [3] Balmer R S et al 2009 J. Phys.: Condens. Matter 21 364221 [4] Stoneham A M, Matthews J R and Ford I J 2004 J. Phys.: Condens. Matter 16 S2597 [5] Liang Q, Yan C, Meng Y, Lai J, Krasnicki S, Mao H and Hemley R J 2009 J. Phys.: Condens. Matter 21 364215 [6] Stachel T and Harris J W 2009 J. Phys.: Condens. Matter 21 364206 [7] McNeill J, Pearson D G, Klein-BenDavid O, Nowell G M, Ottley C J and Chinn I 2009 J. Phys.: Condens. Matter 21 364207 [8] Martineau P M, Gaukroger M P, Guy K B, Lawson S C, Twitchen D J, Friel I, Hansen J O, Summerton G C, Addison T P G and Burns R 2009 J. Phys.: Condens. Matter 21 364205 [9] Burns R C et al 2009 J. Phys.: Condens. Matter 21 364224 [10] Pinto H and Jones R 2009 J. Phys.: Condens. Matter 21 364220 [11] May P W, Allan N L, Ashfold M N R, Richley J C and Mankelevich Yu A 2009 J. Phys.: Condens. Matter 21 364203 [12] Butler J E, Mankelevich Yu A, Cheesman A, Ma J and Ashfold N R 2009 J. Phys.: Condens. Matter 21 364201 [13] Silva F, Hassouni K, Bonnin X and Gicquel A 2009 J. Phys.: Condens. Matter 21 364202 [14] Haenen K, Lazea A, Barjon J, D'Haen J, Habka N, Teraji T, Koizumi S and Mortet V 2009 J. Phys.: Condens. Matter 21 364204 [15] Felton S, Cann B L, Edmonds A M, Liggins S, Cruddace R J, Newton M E, Fisher D and Baker J M 2009 J. Phys.: Condens. Matter 21 364212 [16] Etmimi K M, Goss J P, Briddon P R and Gseia E M 2009 J. Phys.: Condens. Matter 21 364211 [17] Moore M 2009 J. Phys.: Condens. Matter 21 364217 [18] Maki J M, Tuomisto F, Kelly C J, Fisher D and Martineau P M 2009 J. Phys.: Condens. Matter 21 364216 [19] Schwitters M, Martin D S, Unsworth P, Farrell T, Butler J E and Weightman P 2009 J. Phys.: Condens. Matter 21 364218 [20] Liaugaudas G, Collins A T, Suhling K, Davies G and Heintzmann R 2009 J. Phys.: Condens. Matter 21 364210 [21] Collins A T and Kiflawi I 2009 J. Phys.: Condens. Matter 21 364209 [22] Steeds J W, Sullivan W, Wotherspoon A and Hayes J M 2009 J. Phys.: Condens. Matter 21 364219 [23] Fisher D, Sibley S J and Kelly C J 2009 J. Phys.: Condens. Matter 21 364213 [24] Bangert U, Barnes R, Gass M H, Bleloch A L, and Godfrey I S 2009 J. Phys.: Condens. Matter 21 364208 [25] Khan R U A, Martineau P M, Cann B L, Newton M E and Twitchen D J 2009 J. Phys.: Condens. Matter 21 364214 [26] Stoneham A M, Harker A H and Morley G W 2009 J. Phys.: Condens. Matter 21 364222 [27] Evans D A, Roberts O R, Williams G T, Vearey-Roberts A R, Bain F, Evans S, Langstaff D and Twitchen D J 2009 J. Phys.: Condens. Matter 21 364223 [28] Stoneham A M 2004 Nat. Mater. 3 3 [29] Berman R (ed) 1965 Physical Properties of Diamond (Oxford: Clarendon) [30] Field J E (ed) 1979 The Properties of Diamond (London: Academic) [31] Field J E (ed) 1992 The Properties of Natural and Synthetic Diamond (London: Academic) [32] Sussmann R S (ed) 2009 CVD Diamond for Electronic Devices and Sensors (Wiley Series in Materials for Electronic and Optoelectronic Applications) (New York: Wiley)
What problem does this paper attempt to address?
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N- and P-type doping of diamonds: A review
Maria Sultana,Subrata Karmakar,Ariful Haque
DOI: https://doi.org/10.1016/j.mssp.2024.109024
IF: 4.1
2024-11-06
Materials Science in Semiconductor Processing
Abstract:Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features-a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm 2 /V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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A Dawn for Carbon Electronics?
Gehan A. J. Amaratunga
DOI: https://doi.org/10.1126/science.1075868
IF: 56.9
2002-01-01
Science
Abstract:Diamond is in many ways the perfect semiconductor material for high power electronic applications. But difficulties with making diamond films with the required purity and structural integrity has prevented widespread application. In his Perspective, [Amaratunga][1] highlights the report by [ Isberg et al .][2], who have overcome these problems. They report the highest electron and hole mobility values in diamond to date. [1]: http://www.sciencemag.org/cgi/content/full/297/5587/1657 [2]: http://www.sciencemag.org/cgi/content/short/297/5587/1670
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High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond
Ting Cheng,Zhongfan Liu,Zhirong Liu
DOI: https://doi.org/10.1039/d0tc03253k
IF: 6.4
2020-01-01
Journal of Materials Chemistry C
Abstract:Very recently, fluorinated single-layer diamond (called diamane) was successfully prepared for the first time through the conversion of bilayer graphene in a mild way using a chemical vapor deposition approach, which is stable under ambient atmosphere. Herein, we performed in-depth first-principles calculations on fluorinated and hydrogenated diamane. Our calculations reveal that fluorinated diamane is an ultrathin material with a direct-wide bandgap at the Gamma-point, which is 3.86 eV larger than that of hydrogenated diamane, when using the G(0)W(0)method. Such a bandgap could be effectively modulated by applying external strains or introducing fluorine vacancy defects. Besides, their elastic moduli are comparable to that of graphene and higher than those of most other 2D materials. The ideal tensile strength is dictated by soft-mode phonon instability under uniaxial tension and elastic instability under biaxial strain. Most surprisingly, we found that the calculated electron mobility (2732 cm(2)V(-1)s(-1)) and hole mobility (1565 cm(2)V(-1)s(-1)) in these two diamond-like monolayers are superior to those of III-V semiconductor compounds. Finally, the Raman-active phonon frequencies were characterized to serve as a fingerprint for the experimentally obtained high-quality diamane. These features will provide these materials with great potential for future applications in nano-optics, nanoelectronics, and nano-electromechanical systems.
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Diamond semiconductor and elastic strain engineering
Chaoqun Dang,Anliang Lu,Heyi Wang,Hongti Zhang,Yang Lu
DOI: https://doi.org/10.1088/1674-4926/43/2/021801
2022-02-01
Journal of Semiconductors
Abstract:Abstract Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the “elastic strain engineering” strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.
physics, condensed matter
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Diamond power devices: state of the art, modelling, figures of merit and future perspective
N Donato,N Rouger,J Pernot,G Longobardi,F Udrea
DOI: https://doi.org/10.1088/1361-6463/ab4eab
2019-12-17
Abstract:Abstract With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm −1 ∙K −1 at RT of any material, high hole mobility (>2000 cm 2 V −1 s −1 ), high critical electric field (>10 MV cm −1 ), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics.
physics, applied
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A Review on Metastable Silicon Allotropes
Linlin Fan,Deren Yang,Dongsheng Li
DOI: https://doi.org/10.3390/ma14143964
IF: 3.4
2021-01-01
Materials
Abstract:Diamond cubic silicon is widely used for electronic applications, integrated circuits, and photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical properties. However, it is a semiconductor with an indirect band gap, depriving its further development. Fortunately, other polymorphs of silicon have been discovered successfully, and new functional allotropes are continuing to emerge, some of which are even stable in ambient conditions and could form the basis for the next revolution in electronics, stored energy, and optoelectronics. Such structures can lead to some excellent features, including a wide range of direct or quasi-direct band gaps allowed efficient for photoelectric conversion (examples include Si-III and Si-IV), as well as a smaller volume expansion as lithium-battery anode material (such as Si-24, Si-46, and Si-136). This review aims to give a detailed overview of these exciting new properties and routes for the synthesis of novel Si allotropes. Lastly, the key problems and the developmental trends are put forward at the end of this article.
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Recent Advances in Single Crystal Diamond Device Fabrication for Photonics, Sensing and Nanomechanics
Dipti Rani,Oliver Roman Opaluch,Elke Neu,Oliver Opaluch
DOI: https://doi.org/10.3390/mi12010036
IF: 3.4
2020-12-30
Micromachines
Abstract:In the last two decades, the use of diamond as a material for applications in nanophotonics, optomechanics, quantum information, and sensors tremendously increased due to its outstanding mechanical properties, wide optical transparency, and biocompatibility. This has been possible owing to advances in methods for growth of high-quality single crystal diamond (SCD), nanofabrication methods and controlled incorporation of optically active point defects (e.g., nitrogen vacancy centers) in SCD. This paper reviews the recent advances in SCD nano-structuring methods for realization of micro- and nano-structures. Novel fabrication methods are discussed and the different nano-structures realized for a wide range of applications are summarized. Moreover, the methods for color center incorporation in SCD and surface treatment methods to enhance their properties are described. Challenges in the upscaling of SCD nano-structure fabrication, their commercial applications and future prospects are discussed.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
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A Dawn For Carbon Etectronics?
Gehan A. J. Amaratunga
DOI: https://doi.org/10.1126/science.1075868
IF: 56.9
2002-01-01
Science
Abstract:Diamond is in many ways the perfect semiconductor material for high power electronic applications. But difficulties with making diamond films with the required purity and structural integrity has prevented widespread application. In his Perspective, Amaratunga highlights the report by Isberg et al., who have overcome these problems. They report the highest electron and hole mobility values in diamond to date.
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CVD diamond single crystals with NV centres: a review of material synthesis and technology for quantum sensing applications
J. Achard,V. Jacques,A. Tallaire
DOI: https://doi.org/10.48550/arXiv.1912.09749
2019-12-20
Applied Physics
Abstract:Diamond is a host for a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. The plasma assisted Chemical Vapour Deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly in-situ doped into a high crystalline quality diamond matrix in a controlled way allowing the production of single isolated centres or ensembles that can potentially be integrated into a device. In this paper we will provide an overview on the requirements for synthesizing quantum-grade diamond films by CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to position diamond as one of the most promising solid-state quantum system and the first industrial applications in sensing are just starting to emerge.
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Diamond for Electronics: Materials, Processing and Devices
Daniel Araujo,Mariko Suzuki,Fernando Lloret,Gonzalo Alba,Pilar Villar
DOI: https://doi.org/10.3390/ma14227081
2021-11-22
Abstract:Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga's figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.
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Diamond Integrated Quantum Photonics: A Review
Prasoon K. Shandilya,Sigurd Flågan,Natalia C. Carvalho,Elham Zohari,Vinaya K. Kavatamane,Joseph E. Losby,Paul E. Barclay
DOI: https://doi.org/10.48550/arXiv.2207.08844
2022-07-18
Quantum Physics
Abstract:Integrated quantum photonics devices in diamond have tremendous potential for many quantum applications, including long-distance quantum communication, quantum information processing, and quantum sensing. These devices benefit from diamond's combination of exceptional thermal, optical, and mechanical properties. Its wide electronic bandgap makes diamond an ideal host for a variety of optical active spin qubits that are key building blocks for quantum technologies. In landmark experiments, diamond spin qubits have enabled demonstrations of remote entanglement, memory-enhanced quantum communication, and multi-qubit spin registers with fault-tolerant quantum error correction, leading to the realization of multinode quantum networks. These advancements put diamond at the forefront of solid-state material platforms for quantum information processing. Recent developments in diamond nanofabrication techniques provide a promising route to further scaling of these landmark experiments towards real-life quantum technologies. In this paper, we focus on the recent progress in creating integrated diamond quantum photonic devices, with particular emphasis on spin-photon interfaces, cavity optomechanical devices, and spin-phonon transduction. Finally, we discuss prospects and remaining challenges for the use of diamond in scalable quantum technologies.
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(Invited) Heterogeneous Integration of Ultrawide Bandgap III-Nitrides and Diamond
Edwin L. Piner,Mark W. Holtz
DOI: https://doi.org/10.1149/ma2023-02321580mtgabs
2023-12-22
ECS Meeting Abstracts
Abstract:Industry demands for power switching, amplification and photonic applications are continually pushing the limits of semiconductor device technologies leading to increasing applied voltages and, thus, higher electric fields while simultaneously requiring reduction in the size, weight and power consumption. In addition, recent heightened interest in higher temperature (and other extreme environment) applications, while simultaneously maintaining high-voltage and high-power performance, has inexorably led to ultrawide bandgap (UWBG) semiconductor materials. This interest in UWBG materials stems from superior properties that include high material hardness, breakdown strength to withstand large electric fields and mitigation of power dissipation during device switching, deliver high current density while operating at higher junction and ambient temperature. Among these materials are boron nitride in its hexagonal and cubic phases, gallium oxide, diamond, and aluminum gallium nitride. The versatile alloys of wurtzite Al x Ga 1-x N have long been demonstrated across the full composition range. The variation in E g with AlGaN composition, along with select WBG and UWBG materials, is shown in Figure 1 versus (in-plane for non-cubic) lattice constant. Premier WBG materials to date for electronics and photonics are SiC ( E g = 3.3 eV) and GaN ( E g = 3.4 eV). The latter has been successfully applied to high-power transistors and near ultraviolet photonics. In both electronics and photonics applications, the polarization fields of the wurtzite crystal structure, generally grown along (0001) direction, produce design challenges. In photonics, for example, the fields and band alignment couple to spatially separate electrically injected electrons and holes to reduce wavefunction overlap in quantum wells. In electronics, the internal fields have contributed to difficulties in the design of logic and bipolar transistor devices based on these materials. Despite this, the inherent polarization field and band offsets were successfully employed in the design of high electron-mobility transistors (HEMTs). The inherent AlGaN/GaN HEMT band offset produces a high electron concentration at the interface that spontaneously forms a two-dimensional electron gas (2DEG). Because charge flow in these devices is restricted to the 2DEG, current crowding results in intense self-heating. The local heating decreases electrical conductivity to produce a runaway scenario for elevating the Joule heating. Dissipating this heat, therefore, is the principal limiting factor in operating at power higher than 40 W/mm. The various temperature dependences of semiconductor device parameters are the principal drivers in the operation of semiconductor devices. The physics has inextricably led to UWBGs for future high temperature applications, > 300 °C, due to their lower intrinsic carrier density and thus the effects of leakage are orders of magnitudes less than Si-based devices. Furthermore, AlGaN and diamond offer superior high temperature mechanical stability due to their structural hardness and chemical inertness. Thermal management is essential for achieving higher power densities. Diamond is highly attractive for many applications due to its high hardness, transparency, chemical inertness, promising semiconductor properties, and its high thermal conductivity (κ) to 2500 W/m·K in natural material. Factors related to the consequences of self-heating in devices have motivated extensive research to improve the properties of diamond and produce better approaches to determine the thermal properties. Laboratory-grown diamond films exhibit significantly poorer κ than natural diamond and, when integrated with other electronic materials, a low thermal boundary conductance (TBC in W/m 2 ·K) that inhibits heat transfer between materials. The former originates from the ubiquitous polycrystalline nature of chemical vapor deposition (CVD) diamond and the presence of non-diamond carbon (NDC) in the layer. The low TBC stems from fundamental barriers to phonon propagation between two materials and from practical issues of poor diamond quality in the initial growth regime. Continued research is needed to improve κ in the polycrystalline diamond and mitigate the negative impact of the initial diamond layer on TBC. The current status of hetero-integration of UWBG AlGaN and diamond will be reviewed. Particular emphasis is given to high Al content AlGaN for near-bandgap matching with diamond. Patterned diamond grown using hot-filament CVD to realize unique three-dimensional lateral device structures in a self-aligned, as-grown fabrication process is employed. Engineering the AlGaN-diamond bandgap alignment is noteworthy at the nonpolar AlGaN – diamond interface including diamond surface terminations that produce either negative or positive electron affinity. The review will focus on improvements in material properties, especially the interfaces, that are critical to both charge and heat transport for UWBG device structures. Figure 1
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Thermal diffusion boron doping of single-crystal natural diamond
Jung-Hun Seo,Henry Wu,Solomon Mikael,Hongyi Mi,James P. Blanchard,Giri Venkataramanan,Weidong Zhou,Shaoqin Gong,Dane Morgan,Zhenqiang Ma
DOI: https://doi.org/10.1063/1.4949327
IF: 2.877
2016-05-28
Journal of Applied Physics
Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.
physics, applied
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Electronic and optical applications of diamond-like carbon
Amaratunga, G.
1993-01-01
Abstract:In this contribution emphasis is placed on examining the electronic and optical properties of a-C and a-C:H in their own right as those belonging to an amorphous semiconductor. It is shown that the electronic density of states in semiconducting a-C and a-C:H is very different from that of other group IV amorphous semiconductors due to the presence of π states associated with sp2 hybridised bonds. Even in tetrahedral amorphous carbon (ta-C) with sp3 bonding of up to 70-80%, the π and π* states tend to determine the electronic and optical properties. Such π states are of course not present in diamond. This is in contrast to the mechanical properties of ta-C which can be very close to those of diamond. The presence of π bonding (in addition to the σ bonding) gives a-C and a-C:H some advantageous properties compared to a-Si and a-Ge. Passive use of a-C and a-C:H in applications such as IR windows and passivation layers and their potential for active use as electronic materials in optoelectronic devices are discussed. As examples of the latter, use of doped ta-C as a wide band-gap material with Si for heterojunctions and a-C:H in band-gap modulated amorphous superlattices are examined
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Research progress of optoelectronic devices based on diamond materials
Houzhi Fei,Dandan Sang,Liangrui Zou,Shunhao Ge,Yu Yao,Jianchao Fan,Cong Wang,Qinglin Wang
DOI: https://doi.org/10.3389/fphy.2023.1226374
IF: 3.718
2023-08-11
Frontiers in Physics
Abstract:Diamond has a variety of unique characteristics, including integrates mechanics, electricity, heat, optics and other excellent properties, so that it is widely focus on the field of high and new technology, especially in the optoelectronic technology. Because diamond has the characteristics of high thermal conductivity, high breakdown field (10 mV/cm), high electron and hole mobility, it has a wide application prospect in high temperature, high power and high frequency photoelectric equipment. The wide bandgap (5.47 eV) makes diamond an ideal material in ultraviolet detectors (UV). Its high carrier mobility and breakdown field strength make it an ideal choice for field emission materials, which are expected to be used in high-power electronic devices in the next few years. At the same time, in addition to high hardness, it also has various of excellent physical properties, such as low coefficient of thermal expansion, low coefficient of friction, high acoustic propagation speed and high optical transmittance, so that it has broad application prospects in many fields such as machining, microelectronic devices, optical windows and surface coatings. In addition, diamond also has a high exciton binding energy (80 meV), which plays an important development in deep ultraviolet and high-energy particle detectors. In this article, the latest progress in the application of diamond-based optoelectronic devices is reviewed. A variety of advanced devices and physical phenomena are considered, for example, sensors, transistors, memory, Light-emitting diode (LEDs), ultraviolet detectors and field emission. This review will provide a new idea to promote the development of photoelectric applications based on diamond structure.
physics, multidisciplinary
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Tuning diamond electronic properties for functional device applications
Anliang Lu,Limin Yang,Chaoqun Dang,Heyi Wang,Yang Zhang,Xiaocui Li,Hongti Zhang,Yang Lu
DOI: https://doi.org/10.1080/26941112.2022.2151322
2022-12-06
Functional Diamond
Abstract:Because of its ultrahigh hardness, synthetic diamond has been widely used in advanced manufacturing and mechanical engineering. As an ultra-wide bandgap semiconductor, on the other hand, diamond recently shows a great potential in electronics industry due to its outstanding physical properties. However, like silicon-based electronics, the electrical properties of diamond should be well modulated before it can be practically used in electronic devices. In this work, we briefly review the recent progresses in producing high-quality, electronic grade synthetic diamonds, as well as several typical strategies, from the conventional element doping to the emerging "elastic strain engineering," (ESE) for tuning the electrical and functional properties of microfabricated diamonds. We also briefly show some device application demonstrations of diamond and outline some remaining challenges that are impeding diamond's further practical applications as functional devices and offer some perspective for future functional diamond development.
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Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics
Yuting Zheng,Chengming Li,Jinlong Liu,Junjun Wei,Xiaotong Zhang,Haitao Ye,Xiaoping Ouyang
DOI: https://doi.org/10.1007/s11706-022-0590-z
2022-03-01
Frontiers of Materials Science
Abstract:Chemical vapor deposited (CVD) diamond as a burgeoning multifunctional material with tailored quality and characteristics can be artificially synthesized and controlled for various applications. Correspondingly, the application-related "grade" concept associated with materials choice and design was gradually formulated, of which the availability and the performance are optimally suited. In this review, the explicit diversity of CVD diamond and the clarification of typical grades for applications, i.e., from resplendent gem-grade to promising quantum-grade, were systematically summarized and discussed, according to the crystal quality and main consideration of ubiquitous nitrogen impurity content as well as major applications. Realizations of those, from quantum-grade with near-ideal crystal to electronic-grade having extremely low imperfections and then to optical, thermal as well as mechanical-grade needing controlled flaws and allowable impurities, would competently fulfill the multi-field application prospects with appropriate choice in terms of cost and quality. Exceptionally, wide range defects and impurities in the gem-grade diamond (only indicating single crystal), which are detrimental for technology applications, endows CVD crystals with fancy colors to challenge their natural counterparts.
materials science, multidisciplinary
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Chemical vapour deposition synthetic diamond: materials, technology and applications
R S Balmer,J R Brandon,S L Clewes,H K Dhillon,J M Dodson,I Friel,P N Inglis,T D Madgwick,M L Markham,T P Mollart,N Perkins,G A Scarsbrook,D J Twitchen,A J Whitehead,J J Wilman,S M Woollard
DOI: https://doi.org/10.48550/arXiv.0909.1185
2009-09-07
Materials Science
Abstract:Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form, however non-planar geometries are also possible and enable a number of key applications. This article reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, based on the ability to synthesize a consistent and engineered high performance product.
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Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond
Zhaofeng Zhai,Chuyan Zhang,Bin Chen,Ying Xiong,Yan Liang,Lusheng Liu,Bing Yang,Nianjun Yang,Xin Jiang,Nan Huang
DOI: https://doi.org/10.1002/adfm.202401949
IF: 19
2024-04-20
Advanced Functional Materials
Abstract:A novel approach to engineering the electronic properties of diamond is reported on the diaphite nanoplatelet consisting of (11 ̄ 1) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes. The strong sp3/sp2‐hybridized interfacial covalent bonding induces the electron transfer from diamond to graphite, resulting in a significant cathodoluminescence peak blueshift compared to the H‐terminated diamond. Diamond, as a highly promising "extreme" semiconductor material, necessitates electronic property engineering to unleash its full potential in electronic and photonic devices. In this work, the diaphite nanoplatelet, consisting of (11 ̄ 1) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes, is facilely synthesized using one‐step microwave plasma enhanced chemical vapor deposition method. The high‐energy plasma created by the pillar plays a crucial role in the formation. Importantly, altered electronic and optical properties are determined in the diaphite nanoplatelet through electron energy loss spectrum, density functional theory calculations, and cathodoluminescence spectroscopy. It is revealed that the strong sp3/sp2‐hybridized interfacial covalent bonding in the diaphite nanoplatelet induces the electron transfer from diamond to graphite. This modulates the electronic structure of the near‐interface layer of diamond and triggers a new local trapping band below the conduction band minimum within the bandgap. Consequently, the covalently‐bonded diaphite exhibits a different optical emission characteristic ranging from 2.5 to 3.64 eV, featuring a significant peak blueshift of 430 meV compared to the H‐terminated diamond. This work demonstrates a novel method to engineer the electronic properties of diamond, opening avenues for functional semiconductor device applications of diamond.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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CVD diamond: a review on options and reality
Christoph E. Nebel
DOI: https://doi.org/10.1080/26941112.2023.2201592
2023-04-25
Functional Diamond
Abstract:In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology is predicted based on applications of better suited materials which can fulfil these criteria. Carbon based materials and here especially diamond are promising candidates. Bulk and surface properties of diamond are introduced in combination with applications in power electronics, quantum technology, bio-and electrochemistry and MEMS. Large amounts of diamond seeds and wafers will be required to approach commercial markets. Their availability in combination with quality and size as well as required energies for production are introduced. The production of CVD diamond is currently about 100–250 times more intense with respect to energy than Silicon. A problem which is addressed by use of new solid-sates microwave sources. The definition of "green diamond" is given taking into account requirements with respect to energy and methane/hydrogen production. A brief discussion and comparison of diamond global markets and related potentials in comparison to SiC and GaN is given.