The main factors influencing the O vacancy formation on the Ir doped ceria surface: A DFT+U study

Z. X. Yang,D. W. Ma,X. H. Yu,K. Hermansson
DOI: https://doi.org/10.1140/epjb/e2010-00295-x
2010-10-01
The European Physical Journal B
Abstract:Abstract.The effects of Ir doping on the oxygen vacancy formationenergy have been investigated using the DFT+U method, i.e., first-principlesdensity functional theory calculations with the inclusion of the on-siteCoulomb interaction. The main factors influencing the reducibility ofIr-doped ceria are studied carefully. It is found that, although the Irdoping induces gap states (MIGS) as do other noble metals (Pd, Pt, Rh), thestructural relaxation (instead of the electronic structure relaxation) isthe main factor responsible for the decrease of the oxygen vacancy formationenergy, i.e., the Ir doping makes structural distortions much moreexothermic for the reduced ceria.
physics, condensed matter
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