Semiconductor technology looks up

Philip Ball

DOI: https://doi.org/10.1038/s41563-021-01192-z

IF: 41.2

2022-02-01

Nature Materials

Abstract:Nature Materials, Published online: 02 February 2022; doi:10.1038/s41563-021-01192-zSemiconductor technology looks up

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

What problem does this paper attempt to address?

Nano-semiconductor Materials in Photo-electronic Fields

牛俊杰,沙健,马向阳,张辉,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.11.020

2002-01-01

Abstract:Recently,research on nano-semiconductor materials in photo-electronic fields has drawn more and more interest.Nano-semiconductor materials show outstanding properties because of their quantum confinement effects,size effects.They are expected to play a key role in future micro-electronics and nano-electronics.This paper describes the history,current status and limitations of nano-semiconductor materials in photo-electronic fields.
The future of two-dimensional semiconductors beyond Moore's law

Ki Seok Kim,Junyoung Kwon,Huije Ryu,Changhyun Kim,Hyunseok Kim,Eun-Kyu Lee,Doyoon Lee,Seunghwan Seo,Ne Myo Han,Jun Min Suh,Jekyung Kim,Min-Kyu Song,Sangho Lee,Minsu Seol,Jeehwan Kim

DOI: https://doi.org/10.1038/s41565-024-01695-1

Abstract:The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.
New Materials for Post-Si Computing: Ge and GeSn Devices

Gupta Suyog,Gong Xiao,Zhang Rui,Yeo Yee-Chia,Takagi Shinichi,Saraswat Krishna C.

DOI: https://doi.org/10.1557/mrs.2014.163

IF: 5

2014-01-01

MRS Bulletin

Abstract:As Si-transistor technology advances beyond the 10 nm node, the device research community is increasingly looking into the possibility of replacing Si with novel, high mobility materials as the transistor channel. Among several possible candidate materials, germanium and germanium-tin alloys (GeSn) have emerged as strong contenders for the next generation of complementary metal oxide semiconductor (CMOS) transistors. This article presents a comprehensive overview of the state of the art in Ge and GeSn transistor research. We address several key material challenges involved in fabricating high-performance Ge/GeSn-based CMOS transistors, such as gate stack formation and achieving low-resistance contacts to transistor source/drain regions. Using Ge/GeSn as channel materials, we present a FinFET-based, Si-compatible CMOS solution for device dimensions expected in the 7 nm technology node, discuss the practical challenges involved in realizing this design, and highlight directions for future research.
Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Seunguk Song,Mahfujur Rahaman,Deep Jariwala

DOI: https://doi.org/10.1021/acsnano.3c12938

IF: 17.1

2024-04-17

ACS Nano

Abstract:2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Exploring The Potential of Graphene and Gallium Nitride: Novel Semiconductor Materials in The Modern Era

Bowen Xiao

DOI: https://doi.org/10.54097/jvnhsm05

2024-01-26

Abstract:This article presents an in-depth exploration of two cutting-edge semiconductor materials: graphene and gallium nitride. It examines their structural characteristics, applications, and future potential in the context of advancing science and technology. Graphene, a remarkable material, exhibits exceptional theoretical properties, making it a versatile contender for a wide range of applications. Gallium nitride, on the other hand, finds its strength in power and wireless base stations, offering distinct advantages in specific domains. One common challenge faced by both materials is their high production cost, complexity, and limited output. However, it is foreseeable that ongoing research will overcome these hurdles, propelling graphene, and gallium nitride into the forefront of technological innovation. As science and technology continue to progress, these two materials are poised to play increasingly significant roles across various industries. Their remarkable attributes and evolving feasibility will likely draw greater attention from researchers and industry stakeholders alike, shaping the technological landscape of the future. This article's comprehensive analysis provides valuable insights into the potential of graphene and gallium nitride, offering a foundation for further research and development in the field of semiconductor materials.
Two-dimensional materials for future information technology: status and prospects

Hao Qiu,Zhihao Yu,Tiange Zhao,Qi Zhang,Mingsheng Xu,Peifeng Li,Taotao Li,Wenzhong Bao,Yang Chai,Shula Chen,Yiqi Chen,Hui-Ming Cheng,Daoxin Dai,Zengfeng Di,Zhuo Dong,Xidong Duan,Yuhan Feng,Yu Fu,Jingshu Guo,Pengwen Guo,Yue Hao,Jun He,Xiao He,Jingyi Hu,Weida Hu,Zehua Hu,Xinyue Huang,Ziyang Huang,Ali Imran,Ziqiang Kong,Jia Li,Qian Li,Weisheng Li,Lei Liao,Bilu Liu,Can Liu,Chunsen Liu,Guanyu Liu,Kaihui Liu,Liwei Liu,Sheng Liu,Yuan Liu,Donglin Lu,Likuan Ma,Feng Miao,Zhenhua Ni,Jing Ning,Anlian Pan,Tian-Ling Ren,Haowen Shu,Litao Sun,Yue Sun,Quanyang Tao,Zi-Ao Tian,Dong Wang,Hao Wang,Haomin Wang,Jialong Wang,Junyong Wang,Wenhui Wang,Xingjun Wang,Yeliang Wang,Yuwei Wang,Zhenyu Wang,Yao Wen,Haidi Wu,Hongzhao Wu,Jiangbin Wu,Yanqing Wu,Longfei Xia,Baixu Xiang,Luwen Xing,Qihua Xiong,Xiong Xiong,Jeffrey Xu,Tao Xu,Yang Xu,Liu Yang,Yi Yang,Yuekun Yang,Lei Ye,Yu Ye,Bin Yu,Ting Yu,Hui Zeng,Guangyu Zhang,Hongyun Zhang,Jincheng Zhang,Kai Zhang,Tao Zhang,Xinbo Zhang,Yanfeng Zhang,Chunsong Zhao,Yuda Zhao,Ting Zheng,Peng Zhou,Shuyun Zhou,Yuxuan Zhu,Deren Yang,Yi Shi,Han Wang,Xinran Wang

DOI: https://doi.org/10.1007/s11432-024-4033-8

2024-06-02

Science China Information Sciences

Abstract:Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

computer science, information systems,engineering, electrical & electronic
The Road for 2D Semiconductors in the Silicon Age (adv. Mater. 48/2022)

Shuiyuan Wang,Xiaoxian Liu,Peng Zhou

DOI: https://doi.org/10.1002/adma.202270332

IF: 29.4

2022-01-01

Advanced Materials

Abstract:Advanced MaterialsVolume 34, Issue 48 2270332 FrontispieceFree Access The Road for 2D Semiconductors in the Silicon Age (Adv. Mater. 48/2022) Shuiyuan Wang, Shuiyuan Wang ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this authorXiaoxian Liu, Xiaoxian Liu ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this authorPeng Zhou, Peng Zhou ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 China Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this author Shuiyuan Wang, Shuiyuan Wang ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this authorXiaoxian Liu, Xiaoxian Liu ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this authorPeng Zhou, Peng Zhou ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433 China Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433 ChinaSearch for more papers by this author First published: 01 December 2022 https://doi.org/10.1002/adma.202270332AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract 2D Semiconductors In article number 2106886, Peng Zhou and co-workers review and discuss the two main development paths for 2D semiconductors in the silicon age: mitigating the challenges of silicon-based devices and creating technologies that go beyond the von Neumann architecture; claiming that achieving heterogeneous integration of 2D semiconductors with silicon is the most promising option. Volume34, Issue48Special Issue: 2D CircuitsDecember 1, 20222270332 RelatedInformation
Molecular approach to semiconductors: a shift towards ecofriendly manufacturing and neuroinspired interfaces

Kirill Yu. Monakhov,Christoph Meinecke,Marco Moors,Carolin Schmitz-Antoniak,Thomas Blaudeck,Julia Hann,Christopher Bickmann,Danny Reuter,Thomas Otto,Stefan E. Schulz,Harish Parala,Anjana Devi

DOI: https://doi.org/10.1515/pac-2024-0242

2024-09-15

Pure and Applied Chemistry

Abstract:Energy dissipation through physical downscaling towards more complex types of memory and logic devices, loss of ultrapure water and consumption of large amounts of (toxic) chemicals for wafer cleaning processes, as well as high thermal budget of solid-state synthesis and thin film growth of standard semiconductors including the use of rare earth elements – all this poses great challenges for semiconductor materials science and technology. Therefore, research and development of alternative methods for micro- and nanofabrication and chemical functionalization of a new type of resource- and energy-efficient semiconductors as the core component of every computer chip is crucial. One of the promising opportunities is the transformation of today's complementary metal-oxide-semiconductor (CMOS) electronics into ecofriendly and neuroinspired electronics driven by molecular design and multi-level switching mechanisms at room temperature. The sustainable chemical technology of electron transport and switching materials in semiconductor manufacturing and the development of devices with new unconventional nanophysics, improved performance, and augmented functionalities (beyond-CMOS and More-than-Moore) is becoming increasingly important in the context of a gradual transition to a future-oriented concept of Internet of Everything (IoE). In this article, we focus on the technological significance of semiconductor preparation from single-source (molecular) precursors and the prospect of functionalizing semiconductors using DNA origami nanotechnology and stimuli-responsive metal–oxygen cluster ions such as polyoxometalates (POMs). We also describe the advanced characterization of these qualified molecular systems by soft X-rays. We emphasize the technical relevance of using solution-based methods for the bottom-up preparation of novel and hybrid semiconductors as well as their challenging scalability and the compatibility of methods of molecular technology with lithography-based mass production. Our article aims to contribute to the achievement of the United Nations' Sustainable Development Goal 9 (Industry, Innovation and Infrastructure).

chemistry, multidisciplinary
Graphene and two-dimensional materials for silicon technology

Deji Akinwande,Cedric Huyghebaert,Ching-Hua Wang,Martha I. Serna,Stijn Goossens,Lain-Jong Li,H.-S. Philip Wong,Frank H. L. Koppens

DOI: https://doi.org/10.1038/s41586-019-1573-9

IF: 64.8

2019-09-25

Nature

Abstract:The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

multidisciplinary sciences
Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

Shengyao Chen,Shu Wang,Cong Wang,Zhongchang Wang,Qian Liu

DOI: https://doi.org/10.1016/j.nantod.2021.101372

IF: 17.4

2022-02-01

Nano Today

Abstract:2D-material semiconductors with unique photonic and optoelectronic properties process ultralow energy consumption and are naturally compatible to semiconductor fabrication process, which show great potential in many applications such as memristors, optoelectronic probers, energy devices, and catalytic system. Generally, electrode fabrication process inevitably introduces a non-Ohmic contact between the semiconductor and its electrodes due to the Schottky barrier and gap states, thus raising energy consumption and limiting device performance. Recently, seamless-contact technologies have been developed, which can turn the semiconductor-electrode contact to be Ohmic by eliminating gap states and Schottky barrier, thereby having fundamental implications on 2D-material-based devices. This work will review the recent progresses of the seamless contacts from both theory and experiment aspect, summarize the existing difficulties, exploring improvement of metal-semiconductor contact and propose future exploration direction. This review is timely and helpful to improve the performance of 2D-material-based devices by introducing seamless contact and approaching the Ohmic contact.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Semiconductors: 25th Anniversary Article: Materials for High‐Performance Biodegradable Semiconductor Devices (adv. Mater. 13/2014)

Suk‐Won Hwang,Gayoung Park,Huanyu Cheng,Jun‐Kyul Song,Seung‐Kyun Kang,Lan Yin,Jae‐Hwan Kim,Fiorenzo G. Omenetto,Yonggang Huang,Kyung‐Mi Lee,John A. Rogers

DOI: https://doi.org/10.1002/adma.201470082

IF: 29.4

2014-01-01

Advanced Materials

Abstract:The cover image shows a partially dissolved piece of silicon-based electronics built entirely using biologically and environmentally benign materials. This type of technology, sometimes referred to as transient electronics, offers potential applications in bioresorbable medical devices, ecofriendly electronics, environmental sensors, secure hardware systems, for example, and is reviewed by J. A. Rogers, K. M. Lee, and co-workers on page 1992.
Advanced semiconductor nanostructures

Lionel Vayssieres

DOI: https://doi.org/10.1016/j.crci.2005.06.038

2008-01-01

Comptes Rendus Chimie

Abstract:A novel approach to large bandgap semiconductor materials design is demonstrated. Based on a thermodynamical growth control concept, a low temperature aqueous thin film growth technique is presented to produce, at large scale and low cost, novel metal oxide-based nano- to micro-structures. Three-dimensional arrays consisting of building blocks of controlled morphologies, sizes and orientations, engineered from molecular to nano-, meso- or microscopic scales are generated onto various substrates. Semiconductor technology and in particular, photovoltaics and photocatalysis, shall be beneficiary of such designed arrays. Promising improvements in terms of overall efficiency and manufacturing costs as well as better fundamental understandings of their electronic structure are foreseen with the use of such purpose-built materials. To cite this article: L. Vayssieres, C. R. Chimie 9 (2006).
Process integration and future outlook of 2D transistors

Kevin P. O’Brien,Carl H. Naylor,Chelsey Dorow,Kirby Maxey,Ashish Verma Penumatcha,Andrey Vyatskikh,Ting Zhong,Ande Kitamura,Sudarat Lee,Carly Rogan,Wouter Mortelmans,Mahmut Sami Kavrik,Rachel Steinhardt,Pratyush Buragohain,Sourav Dutta,Tristan Tronic,Scott Clendenning,Paul Fischer,Ernisse S. Putna,Marko Radosavljevic,Matt Metz,Uygar Avci,Kevin P. O'Brien

DOI: https://doi.org/10.1038/s41467-023-41779-5

IF: 16.6

2023-10-13

Nature Communications

Abstract:The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary metal-oxide-semiconductor (CMOS) devices based on stacked 2D TMD nanoribbons and specifically highlight issues that still need to be resolved by the 2D community in five crucial research areas: contacts, channel growth, gate oxide, variability, and doping. While 2D TMD transistors have great potential, more research is needed to understand the physical interactions of 2D materials at the atomic scale. 2D semiconductors have been proposed as a potential option to replace or complement silicon electronics at the nanoscale. Here, the authors discuss the recent progress and remaining challenges that need to be addressed by the academic and industrial research communities towards the commercialization of 2D transistors.

multidisciplinary sciences
The Roadmap of 2D Materials and Devices Toward Chips

Anhan Liu,Xiaowei Zhang,Ziyu Liu,Yuning Li,Xueyang Peng,Xin Li,Yue Qin,Chen Hu,Yanqing Qiu,Han Jiang,Yang Wang,Yifan Li,Jun Tang,Jun Liu,Hao Guo,Tao Deng,Songang Peng,He Tian,Tian-Ling Ren

DOI: https://doi.org/10.1007/s40820-023-01273-5

2024-02-16

Abstract:Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
State of the Art and Future Perspectives in Advanced CMOS Technology

Henry H. Radamson,Huilong Zhu,Zhenhua Wu,Xiaobin He,Hongxiao Lin,Jinbiao Liu,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Hushan Cui,Jianfeng Gao,Hong Yang,Yong Du,Buqing Xu,Ben Li,Xuewei Zhao,Jiahan Yu,Yan Dong,Guilei Wang

DOI: https://doi.org/10.3390/nano10081555

IF: 5.3

2020-08-07

Nanomaterials

Abstract:The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Why all the fuss about 2D semiconductors?

Andres Castellanos-Gomez

DOI: https://doi.org/10.1038/nphoton.2016.53

2016-04-22

Abstract:Graphene is no longer alone; a family of atomically thin 2D semiconductors has emerged. Optoelectronics and photonics applications are in their experimental infancy but the future holds much promise.

Mesoscale and Nanoscale Physics,Materials Science
Metamaterials: Artificial Materials Beyond Nature

Shining Zhu,Xiang Zhang

DOI: https://doi.org/10.1093/nsr/nwy026

IF: 20.6

2018-01-01

National Science Review

Abstract:Research in advanced materials is continuously driving modern technologies forward.For example,semiconductors have laid the foundation for today’s electronics industry.While constantly searching for new materials in nature,another approach is to craft novel composite materials beyond the naturally available properties.This is accomplished by directly designing the
Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Zheng‐Dong Luo,Ming‐Min Yang,Yang Liu,Marin Alexe

DOI: https://doi.org/10.1002/adma.202005620

IF: 29.4

2021-02-12

Advanced Materials

Abstract:<p>Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal–oxide–semiconductor (CMOS) technologies and add unprecedented applications for next‐generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS‐process‐compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond‐Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p–n homojunctions and self‐powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Carbon based electronic technology in post-Moore era: progress, applications and challenges

Yi-Fan Liu,Zhi-Yong Zhang,

DOI: https://doi.org/10.7498/aps.71.20212076

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:In the past 60 years, silicon-based semiconductor technology has triggered off the profound change of our information society, but it is also gradually approaching to the physical limit and engineering limit as well. Thus, the global semiconductor industry has entered into the post-Moore era. Carbon nanotube has many excellent electronic properties such as high mobility and ultra-thin body, so it has become a hopeful candidate for the new semiconductor material in the post-Moore era. After more than 20 years of development, carbon based electronic technology has made fundamental breakthroughs in many basic problems such as material preparation, Ohmic metal-semiconductor contact and gate engineering. In principle, there is no insurmountable obstacle in its industrialization process now. Therefore, in this paper the intrinsic advantages of carbon based electronic technology in the post-Moore era is introduced, the basic problems, progress and optimization direction of carbon based electronic technology are summarized, the application prospects in the fields of digital circuits, radio frequency electronics, sensing and detection, three-dimensional integration and chips for special applications are presented. Finally, the comprehensive challenges to the industrialization of carbon based electronic technology are analyzed, and its future development is also prospected.

physics, multidisciplinary
2D materials for future heterogeneous electronics

Max C. Lemme,Deji Akinwande,Cedric Huyghebaert,Christoph Stampfer

DOI: https://doi.org/10.1038/s41467-022-29001-4

IF: 16.6

2022-03-16

Nature Communications

Abstract:Nature Communications, Published online: 16 March 2022; doi:10.1038/s41467-022-29001-4Graphene and related two-dimensional (2D) materials have remained an active field of research in science and engineering for over fifteen years. Here, the authors investigate why the transition from laboratories to fabrication plants appears to lag behind expectations, and summarize the main challenges and opportunities that have thus far prevented the commercialisation of these materials.

multidisciplinary sciences

Semiconductor technology looks up

Nano-semiconductor Materials in Photo-electronic Fields

The future of two-dimensional semiconductors beyond Moore's law

New Materials for Post-Si Computing: Ge and GeSn Devices

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Exploring The Potential of Graphene and Gallium Nitride: Novel Semiconductor Materials in The Modern Era

Two-dimensional materials for future information technology: status and prospects

The Road for 2D Semiconductors in the Silicon Age (adv. Mater. 48/2022)

Molecular approach to semiconductors: a shift towards ecofriendly manufacturing and neuroinspired interfaces

Graphene and two-dimensional materials for silicon technology

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

Semiconductors: 25th Anniversary Article: Materials for High‐Performance Biodegradable Semiconductor Devices (adv. Mater. 13/2014)

Advanced semiconductor nanostructures

Process integration and future outlook of 2D transistors

The Roadmap of 2D Materials and Devices Toward Chips

State of the Art and Future Perspectives in Advanced CMOS Technology

Why all the fuss about 2D semiconductors?

Metamaterials: Artificial Materials Beyond Nature

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Carbon based electronic technology in post-Moore era: progress, applications and challenges

2D materials for future heterogeneous electronics