Hartree-fock-limit properties for SiC, SiN, Si2, Si2* AND SiS

Florian Müller-Plathe,Leif Laaksonen
DOI: https://doi.org/10.1016/0009-2614(89)87578-5
IF: 2.719
1989-08-01
Chemical Physics Letters
Abstract:Finite-difference Hartree-Fock calculations are reported on the ground states of SiC, SiN, Si2, and SiS as well as on the first excited state of Si2. For all species a number of points on their respective potential energy curve are reported along with selected one-electron properties at these points. Spectroscopic properties are evaluated from the potential curves and compared to previous theoretical and, where available, experimental results. Basis-set effects in previous calculations on the electric and spectroscopic properties of these molecules and on energy differences between different electronic states are discussed.
chemistry, physical,physics, atomic, molecular & chemical
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