Abstract:Optoelectronic synapses based on 3D graphene/MoS2 heterostructure field‐effect transistors are developed. The device demonstrates remarkable light response with photoresponsivity up to 105 A W−1 at 590 nm. Furthermore, multiple synaptic neuromorphic functions are successfully emulated in ultraviolet, visible, near‐infrared, and different polarized light. A new concept is provided here for designing high‐performance optoelectronic synapses with polarization sensitivity. Optoelectronic synapses with information sensing, processing, and memory function are promoting the development of artificial visual perception systems. However, optoelectronic synapses' relatively inferior optoelectronic performance impedes their application in complex neuromorphic computing. Herein, optoelectronic synapses based on 3D graphene/molybdenum disulfide (MoS2) heterostructure field‐effect transistors are developed by using the double stress layer self‐rolled‐up method. The graphene, with excellent electrical properties, enhances the carrier transport capacity of the device. The unique continuous photoconductivity of MoS2 is suitable for simulating various synaptic nerve morphological functions. Meanwhile, the 3D resonant microcavity is added to enhance the optical field and make the device polarization sensitive, which reveals more intangible features of objects. The device demonstrates room‐temperature photodetection at ultraviolet, visible, near‐infrared, and mid‐infrared regions, with photoresponsivity up to 105 A W−1 at 590 nm. Furthermore, multiple synaptic neuromorphic functions, such as inhibitory postsynaptic current, paired‐pulse facilitation, short‐term depression, and long‐term depression, are successfully emulated. Here a new concept is provided for designing high‐performance optoelectronic synapses with polarization sensitivity and excellent potential in artificial intelligence is shown.

Controllable Multiple Depression in a Graphene Oxide Artificial Synapse

Graphene Dynamic Synapse with Modulatable Plasticity.

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing

High sensitivity and wide response range artificial synapse based on polyimide with embedded graphene quantum dots

Modulated Flexible Artificial Synaptic Transistor Based on Graphene and Ionic Gel

An artifical synapse based on graphene field-effect transistor with silver gel/polarized-aptamer gate

Graphene Synapses: Piezotronic Graphene Artificial Sensory Synapse (adv. Funct. Mater. 41/2019)

Graphene‐Based Synaptic Devices for Neuromorphic Applications

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors

Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS2 Heterostructure

Multi-Stimuli-Responsive Synapse Based on Vertical Van Der Waals Heterostructures.

Complementary Graphene-Ferroelectric Transistors (C-Gfts) As Synapses with Modulatable Plasticity for Supervised Learning

Flexible Artificial Synapse with Relearning Function Based on Ion Gel-Graphene FET

Graphene Synaptic Transistor Based on Ion-Gel Dielectric

Light-Activated Artificial Synapses Based on Graphene Hybrid Phototransistors

A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.

Multisensory Synapses Based on Fe3O4/graphene Transistors for Neuromorphic Computing

Flexible Artificial Memristive Synapse Constructed from Solution‐Processed MgO–Graphene Oxide Quantum Dot Hybrid Films

Bioinspired Mechano-Photonic Artificial Synapse Based on Graphene/mos2 Heterostructure

Multisensory Ferroelectric Semiconductor Synapse for Neuromorphic Computing