Saturation efficiency for detecting 1550 nm photons with a 2 × 2 array of Mo<sub>08</sub>Si<sub>02</sub> nanowires at 22 K
Feiyan Li,Hang Han,Qi Chen,Biao Zhang,Han Bao,Yue Dai,Rui Ge,Shuya Guo,Guanglong He,Yue Fei,Shuchao Yang,Xiaohan Wang,Hao Wang,Xiaoqing Jia,Qingyuan Zhao,Labao Zhang,Lin Kang,Peiheng Wu
DOI: https://doi.org/10.1364/prj.412697
IF: 7.6
2021-01-01
Photonics Research
Abstract:Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors (SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD (6.5 nm thickness and 50 nm width) based on the amorphous Mo 0.8 Si 0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 mK to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K, which overcomes the limitation of operation at low temperature ( < 1 K ) for traditional amorphous SNSPDs. Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.