Abstract:The brain‐inspired neuromorphic parallel computing has become one of the most promising technologies for efficient information processing by overcoming the von Neumann bottleneck of sequential operations. Synapses transmit information among neurons and act as the basic component in neuromorphic computing platforms. Despite the rapid advances in developing artificial synapses, most synaptic devices function electronically and thus numerous merits for photonics such as visual/imaging information processing, less corsstalk, and fast response, have to be compromised. Herein, a light‐stimulated synaptic device (photonic synapses) based on perovskite/In‐Ga‐Zn‐O heterojunction phototransistor is reported. The combination of high‐efficiency light absorber, high‐mobility channel, and heterojunction device architecture leads to efficient photon‐to‐electron conversion and intrinsic high‐gain mechanism for such light‐stimulated synapses. As a result, high performance photonic synapses are obtained with the basic functions of excitatory postsynaptic current (EPSC), paired‐pulse facilitation (PPF), and short‐term memory to long‐term memory conversion (STM‐LTM). Importantly, owing to the ultrasensitive photodetection characteristics, the light power consumption of such photonic artificial synapse can be as low as 2.6 picojoule. This study proposes a simple, efficient, and industry‐compatible device concept providing the photosensitive synapses for photonic neural networks by combining the merits of appropriate materials and device architecture. Ultrasensitive perovskite/Indium‐Gallium‐Zinc‐Oxide heterojunction phototransistors are designed and fabricated. The lowest detectable light power density can be as low as 0.52 nw cm‐2 and the basic functions of light‐stimulated artificial synapses have been realized. In particular, the light power consumption per synaptic event can be reduced to <2.6 picojoule.

Photonic implementation of the synaptic depression functions based on a vertical-cavity semiconductor optical amplifier

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

Optical Implementation of Neural Learning Algorithms Based on Cross-gain Modulation in a Semiconductor Optical Amplifier

Photonic Synapses with Ultra‐Low Energy Consumption Based on Vertical Organic Field‐Effect Transistors

Simulating the Spiking Response of VCSEL-based Optical Spiking Neuron

Artificial Neuron Based on Nonlinear Polarization Rotation in a Semiconductor Optical Amplifier

Self-Powered Optoelectronic Device with Depression-Related Synaptic Functions

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Perovskite/Organic Semiconductor-Based Photonic Synaptic Transistor for Artificial Visual System.

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Photonic Synapses with Ultralow Energy Consumption for Artificial Visual Perception and Brain Storage

Experimental demonstration of a photonic spiking neuron based on a DFB laser subject to side-mode optical pulse injection

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

Weak Light‐Stimulated Synaptic Transistors Based on MoS2/Organic Semiconductor Heterojunction for Neuromorphic Computing

SnS‐Facilitated ZnAlSnO‐Based Fully Optically Modulated Artificial Synaptic Device for Image Processing

Artificial optoelectronic synapse based on spatiotemporal irradiation to source‐sharing circuitry of synaptic phototransistors

Optically Stimulated Synaptic Devices Based on Silicon-Tin Alloyed Thin Film

Fully Light‐Modulated Organic Artificial Synapse with the Assistance of Ferroelectric Polarization

Ultralow Light‐Power Consuming Photonic Synapses Based on Ultrasensitive Perovskite/Indium‐Gallium‐Zinc‐Oxide Heterojunction Phototransistors

Self-powered Photonic Synapses with Rapid Optical Erasing Ability for Neuromorphic Visual Perception

All-optical Synaptic Neuron Based on Add-Drop Microring Resonator with Power-Tunable Auxiliary Light.