High-Q Silicon-Based Metasurface Perfect Absorber via Geometrical Perturbation Assisted Resonances

Xiaoshan Liu,Shimei Song,Xiangman Wu,Zhengqi Liu
DOI: https://doi.org/10.1109/lpt.2024.3371182
IF: 2.6
2024-03-13
IEEE Photonics Technology Letters
Abstract:A multi-band high- silicon-based metasurface light absorber is demonstrated via introducing geometrical perturbation for excitation of multipolar resonances. The displacement perturbation enables the ultra-sharp and near-unity absorption bands, leading to a 30-fold increase of the spectral factor and 12-fold enhancement of the absorptance in comparison to that of the un-perturbed silicon resonators. Moreover, owing to the overlapping of the electrical and magnetic dipoles, and the co-existence of electrical quadrupole modes, a new sharp absorption peak with the factor up to 539.1 is obtained, paving a new insight on achieving narrowband absorption. These findings suggest new methods for manipulation in spectral lineshape and also hold wide applications in optoelectronic modulators and devices.
engineering, electrical & electronic,optics,physics, applied
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