Abstract:Researchers are now focusing on inorganic halide-based cubic metal perovskites that are not toxic as they strive to commercialize optoelectronic products and solar cells derived from perovskites. This study explores the properties of new lead-free compounds, specifically GaGeX3 (where X = Cl, Br, and I), by executing first-principles Density Functional Theory (DFT) to analyze their optical, electronic, mechanical, and structural characteristics under pressure. Assessing the reliability of all compounds is done meticulously by applying the criteria of Born stability and calculating the formation energy. As discovered through elastic investigations, these materials showed anisotropic behavior, flexibility, and excellent elastic stability. The electronic band structures, calculated using both HSE06 and GGA-PBE functionals at 0 GPa, reveal fascinating behavior. However, computed band structures with non-zero pressures using GGA-PBE. Here, the conduction band moved to the lower energy when the halide Cl was changed with Br or I. In addition, the application of hydrostatic pressure can lead to tunable band gap properties in all compounds such as from 0.779 eV to 0 eV for GaGeCl3, from 0.462 eV to 0 eV for GaGeBr3 and from 0.330 eV to 0 eV for GaGeI3, resulting transformation from semiconductor to metallic. Understanding the origins of bandgap changes can be illuminated by examining the partial and total density of states (PDOS & TDOS). When subjected to pressure, all the studied compounds showed an impactful increase in absorption coefficients and displayed exceptional optical conductivity in both the visible and UV zones. Yet, GaGeCl3 is a more effective UV absorber because it absorbs light more strongly in the UV area. Moreover, GaGeI3 stands out among the compounds examined due to its impressive visible absorption and optical conductivity, which remain consistent under varying pressure conditions. Besides, GaGeI3 exhibits higher reflectivity when subjected to pressure making them suitable for UV shielding applications. At last, these metal cubic halide perovskites without lead present promising opportunities for advancing optoelectronic technologies. With their tunable properties and favorable optical characteristics, these materials are highly sought after for their potential in solar cells, multi-junctional solar cells, and different optoelectronic functions.

Tuning band gap and improving optoelectronic properties of lead-free halide perovskites FrMI 3 (M = Ge, Sn) under hydrostatic pressure

Exploring the influence of pressure-induced semiconductor-to-metal transition on the physical properties of cubic perovskites FrXCl3 (X = Ge and Sn)

High-Pressure Single-Crystal Structures of 3D Lead-Halide Hybrid Perovskites and Pressure Effects on their Electronic and Optical Properties

Pressure-induced structural, electronic, optical, and mechanical properties of lead-free GaGeX3 (X = Cl, Br and, I) perovskites: First-principles calculation

Investigation of high-pressure effect on the physical properties of FrNBr3 (N Ca, Sr) non-toxic halide perovskites

Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl3 perovskite under pressure

Tuning of band gap and enhancing electronic properties of CsSnBr3 under high pressure for optoelectronic applications

Hydrostatic pressure-induced transformations and multifunctional properties of Francium-based halide perovskite FrCaCl3: Insights from first-principles calculations

Impact of Applied Pressure on Tin‐Based Cubic Halide Perovskite ASnX3 (A = Li, Na and X = Cl, Br, and I) in Reference to Their Optoelectronic Applications

Pressure‐Induced Structural, Electronic, and Optical Properties of Lead‐Free NaGeX3 (X = F, Cl, Br, and I) Perovskites: First‐Principles Calculation

Pressure-Induced Phase Transition And Band Gap Engineering In Propylammonium Lead Bromide Perovskite

Ab-initio investigation of the structural, electronic and optical properties of CsPbBr 3 perovskite under pressure using the DFT-1/2 method

Indirect to direct band gap transition of ABI 3 (A = Rb, Cs; B = Ca, Sr) perovskites under hydrostatic pressure for photovoltaic and optoelectronic applications: A DFT study

Pressure induced band gap shifting from ultra-violet to visible region of RbSrCl3 perovskite

New Metallic Ordered Phase of Perovskite CsPbI3 under Pressure

Pressure-driven modification of optoelectronic features of ACaCl3 (A = Cs, Tl) for device applications

Pressure Effects on the Structures and Electronic Properties of Halide Perovskite CsPbX3 (X = I, Br, Cl)

An Overview of the Pressure- and Strain-Induced Changes in the Structural and Optoelectronic Properties of Organometal Halide Perovskites

Modulation of electronic and piezoelectric properties of lead-free halide perovskites LiSnX$_3$ (X = Cl, Br, and I) under applied pressure

Structural, elastic and optoelectronic properties of inorganic cubic FrBX3 (B = Ge, Sn; X = Cl, Br, I) perovskite: the density functional theory approach

Electronic structure transition of cubic CsSnCl3 under pressure: effect of rPBE and PBEsol functionals and GW method