Abstract:Graphene Nano Ribbons (GNRs) have been studied extensively due to their potential applications in electrical transport, optical devices etc.. Usually, the Tight Binding (TB) model is a common method to theoretically study the properties of GNRs. However, hopping parameters of two-dimensional graphene (2DG) are often used as the hopping parameters of the TB model of GNRs, which may lead to inaccuracies in the prediction of GNRs. In this work, we calculated the site-dependent hopping parameters from density functional theory and construction of Wannier orbitals for use in a realistic TB model. It has been found that due to the edge effect, hopping parameters of edge C atoms are markedly different from the bulk part, which is prominently observed in narrow GNRs. Compared to graphene, the change of hopping parameter of edge C atoms of zigzag GNRs (ZGNRs) and armchair GNRs (AGNRs) is as high as 0.11 and 0.08 eV, respectively. Moreover, we investigated the impact of the calculated site-dependent (SD) hopping parameters on the electronic transport properties of GNRs in the absence and presence of the perpendicular electric field and dilute charged impurities by Green function approach, Landauer-Büttiker formalism and self-consistent Born approximation. We find an electron-hole asymmetry in the electronic structure and transport properties of ZGNRs with SD hopping parameters. Also, AGNRs with SD hopping energies show a band gap regardless of their width, while AGNRs with 2DG hopping parameters exhibit metallic or semiconductor phases depending on their width. In addition, electric field-induced 4-ZGNR with SD hopping parameters undergoes a metallic to n-doped semiconducting phase transition whereas for 4-ZGNR with 2DG hopping parameters and 8-AGNRs with 2DG or SD hopping parameters, the application of electric field opens the band gap in both conduction and valence bands simultaneously. Our findings provide evidence for the electron-hole symmetry breaking in ZGNR with SD hopping parameters and make ZGNRs a suitable candidate in valleytronic devices.
What problem does this paper attempt to address?
This paper aims to solve the accuracy problem in predicting the electron - transport properties of graphene nanoribbons (GNRs). Specifically, the researchers noticed that when using the tight - binding (TB) model to study the properties of GNRs, the transition parameters of two - dimensional graphene (2D Graphene) are usually adopted as the transition parameters of GNRs, which may lead to inaccurate prediction results. Therefore, in this study, the TB model is improved to be more in line with reality by calculating the position - dependent transition parameters from density functional theory (DFT) and Wannier - orbital construction.
### Main research contents:
1. **Calculation of position - dependent transition parameters**:
- The researchers calculated the position - dependent transition parameters of GNRs with different widths and edge shapes. These parameters reflect the influence of edge effects, especially in narrower GNRs, where the transition parameters of edge carbon atoms are significantly different from those of the bulk part.
- For zigzag - edged GNRs (ZGNRs) and armchair - edged GNRs (AGNRs), the changes in the transition parameters of edge carbon atoms are 0.11 eV and 0.08 eV respectively.
2. **Study of electron - transport properties**:
- Using the Green's function approach, the Landauer - Büttiker formalism, and the self - consistent Born approximation, the influence of position - dependent transition parameters on the electron - transport properties of GNRs was studied.
- The study found that ZGNRs exhibit electron - hole asymmetry when using position - dependent transition parameters, while AGNRs show a bandgap regardless of their width.
3. **Influence of external fields and impurities**:
- The influence of a perpendicular electric field and sparse charged impurities on the electron - transport properties of GNRs was further studied. For example, 4 - ZGNR changes from metallic to n - type doped semiconductor after applying a perpendicular electric field.
### Main conclusions:
- **Electron - hole asymmetry**: ZGNRs exhibit obvious electron - hole asymmetry when using position - dependent transition parameters, which makes ZGNRs potential candidate materials for valleytronics devices.
- **Bandgap change**: When using position - dependent transition parameters, AGNRs show a bandgap regardless of their width, while when using the 2D graphene transition parameters, their bandgap changes with the width.
- **Electric - field - induced phase transition**: 4 - ZGNR changes from metallic to n - type doped semiconductor after applying a perpendicular electric field, while 8 - AGNR opens a bandgap in both the conduction band and the valence band after applying an electric field.
### Formula display:
- **Tight - binding Hamiltonian**:
\[
\hat{H}_0=\sum_i \epsilon_i \hat{f}_i^\dagger \hat{f}_i+\sum_{\langle i,j \rangle} t_{ij} \hat{f}_i^\dagger \hat{f}_j+\text{H.C.}
\]
where \(\epsilon_i\) is the onsite energy on the \(i\) - th lattice site, \(t_{ij}\) is the transition parameter between the nearest - neighbor atoms, and H.C. represents the Hermitian conjugate term.
- **Green's function**:
\[
J_C=(E + i\eta)I-\mathbf{a}-\Sigma_L-\Sigma_R
\]
where \(\Sigma_L\) and \(\Sigma_R\) are the left and right self - energy functions respectively, which describe the coupling between the central channel and the left and right electrodes.
- **Transmission coefficient**:
\[
T(E)=\text{Tr} \left[ \Gamma_L(E) G_C(E) \Gamma_R(E) G_C^\dagger(E) \right]
\]