Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Charlton J. Chen,Chad A. Husko,Inanc Meric,Ken L. Shepard,Chee Wei Wong,William M. J. Green,Yurii A. Vlasov,Solomon Assefa
DOI: https://doi.org/10.1063/1.3308492
IF: 4
2010-02-22
Applied Physics Letters
Abstract:We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.
physics, applied
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