Abstract:NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance. On one hand, in order to ensure data integrity, flash manufacturers often define the maximum P/E cycles of the worst block as the endurance of flash blocks. On the other hand, blocks exhibit large endurance variations, which introduce two serious problems. The first problem is that the error correcting code (ECC) is often over-provisioned, as it has to be designed to tolerate the worst case to ensure data integrity, which causes longer decoding latency. The second problem is the underutilized block's lifespan due to conservatively defined block endurance. Raw bit error rate (RBER) of most blocks have not arrived the allowable RBER based on the nominal endurance point, which implies that the conventional P/E cycle-based block retirement policies may waste large flash storage space. In this paper, to exploit the storage capacity of each flash block, we propose an RBER-aware lifetime prediction scheme based on machine learning technologies. We consider the problem that the model can lose prediction effectiveness over time and use incremental learning to update the model for adapting the changes at different lifetime stages. At run time, trained data will be gradually discarded, which can reduce memory overhead. For evaluating our purpose, four well-known machine learning techniques have been compared in terms of predictive accuracy and time overhead under our proposed lifetime prediction scheme. We also compared the predicted values with the tested values obtained in the real NAND flash-based test platform, and the experimental results show that the support vector machine (SVM) models based on our proposed lifetime prediction scheme can achieve as high as 95% accuracy for flash blocks. We also apply our proposed lifetime prediction scheme to predict the actual endurance of flash blocks at four different retention times, and the experimental results show that it can significantly improve the maximum P/E cycle of flash blocks from 37.5% to 86.3% on average. Therefore, the proposed lifetime prediction scheme can provide a guide for block endurance prediction.

Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip

Lifetime Improvement of 28 Nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm

Modeling and Simulation of an Improved Resistive Random Access Memory Array

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory.

An SVM-Based NAND Flash Endurance Prediction Method.

Analytic Model Of Endurance Degradation And Its Practical Applications For Operation Scheme Optimization In Metal Oxide Based Rram

Performance Prediction of Large-Scale 1S1R Resistive Memory Array Using Machine Learning

A NAND Flash Endurance Prediction Scheme with FPGA-based Memory Controller System

An RRAM Retention Prediction Framework Using a Convolutional Neural Network Based on Relaxation Behavior

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Statistical Analysis Of Retention Behavior And Lifetime Prediction Of Hfox-Based Rram

Prediction Models of Bit Errors for NAND Flash Memory Using 200 Days of Measured Data

ADLPT: Improving 3D NAND Flash Memory Reliability by Adaptive Lifetime Prediction Techniques

Realizing Extreme Endurance Through Fault-aware Wear Leveling and Improved Tolerance.

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities

The Impact of Endurance Degradation in Analog RRAM for In-Situ Training

Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory As Hot-data Storage.

On the Use of Dram with Unrepaired Weak Cells in Computing Systems

An Analytical Model for Performance and Lifetime Estimation of Hybrid DRAM-NVM Main Memories

High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory As Hot-Data Storage