Spin Photo Detector by using a CoFeB Magnetic Tunnel Junction

Tetsuya Shibata,Tomohito Mizuno,Takeshi Nojiri,Takekazu Yamane,Yusho Hirata,Weihao Zhang,Hideaki Fukuzawa,Yuichi Kasatani,Arata Tsukamoto
DOI: https://doi.org/10.1088/1361-6463/ad9284
2024-11-18
Journal of Physics D Applied Physics
Abstract:Ultra-fast photoelectric conversion devices are a crucial element in photonics applications and are the subject of intense research and development. In conventional high-speed photo detectors, photoelectric charge generation in semiconductors is rooted in a mechanism that directly outputs current. Owing to the dilemma of the amount of generated charge and high-speed output, it is being faced with fundamental difficult to achieve a higher response. Spin order, rather than charge generation, also exists as a phenomenon that enables ultrafast photoresponses, and magnetic tunnel junction (MTJ) are well-known high-speed electrical detection elements for magnetic states. In this study, we experimentally confirmed the magnetic switching of photoresponsive MTJ using a practical single CoFeB free layer with a high MR ratio of 80% by irradiation with laser light. Furthermore, we experimentally confirmed the operation of the reversible photo detector, and its rise time reached an ultrafast speed of 20 ps. We named it spin photo detector and it has huge potential applications that require ultrafast photo detection.
physics, applied
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