Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Pressure-stabilized binary compounds of magnesium and silicon

EXPERIMENTAL STUDY ON THE PHASE RELATIONS OF THE SYSTEM Mg2SiO4-MgAl2O4 AT HIGH PRESSURE AND HIGH TEMPERATURE

Periodic DFT Calculation of the Pressure-Induced Phase Transition and Thermodynamical Properties of Magnesium Silicide Polymorphs

Refined phase diagram and kagome-lattice superconductivity in Mg-Si system

A study of the phase transitions, electronic structures and optical properties of Mg2Si under high pressure

Prediction of the Rb-Si compounds under high pressure

Phase Transition, Structural and Thermodynamic Properties of Mg2si Polymorphs

Structural Evolution, Mechanical Properties, and Electronic Structure of Al–Mg–Si Compounds from First Principles

Silicon Framework-Based Lithium Silicides at High Pressures

First Principles Study of Structural, Electronic and Elastic Properties of Mg2 Si Polymorphs

Exploration of Potassium Silicide Compounds Under High Pressure

Crystal Structures of Silicon-Rich Lithium Silicides at High Pressure

Effects of Pressure on Structural, Mechanical, and Electronic Properties of Trigonal and Monoclinic MgSiO 3

Electronic structure of the high and low pressure polymorphs of MgSiN$_{2}$

Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures

Structural, electronic, elastic and thermal properties of Mg2Si

Novel magnesium borides and their superconductivity

A New Metastable Metallic Silicon Allotrope

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Effects of Pressure on Structural, Mechanical, and Electronic Properties and Stability of FexSiy Compounds

High-pressure Phases of MgSiN2 from First-Principles Calculations