Abstract:Photonic synapse transistors have attracted growing attention due to their salient advantages in information transmission/processing and good potentials for analog neural computing. Currently, most synapse transistors are rigid devices with the limitations in flexible and highly photosensitive semiconductor channel layers. To achieve high-performance flexible photonic synapse transistors, it is essential to develop stimuli-responsive organic semiconductor thin-films to broaden the photo-response range of devices and accelerate separation of photoinduced carriers for improving synaptic performances. Here, poly(3-hexylthiophene) (P3HT) and poly(indacenodithiophene-co-benzothiadiazole) (PIDT-BT) materials with complementary optical absorption have been used to fabricate a bulk composite film of organic semiconductor heterostructures by a solution-processing method. The surface structures and optoelectronic properties of the PIDT-BT:P3HT film and their single component films are studied. By using the PIDT-BT:P3HT heterostructure film as a novel photoactive channel layer, flexible low-voltage photonic synapse transistors have been designed and fabricated with the combination of polyelectrolyte-based dielectrics. The effects of different optical stimulation conditions on the performance of synapse transistors are investigated with insightful discussion on the semiconductor mechanisms. The flexible synapse transistors based on the PIDT-BT:P3HT film exhibit higher excitatory postsynaptic currents than devices with the single component semiconductor layers at the same optical stimulation. The synaptic response of the PIDT-BT:P3HT-based device is also evaluated under different stimulus variables including the optical spike wavelength, duration and frequency. As results, good synaptic characteristics are observed including the high excitatory postsynaptic current, paired-pulse facilitation, and frequency-dependent properties with the tunable synaptic plasticity. It is found that the response in excitatory postsynaptic current of the synaptic device stimulated by two beams (520 nm green laser and 685 nm red laser) together is greater than the sum of the responses stimulated by each beam alone. These results are useful for the design of high-performance photoresponsive semiconductor films and photonic synapse transistors, which are conducive to the development of low-power flexible optoelectronic devices, artificial synapses and beyond.

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