First-principles calculations on adsorption-diffusion behavior of Boron atom with tungsten surface

Chao Lu,Jian Yang,Xuanwei Lei,Jihua Huang,Zheng Ye,Shuhai Chen,Yue Zhao
DOI: https://doi.org/10.1016/j.commatsci.2020.109908
IF: 3.572
2020-10-01
Computational Materials Science
Abstract:<p>In this work, adsorption-diffusion behavior of Boron atom along and into W surface as well as the basic Boron atom absorption-diffusion behavior in W bulk were studied using first-principles density functional theory and climbing image nudged elastic band (CI-NEB) method. The result indicates that the octahedral interstice is the most stable position for B atom absorption and the energy barrier for B atom diffusing between two neighboring octahedral interstices in W bulk is 2.476 eV. For the adsorption behavior of Boron atom on W surface, Hollow site is the most stable adsorption position for W (1 0 0) surface and W (1 1 0) surface, while Hollow-II Site is the most stable adsorption position for W (1 1 1) surface. When B atom diffusing along W surface, the energy barrier for B atom diffusing along W (1 0 0) surface is the largest followed by W (1 1 0) surface and W (1 1 1) surface. During B atom diffusion into W surface, the needed energies for B atom diffusing into W (1 0 0) surface, W (1 1 0) surface and W (1 1 1) surface are 2.231 eV, 1.87 eV and 1.63 eV, respectively. After B atom diffuses to the 3rd, 3rd and 4th atomic layer below W (1 0 0) surface, W (1 1 0) surface and W (1 1 1) surface, the subsequent diffusion behavior shows the bulk diffusion characteristic. Beside, atomic diffusion coefficient D indicates that no matter diffusing along or into W surface, W (1 1 1) surface provides the best diffusion condition.</p>
materials science, multidisciplinary
What problem does this paper attempt to address?